27 resultados para atomic force microscopy
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The performance of the optimal linear feedback control and of the state-dependent Riccati equation control techniques applied to control and to suppress the chaotic motion in the atomic force microscope are analyzed. In addition, the sensitivity of each control technique regarding to parametric uncertainties are considered. Simulation results show the advantages and disadvantages of each technique. © 2013 Brazilian Society for Automatics - SBA.
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The tapping mode is one of the mostly employed techniques in atomic force microscopy due to its accurate imaging quality for a wide variety of surfaces. However, chaotic microcantilever motion impairs the obtention of accurate images from the sample surfaces. In order to investigate the problem the tapping mode atomic force microscope is modeled and chaotic motion is identified for a wide range of the parameter's values. Additionally, attempting to prevent the chaotic motion, two control techniques are implemented: the optimal linear feedback control and the time-delayed feedback control. The simulation results show the feasibility of the techniques for chaos control in the atomic force microscopy. © 2012 IMechE.
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During the last 30 years the Atomic Force Microscopy became the most powerful tool for surface probing in atomic scale. The Tapping-Mode Atomic Force Microscope is used to generate high quality accurate images of the samples surface. However, in this mode of operation the microcantilever frequently presents chaotic motion due to the nonlinear characteristics of the tip-sample forces interactions, degrading the image quality. This kind of irregular motion must be avoided by the control system. In this work, the tip-sample interaction is modelled considering the Lennard-Jones potentials and the two-term Galerkin aproximation. Additionally, the State Dependent Ricatti Equation and Time-Delayed Feedback Control techniques are used in order to force the Tapping-Mode Atomic Force Microscope system motion to a periodic orbit, preventing the microcantilever chaotic motion
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This paper discuss the qualitative use of electrostatic force microscopy to study the grain boundary active potential barrier present in dense SnO2-based polycrystalline semiconductors. The effect of heat treatment under rich- and poor-oxygen atmospheres was evaluated while especially considering the number of active barriers at grain boundary regions. The results show that the number of active barriers decrease after heat treatment in an oxygen-poor atmosphere and increase after heat treatment in oxygen-rich atmospheres. The observed effect was explained by considering the presence of oxidized transition metal elements segregated at grain boundary regions which leads to the p-type character of this region, in agreement with the atomic barrier formation mechanism in metal oxide varistor systems.
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The aim of the study was to verify the influence of surface sealants on the surface roughness of resin composite restorations before and after mechanical toothbrushing, and evaluate the superficial topography using atomic force microscope. Five surface sealers were used: Single Bond, Opti Bond Solo Plus, Fortify, Fortify Plus and control, without any sealer agent. The lowest values of surface roughness were obtained for control, Single Bond and Fortify groups before toothbrushing. Fortify and Fortify Plus were the sealer agents that support the abrasive action caused by the toothbrushing although Fortify Plus group remained with high values of surface roughness. The application of specific surface sealants could be a useful clinical procedure to maintain the quality of resin-based composite restorations. (C) 2010 Elsevier Ltd. All rights reserved.
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In the present work, electroactive grain boundaries of highly dense metal oxide SnO2-based polycrystalline varistors were determined by electrostatic force microscopy (EFM). The EFM technique was applied to identify electroactive grain boundaries and thus estimate the amount of active grain boundary, which, in the metal oxide SnO2-based varistor, was calculated at around 85%, i.e., much higher than that found in traditional metal oxide ZnO-based varistors. The mean potential barrier height value obtained from the EFM analysis was in complete agreement with the values calculated from the C-V measurements, together with a complex capacitance plane analysis that validates the methodology proposed here. (c) 2006 American Institute of Physics.
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The multiferroic behavior with ion modification using rare-earth cations on crystal structures, along with the insulating properties of BiFeO3 (BFO) thin films was investigated using piezoresponse force microscopy. Rare-earth-substituted BFO films with chemical compositions of (Bi 1.00-xRExFe1.00O3 (x=0; 0.15), RE=La and Nd were fabricated on Pt (111)/Ti/SiO2/Si substrates using a chemical solution deposition technique. A crystalline phase of tetragonal BFO was obtained by heat treatment in ambient atmosphere at 500 °C for 2 h. Ion modification using La3+ and Nd3+ cations lowered the leakage current density of the BFO films at room temperature from approximately 10-6 down to 10-8 A/cm2. The observed improved magnetism of the Nd3+ substituted BFO thin films can be related to the plate-like morphology in a nanometer scale. We observed that various types of domain behavior such as 71° and 180° domain switching, and pinned domain formation occurred. The maximum magnetoelectric coefficient in the longitudinal direction was close to 12 V/cm Oe. © 2012 Elsevier Ltd and Techna Group S.r.l.
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The degradation phenomena of ZnO and SnO2-based varistors were investigated for two different degradation methods: DC voltage at increased temperature and degradation with 8/20 μs pulsed currents (lightning type). Electrostatic force microscopy (EFM) was used to analyze the surface charge accumulated at grain-boundary regions before and after degradation. Before the degradation process, 85% of the barriers are active in the SnO2 system, while the ZnO system presents only 30% effective barriers. Both systems showed changes in the electrical behavior when degraded with pulses. In the case of the ZnO system, the behavior after pulse degradation was essentially ohmic due to the destruction of barriers (about 99% of the interfaces are conductive). After the degradation with 8/20 μs pulsed currents, the SnO2 system still presents nonohmic behavior with a significant decrease in the quantity of effective barriers (from 85% to 5%). However, when the degradation is accomplished with continuous current, the SnO2 system exhibits minimum variation, while the ZnO system degrades from 30% to 5%. This result indicates the existence of metastable defects of low concentration and/or low diffusion in the SnO2 system. High energy is necessary to degrade the barriers due to defect annihilation in the SnO2 system. © 2013 The American Ceramic Society.
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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The Frequency Modulated - Atomic Force Microscope (FM-AFM) is apowerful tool to perform surface investigation with true atomic resolution. The controlsystem of the FM-AFM must keep constant both the frequency and amplitude ofoscillation of the microcantilever during the scanning process of the sample. However,tip and sample interaction forces cause modulations in the microcantilever motion.A Phase-Locked Loop (PLL) is used as a demodulator and to generate feedback signalto the FM-AFM control system. The PLL performance is vital to the FM-AFMperformace since the image information is in the modulated microcantilever motion.Nevertheless, little attention is drawn to PLL performance in the FM-AFM literature.Here, the FM-AFM control system is simulated, comparing the performancefor di erent PLL designs.