50 resultados para International Brotherhood of Electrical Workers
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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The metal-insulator or metal-amorphous semiconductor blocking contact is still not well understood. Here, we discuss the steady state characteristics of a non-intimate metal-insulator Schottky barrier. We consider an exponential distribution (in energy) of impurity states in addition to impurity states at a single energy level within the depletion region. We present analytical expressions for the electrical potential, field, thickness of depletion region, capacitance, and charge accumulated in the depletion region. We also discuss ln I versus V(ap) data. Finally, we compare the characteristics in three cases: (i) impurity states at only a single energy level; (ii) uniform energy distribution of impurity states; and (iii) exponential energy distribution of impurity states.In general, the electrical characteristics of Schottky barriers and metal-insulator-metal structures with Schottky barriers depend strongly on the energy distribution of impurity states.
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Superconductor films of the BSCCO system have been grown by dip coating technique with good success. The chemical method allows us to grow high temperature superconductor thin films to get better control of stoichiometry, large areas and is cheaper than other methods. There is a great technological interest in growth oriented superconductor films due anisotropic characteristics of superconductor materials of high critical temperature, specifically the cuprates, as we know that the orientation may increase the electrical transport properties. Based on this, the polymeric precursor method has been used to obtain thin films of the BSCCO system. In this work we have applied that method together with the deposition technique known as dip coating to obtain Bi-based superconductor thin films, specifically, Bi1.6Pb0.4Sr2.0C2.0Cu3.0Ox+8, also known as 2223 phase with a critical temperature around 110 K. The films with multilayers have been grown on crystalline substrates of LaAlO3 and orientated (100) after being heat treated around 790 degrees C - 820 degrees C in lapse time of 1 hour in a controlled atmosphere. XRD measurements have shown the presence of a crystalline phase 2212 with a critical temperature around 85 K with (001) orientation, as well as a small fraction of 2223 phase. SEM has shown a low uniformity and some cracks that maybe related to the applied heat treatment. WDS has also been used to study the films composition. Different heat treatments have been used with the aim to increase the percentage of 2223 phase. Measurements of resistivity confirmed the presence of at least two crystalline phases, 2212 and 2223, with T-c around 85 K and 110 K, respectively.
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Adolescents usually exhibit late sleep phase and irregular sleep patterns. As a result, they do not get enough sleep and report daytime sleepiness. This condition could be aggravated in working students who have a more limited time for sleep. In this survey, we investigated the impact of evening classes and employment on the sleep patterns of adolescents. We compared female (n = 17) and male (n = 14) non-worker students to female (n = 28) and male (n = 20) worker students who attended the same high school. The volunteers (aged 17.4 years +/- 11 months) answered a sleep log during a 16-day period. Worker students slept and woke up earlier, had a shorter nocturnal sleep length and a shorter daily (nocturnal plus diurnal) sleep length compared to non-working pupils. The four groups of students delayed sleep onset time on weekends, but only worker students delayed wake-up time on Sundays. The wake-up time was similar among groups on Sundays. While student workers tended to increase the sleep length in the weekends, non-working students increased it on Mondays and/or Tuesdays. The results showed that sleep schedules and sleep length were different according to the work status. Going to bed later on Saturday by the four groups of students suggests the influence of social activities, while a later wake-up time on Sundays could result from a shorter sleep length on workdays.
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Electrical conductivity and thermoelectric power measurements carried out in a heamatite ceramic showed a strong anisotropy in directions normal and parallel to the uniaxial pressing direction. This behaviour is similar to that verified in alpha-Fe2O3 single crystal. The results suggest that the extended structural defects, generated during sintering, disturb the magnetic order on the (001) planes of alpha-Fe2O3 and limit the mobility of n type carriers.
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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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The metal-insulator or metal-amorphous semiconductor blocking contact is still not well understood. Here, the intimate metal-insulator and metal-oxide-insulator contact are discussed. Further, the steady-state characteristics of metal-oxide-insulator-metal structures are also discussed. Oxide is an insulator with wider energy band gap (about 50 Å thick). A uniform energetic distribution of impurities is considered in addition to impurities at a single energy level inside the surface charge region at the oxide-insulator interface. Analytical expressions are presented for electrical potential, field, thickness of the depletion region, capacitance, and charge accumulated in the surface charge region. The electrical characteristics are compared with reference to relative densities of two types of impurities. ln I is proportional to the square root of applied potential if energetically distributed impurities are relatively important. However, distribution of the electrical potential is quite complicated. In general energetically distributed impurities can considerably change the electrical characteristics of these structures.
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In the present paper, we discuss a generalized theory of electrical characteristics for amorphous semiconductor (or insulator) Schottky barriers, considering: (i) surface states, (ii) doping impurity states at a single energy level and (iii) energetically distributed bulk impurity states. We also consider a thin oxide layer (≈10 Å) between metal and semiconductor. We develop current versus applied potential characteristics considering the variation of the Fermi level very close to contact inside the semiconductor and decrease in barrier height due to the image force effect as well as potential fall on the oxide layer. Finally, we discuss the importance of each parameter, i.e. surface states, distributed impurity states, doping impurity states, thickness of oxide layer etc. on the log I versus applied potential characteristics. The present theory is also applicable for intimate contact, i.e. metal-semiconductor contact, crystalline material structures or for Schottky barriers in insulators or polymers.
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Seeds from six soybean cultivars (Cristalina, IAC 31-Foscarin, IAC-15, UFV-10, IAC-14 and IAS-5) and from five soybean cultivars (IAC 31-Foscarin, IAC-15, IAC-14, IAS-5 and Iguacu) were evaluated in 1993 and 1994, respectively, in terms of physiological seed quality by the mechanical damage (MD), standard germination (SG), accelerated aging (AA), electrical conductivity (EC), and seedling field emergence (FE) tests. Significant correlations were detected between SG, AA and EC and FE. However, in terms of the cultivar or the year, the degree of association among these parameters can change based on the environmental conditions of each year.
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This work presents a methodology to analyze transient stability for electric energy systems using artificial neural networks based on fuzzy ARTMAP architecture. This architecture seeks exploring similarity with computational concepts on fuzzy set theory and ART (Adaptive Resonance Theory) neural network. The ART architectures show plasticity and stability characteristics, which are essential qualities to provide the training and to execute the analysis. Therefore, it is used a very fast training, when compared to the conventional backpropagation algorithm formulation. Consequently, the analysis becomes more competitive, compared to the principal methods found in the specialized literature. Results considering a system composed of 45 buses, 72 transmission lines and 10 synchronous machines are presented. © 2003 IEEE.
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The problem of power system stability including the effects of a flexible alternating current transmission system (FACTS) is approached. First, the controlled series compensation is considered in the machine against infinite bar system and its effects are taken into account by means of construction of a Lyapunov function (LF). This simple system is helpful in order to understand the form the device affects dynamic and transient performance of the power system. After, the multimachine case is considered and it is shown that the single-machine results apply to multimachine systems. An energy-form Lyapunov function is derived for the power system including the FACTS device and it is used to analyse damping and synchronizing effects due to the FACTS device in single-machine as well as in multimachine power systems. © 2005 Elsevier Ltd. All rights reserved.
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The use of sensorless technologies is an increasing tendency on industrial drivers for electrical machines. The estimation of electrical and mechanical parameters involved with the electrical machine control is used very frequently in order to avoid measurement of all variables related to this process. The cost reduction may also be considered in industrial drivers, besides the increasing robustness of the system, as an advantage of the use of sensorless technologies. This work proposes the use of a recurrent artificial neural network to estimate the speed of induction motor for sensorless control schemes using one single current sensor. Simulation and experimental results are presented to validate the proposed approach. ©2008 IEEE.