208 resultados para Graphical interface
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Pós-graduação em Engenharia Elétrica - FEB
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One problem that has been happening frequently in port terminals is the poor planning of the loading and unloading of containers. The reason of this problem is the lack of an efficient method that provides the best means of these operations. The main goal of this work is, to implement a method that provides the best ways to perform the loading and unloading of containers, at each port and thus bring a great saving for these terminals, since the number of moves is directly proportional to cost. To carry out this program was used the idea that the containers are placed in vertical stacks, where the access can be done only by the top of the stack, so the ship was treated as an matrix and to fill it, two rules were created for loading and two for unloading. To obtain the best sequence of rules was used Beam Search method, which is an enumeration type implicit method that analyzes only the best solution of the tree generated. Thus, the program developed in the Java language, provides the best way to perform the loading and unloading ports and the way as the ship leaves each port using a graphical interface
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In the universities, before the start of each school year, is held the distribution of classes among available teachers. Therefore, it is necessary to consider the maximum workweek for each teacher and their preferences for each discipline, to prevent a teacher to give lessons in two separate locations at the same time and to avoid some teachers to become overloaded while others with large clearance. This process, manually performed, is time consuming and does not allow the visualization of other combinations of assignment of teachers to classes, besides being liable to error. This work aims to develop a decision support tool for the problem of assigning teachers to classes in college. The project encompasses the development of a computer program using the concepts of object orientation and a tree search algorithm of a combinatorial nature called Beam Search. The programming language used is Java and the program has a graphical interface for entering and manipulating data of the problem. Once obtained the schedule data of classes and teachers is possible, by means of the tool, perform various simulations and manual adjustments to achieve the final result. It is an efficient method of class scheduling, considering the speed of task execution and the fact that it generates only feasible results
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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
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A routine was developed in C++ for the processing of social and environmental census data acquired by the Brazilian Institute of Geography and Statistics (IBGE). The routine employs a simple graphical environment. The data generated are presented in a tabular format, which facilitates a broad and objective view of the values, and provides a convenient means of querying the database. The source code used to develop the routine permits updates and changes, as required by the user. Statistical and mathematical analysis enables the generation of social and environmental indicators, together with quantitative and qualitative classification of the socio-environmental quality of the region analyzed. As an example, the routine was applied using census data for the city of Sorocaba (São Paulo State, Brazil), including conditions of household occupation, water supply, sanitation, level of education, income, and other factors. It is envisaged that the proposed analytical model will assist professionals from different fields of research and teaching to develop urban planning and management strategies.
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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The electrical characterization of a high efficient multilayer polymer light emitting diode using poly[(2-methoxy-5-hexyloxy)-p-phenylenevinylene] as the emissive layer and an anionic fluorinated surfactant as the electron transport layer was performed. For the sake of comparison, a conventional single layer device was fabricated. The density current vs. voltage measurements revealed that the conventional device has a higher threshold voltage and lower current compared to the surfactant modified device. The effective barrier height for electron injection was suppressed. The influence of the interfaces and bulk contributions to the dc and high frequencies conductivities of the devices was also discussed. (c) 2006 Springer Science + Business Media, Inc.
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An investigation is made of the influence from small amounts of the protein bovine serum albumin (BSA) on the lateral organization of low molecular weight surfactant sodium bis-2-ethylhexyl sulfosuccinate (AOT) at the air-water interface. Surface pressure (pi - A), surface potential (DeltaV - A) and Brewster angle microscopy (BAM) experiments were carried out, with particular emphasis on the monolayer stability under successive compression-expansion cycles. AOT monolayer is not stable at the air-water interface, which means that the majority of AOT molecules go into the aqueous subphase as monomers and/or normal micelles. When a waiting time elapses between spreading and compression, the surfactant monolayer tends to reorganize partially at the air-water interface, with a monolayer expansion being observed for waiting times as large as 12 h. The incorporation of very small amount of BSA (10(-9) M) at the interface, also inferred from BAM, increases the monolayer stability as revealed by pi - A and DeltaV - A results. For a waiting time of circa 3 h, the mixed monolayer reaches its maximum stability. This must be related to protein (and/or protein-surfactant complexes) adsorbed onto the AOT monolayer, thus altering the BSA conformation to accommodate its hydrophobic/hydrophilic residues. Furthermore, the effects from such small amounts of BSA in the monolayer formation and stabilization mean that the AOT monolayer responds cooperatively to BSA. (C) 2004 Elsevier B.V. All rights reserved.
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A simple model is developed for the admittance of a metal-insulator-semiconductor (MIS) capacitor which includes the effect of a guard ring surrounding the Ohmic contact to the semiconductor. The model predicts most of the features observed in a MIS capacitor fabricated using regioregular poly(3-hexylthiophene) as the active semiconductor and polysilsesquioxane as the gate insulator. In particular, it shows that when the capacitor is driven into accumulation, the parasitic transistor formed by the guard ring and Ohmic contact can give rise to an additional feature in the admittance-voltage plot that could be mistaken for interface states. When this artifact and underlying losses in the bulk semiconductor are accounted for, the remaining experimental feature, a peak in the loss-voltage plot when the capacitor is in depletion, is identified as an interface (or near interface) state of density of similar to 4 x 10(10) cm(-2) eV(-1). Application of the model shows that exposure of a vacuum-annealed device to laboratory air produces a rapid change in the doping density in the channel region of the parasitic transistor but only slow changes in the bulk semiconductor covered by the gold Ohmic contact. (C) 2008 American Institute of Physics.
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Web service-based application is an architectural style, where a collection of Web services communicate to each other to execute processes. With the popularity increase of Web service-based applications and since messages exchanged inside of this applications can be complex, we need tools to simplify the understanding of interrelationship among Web services. This work present a description of a graphical representation of Web service-based applications and the mechanisms inserted among Web service requesters and providers to catch information to represent an application. The major contribution of this paper is to discus and use HTTP and SOAP information to show a graphical representation similar to a UML sequence diagram of Web service-based applications.
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Injection-limited operation is identified in thin-film, alpha-NPD-based diodes. A detailed model for the impedance of the injection process is provided which considers the kinetics of filling/releasing of interface states as the key factor behind the injection mechanism. The injection model is able to simultaneously account for the steady-state, current-voltage (J-V) characteristics and impedance response. and is based on the sequential injection of holes mediated by energetically distributed surface states at the metal-organic interface. The model takes into account the vacuum level offset caused by the interface dipole, along with the partial shift of the interface level distribution with bias voltage. This approach connects the low-frequency (similar to 1 Hz) capacitance spectra, which exhibits a transition between positive to negative values, to the change in the occupancy of interface states with voltage. Simulations based on the model allow to derive the density of interface states effectively intervening in the carrier injection (similar to 5 x 10(12) cm(-2)), which exhibit a Gaussian-like distribution. A kinetically determined hole barrier is calculated at levels located similar to 0.4 eV below the contact work function. (C) 2008 Elsevier B.V. All rights reserved.
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Capacitance spectra of thin (< 200 nm) Alq(3) electron-only devices have been measured as a function of bias voltage. Capacitance spectra exhibit a flat response at high frequencies (> 10(3) Hz) and no feature related to the carrier transit time is observed. Toward low frequencies the spectra reach a maximum and develop a negative excess capacitance. Capacitance response along with current-voltage (J-V) characteristics are interpreted in terms of the injection of electrons mediated by surface states at the metal organic interface. A detailed model for the impedance of the injection process is provided that highlights the role of the filling/releasing kinetics of energetically distributed interface states. This approach connects the whole capacitance spectra to the occupancy of interface states, with no additional information about bulk trap levels. Simulations based on the model allow to derive the density of interface states effectively intervening in the carrier injection (similar to 1.5 x 10(12) cm (2)). (C) 2008 Elsevier B.V. All rights reserved.
Nanohardness of a Ti thin film and its interface deposited by an electron beam on a 304 SS substrate
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The results of nanohardness measurements at a film surface and film-substrate interface are presented and discussed. An electron beam device was used to deposit a Ti film on a 304 stainless steel (304 SS) substrate. The diluted interface was obtained by thermal activated atomic diffusion. The. Ti film and Ti film-304 SS interface were analyzed by energy dispersive spectrometry and were observed using atomic force microscopy. The nanohardness of the Ti film-304 SS system was measured by a nanoindentation technique. The results showed the Ti film-304 SS interface had a higher hardness value than the Ti film and 304 SS substrate. The Ti film surface had a lower hardness due to the presence of a TiO2 thin layer.
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)