A mass-transportation approach to a one dimensional fluid mechanics model with nonlocal velocity

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Theory of small aspect ratio waves in deep water

In the limit of small values of the aspect ratio parameter (or wave steepness) which measures the amplitude of a surface wave in units of its wave-length, a model equation is derived from the Euler system in infinite depth (deep water) without potential flow assumption. The resulting equation is shown to sustain periodic waves which on the one side tend to the proper linear limit at small amplitudes, on the other side possess a threshold amplitude where wave crest peaking is achieved. An explicit expression of the crest angle at wave breaking is found in terms of the wave velocity. By numerical simulations, stable soliton-like solutions (experiencing elastic interactions) propagate in a given velocities range on the edge of which they tend to the peakon solution. (c) 2005 Elsevier B.V. All rights reserved.

Propagator, tree-level unitarity and effective nonrelativistic potential for three-dimensional higher-derivative gravity augmented by a gravitational Chern-Simons term

An algorithm for computing the propagator for three-dimensional quadratic gravity with a gravitational Chern-Simons term, based on an extension of the three-dimensional Barnes-Rivers operators, is proposed. A systematic study of the tree-level unitarity of this theory is developed and its agreement with Newton's law is investigated by computing the effective nonrelativistic potential. (C) 2000 Elsevier B.V. B.V. All rights reserved.

The tachyon potential in the sliver frame

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Towards a UV completion of chameleons in string theory

Chameleons are scalar fields that couple directly to ordinary matter with gravitational strength, but which nevertheless evade the stringent constraints on tests of gravity because of properties they acquire in the presence of high ambient matter density. Chameleon theories were originally constructed in a bottom-up, phenomenological fashion, with potentials and matter couplings designed to hide the scalar from experiments. In this paper, we attempt to embed the chameleon scenario within string compactifications, thus UV completing the scenario. We look for stabilized potentials that can realize a screening mechanism, and we find that the volume modulus rather generically works as a chameleon, and in fact the supersymmetric potential used by Kachru, Kallosh, Linde and Trivedi (KKLT) is an example of this type. We consider all constraints from tests of gravity, allowing us to put experimental constraints on the KKLT parameters.

Bekenstein bound in asymptotically free field theory

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

QUARK MEAN-FIELD THEORY AND CONSISTENCY WITH NUCLEAR-MATTER

1/N(c) expansion in QCD (with N(c) the number of colors) suggests using a potential from meson sector (e.g., Richardson) for baryons. For light quarks a sigma-field has to be introduced to ensure chiral symmetry breaking (chi-SB). It is found that nuclear matter properties can be used to pin down the chi-SB modeling. All masses, M(N), m-sigma, m-omega, are found to scale with density. The equations are solved self-consistently.

THEORY OF ELECTRICAL CHARACTERISTICS OF A SCHOTTKY-BARRIER HAVING EXPONENTIALLY DISTRIBUTED IMPURITY STATES AND METAL-INSULATOR METAL STRUCTURES

The metal-insulator or metal-amorphous semiconductor blocking contact is still not well understood. Here, we discuss the steady state characteristics of a non-intimate metal-insulator Schottky barrier. We consider an exponential distribution (in energy) of impurity states in addition to impurity states at a single energy level within the depletion region. We present analytical expressions for the electrical potential, field, thickness of depletion region, capacitance, and charge accumulated in the depletion region. We also discuss ln I versus V(ap) data. Finally, we compare the characteristics in three cases: (i) impurity states at only a single energy level; (ii) uniform energy distribution of impurity states; and (iii) exponential energy distribution of impurity states.In general, the electrical characteristics of Schottky barriers and metal-insulator-metal structures with Schottky barriers depend strongly on the energy distribution of impurity states.

SEMICLASSICAL THEORY OF MAGNETIZATION FOR A 2-DIMENSIONAL NONINTERACTING ELECTRON-GAS

We compute the semiclassical magnetization and susceptibility of non-interacting electrons, confined by a smooth two-dimensional potential and subjected to a uniform perpendicular magnetic field, in the general case when their classical motion is chaotic. It is demonstrated that the magnetization per particle m(B) is directly related to the staircase function N(E), which counts the single-particle levels up to energy E. Using Gutzwiller's trace formula for N, we derive a semiclassical expression for m. Our results show that the magnetization has a non-zero average, which arises from quantum corrections to the leading-order Weyl approximation to the mean staircase and which is independent of whether the classical motion is chaotic or not. Fluctuations about the average are due to classical periodic orbits and do represent a signature of chaos. This behaviour is confirmed by numerical computations for a specific system.

Using an effective surface charge to explain surface potentials of Langmuir monolayers from dialkyldimethylammonium halides with the Gouy-Chapman theory

The use of an effective surface charge density has allowed the Gouy-Chapman (CC) theory to explain surface potential isotherms of Langmuir monolayers of dioctadecyldimethylammonium bromide (DODAB). The effective surface charge density of DODAB monolayer increases with the electronegativity of the counterions in the subphase. The pressure-area isotherms indicate a very condensed monolayer for DODAB spread on an I--containing subphase, which exhibits the lowest surface charge density, whereas the monolayer on a F-containing subphase is extremely expanded owing to the high surface charge density or electrostatic repulsion between headgroups. (C) 2001 Published by Elsevier B.V. B.V.

The BCS-Bose crossover theory

We contrast four distinct versions of the BCS-Bose statistical crossover theory according to the form assumed for the electron-number equation that accompanies the BCS gap equation. The four versions correspond to explicitly accounting for two-hole-(2h) as well as two-electron-(2e) Cooper pairs (CPs), or both in equal proportions, or only either kind. This follows from a recent generalization of the Bose-Einstein condensation (GBEC) statistical theory that includes not boson-boson interactions but rather 2e- and also (without loss of generality) 2h-CPs interacting with unpaired electrons and holes in a single-band model that is easily converted into a two-band model. The GBEC theory is essentially an extension of the Friedberg-Lee 1989 BEC theory of superconductors that excludes 2h-CPs. It can thus recover, when the numbers of 2h- and 2e-CPs in both BE-condensed and non-condensed states are separately equal, the BCS gap equation for all temperatures and couplings as well as the zero-temperature BCS (rigorous-upper-bound) condensation energy for all couplings. But ignoring either 2h- or 2e-CPs it can do neither. In particular, only half the BCS condensation energy is obtained in the two crossover versions ignoring either kind of CPs. We show how critical temperatures T-c from the original BCS-Bose crossover theory in 2D require unphysically large couplings for the Cooper/BCS model interaction to differ significantly from the T(c)s of ordinary BCS theory (where the number equation is substituted by the assumption that the chemical potential equals the Fermi energy). (c) 2007 Published by Elsevier B.V.

Theory of electrical characteristics for metal-oxide-insulator Schottky barrier and metal-insulator-metal structures

The metal-insulator or metal-amorphous semiconductor blocking contact is still not well understood. Here, the intimate metal-insulator and metal-oxide-insulator contact are discussed. Further, the steady-state characteristics of metal-oxide-insulator-metal structures are also discussed. Oxide is an insulator with wider energy band gap (about 50 Å thick). A uniform energetic distribution of impurities is considered in addition to impurities at a single energy level inside the surface charge region at the oxide-insulator interface. Analytical expressions are presented for electrical potential, field, thickness of the depletion region, capacitance, and charge accumulated in the surface charge region. The electrical characteristics are compared with reference to relative densities of two types of impurities. ln I is proportional to the square root of applied potential if energetically distributed impurities are relatively important. However, distribution of the electrical potential is quite complicated. In general energetically distributed impurities can considerably change the electrical characteristics of these structures.

Theory of non-steady state electrical characteristics of metal-insulator-metal structures with schottky barriers and exponentially distributed impurity states

We discuss non-steady state electrical characteristics of a metal-insulator-metal structure. We consider an exponential distribution (in energy) of impurity states in addition to impurity states at a single energy level within the depletion region. We discuss thermal as well as isothermal characteristics and present an expression for the temperature of maximum current (Tm) and a method to calculate the density of exponentially distributed impurity states. We plot the theoretical curves for various sets of parameters and the variation of Tm, and Im (maximum current) with applied potential for various impurity distributions. The present model can explain the available experimental results. Finally we compare the non-steady state characteristics in three cases: (i) impurity states only at a single energy level, (ii) uniform energetic distribution of impurity states, and (iii) exponential energetic distribution of impurity states.

A generalized theory of electrical characteristics of schottky barriers for amorphous materials

In the present paper, we discuss a generalized theory of electrical characteristics for amorphous semiconductor (or insulator) Schottky barriers, considering: (i) surface states, (ii) doping impurity states at a single energy level and (iii) energetically distributed bulk impurity states. We also consider a thin oxide layer (≈10 Å) between metal and semiconductor. We develop current versus applied potential characteristics considering the variation of the Fermi level very close to contact inside the semiconductor and decrease in barrier height due to the image force effect as well as potential fall on the oxide layer. Finally, we discuss the importance of each parameter, i.e. surface states, distributed impurity states, doping impurity states, thickness of oxide layer etc. on the log I versus applied potential characteristics. The present theory is also applicable for intimate contact, i.e. metal-semiconductor contact, crystalline material structures or for Schottky barriers in insulators or polymers.

Coherent atomic oscillations and resonances between coupled Bose-Einstein condensates with time-dependent trapping potential

The atomic tunneling between two tunnel-coupled Bose-Einstein condensates (BECs) in a double-well time-dependent trap was studied. For the slowly varying trap, synchronization of oscillations of the trap with oscillations of the relative population was predicted. Using the Melnikov approach, the appearance of the chaotic oscillations in the tunneling phenomena between the condensates was confirmed.