Nitrous oxide production and potential denitrification in soils from riparian buffer strips: Influence of earthworms and plant litter

Vegetated riparian buffer strips have been established in Southern Quebec (Canada) in order to intercept nutrients such as nitrate (NO(3)(-)) and protect water quality near agricultural fields. Buffer strips may also favour denitrification through a combination of high soil moisture, NO(3)(-) and carbon supply, which could lead to the production of nitrous oxide (N(2)O), a greenhouse gas. Denitrification could be further amplified by the presence of earthworms, or by plant species that promote earthworm and bacterial activity in soils. Soils from four farms, comprising maize fields and adjacent buffer strips, were sampled in the fall of 2008. A total of six earthworm species were found, but average earthworm biomass did not differ between buffer strips and maize agroecoecosystems. Nitrate concentrations and net nitrification rates were higher in the maize fields than in the buffer strips: there was no difference in N(2)O production in soils collected from the two sampling locations. Potential denitrification, measured by acetylene inhibition, varied by two orders of magnitude, depending on experimental conditions: when amended with H(2)O or with H(2)O + NO3-, potential denitrification was higher (P < 0.05) in soils from buffer strips than from maize fields. Potential denitrification was highest in soils amended with H(2)O+glucose, or with H(2)O+ NO(3)(-) + glucose. Using microcosms, we tested the effect of litter-soil mixtures on earthworm growth, and the effect of earthworm-litter-soil mixtures on potential denitrification. Based on four categories of chemical assays, litters of woody species (oak, apple, Rhododendron) were generally of lower nutritional quality than litter from agronomic species (alfalfa, switchgrass, corn stover). Alfalfa litter had the most positive effect, whereas apple litter had the most negative effect, on earthworm growth. Potential denitrification was 2-4 times higher in earthworm-litter-soil mixtures than in plain soil. Litter treatments that included corn stover had lower potential denitrification than those that included alfalfa or switchgrass, whereas litter treatments that included oak had lower potential denitrification than those that included apple or Rhododendron. Results suggest that potential N(2)O emissions may be higher in riparian buffer strips than in adjacent maize fields, that N(2)O emissions in buffer strips may be amplified by comminuting earthworms, and that plant litters that reduce earthworm growth may not be best at mitigating N(2)O emissions. (c) 2010 Elsevier B.V. All rights reserved.

Relaxation effects on the negatively charged Mg impurity in zincblende GaN

The electronic structure of Mg impurity in zincblende (c-)GaN is investigated by using the ab initio full potential linear-augmented plane-wave method and the local density-functional approximation. Full geometry optimization calculations, including nearest and next-nearest neighbor displacements, are performed for the impurity in the neutral and negatively charged states. A value of 190 ± 10 meV was obtained for the Franck-Condon shift to the thermal energy, which is in good agreement with that observed in recent low temperature photoluminescence and Hall-effect measurements. We conclude that the nearest and next-nearest neighbors of the Mg impurity replacing Ga in C-GaN undergo outward relaxations which play an important role in the determination of the center acceptor energies.

Nanocrystalline GaN and GaN:H films grown by RF-magnetron sputtering

The structural and optical properties of nanocrystalline GaN and GaN:H films grown by RF-tnagnetron sputtering are focused here. The films were grown using a Ga target and a variety of deposition parameters (N 2/H 2/Arflow rates, RF power, and substrate temperatures). Si (100) and fused silica substrates were used at relatively low temperatures (T s ≤ 420K). The main effects resulting from the deposition parameters variations on the films properties were related to the presence of hydrogen in the plasma. The X-ray diffraction analysis indicates that the grain sizes (∼15nm) and the crystallized volume fraction significantly decrease when hydrogen is present in the plasma. The optical absorption experiments indicate that the hydrogenated films have absorption edges very similar to that of GaN single crystal films reported in the literature, while the non-hydrogenated samples present larger absorption tails encroaching into the gap energies.

On the electrochemical behavior of Cu-16%Zn-6.5%Al alloy containing the β'-phase (martensite) in borate buffer

In this work, the electrochemical behavior of Cu-16(wt.%)Zn-6.5(wt.%)Al alloy containing the β'-phase (martensite) was studied in borate buffer solution (pH 8.4) by means of open-circuit potential (EOC), electrochemical impedance spectroscopy (EIS) and cyclic voltammetry (CV). The alloy EOC was -0.29 V vs. Hg/HgO/OH-, similar to that of pure copper in this medium, indicating that the processes which occur on the alloy surface are mainly governed by copper. EIS response was related to the dielectric and transmission properties of the complex oxide layer. The CVs showed peaks concerning the redox reactions for copper and zinc. These peaks were assigned to the formation and reduction of copper and zinc species. Furthermore, they showed that the copper oxidation was suppressed by the presence of zinc and aluminum in the alloy composition. The copper and zinc oxidation to form complex oxide layers and the reduction of the different metallic oxides generated in the anodic potential scan suggest that a solid state reaction could determine the metallic oxide formation. © 2013 Elsevier Ltd. All rights reserved.

Ferroelectric and structural instability of (Pb,Ca)TiO3 thin films prepared in an oxygen atmosphere and deposited on LSCO thin films which act as a buffer layer

Structural, microstructural and ferroelectric properties of Pb0.90Ca0.10TiO3 (PCT10) thin films deposited using La0.50Sr0.50CoO3 (LSCO) thin films which serve only as a buffer layer were compared with properties of the thin films grown using a platinum-coated silicon substrate. LSCO and PCT10 thin films were grown using the chemical solution deposition method and heat-treated in an oxygen atmosphere at 700 °C and 650 °C in a tube oven, respectively. X-ray diffraction (XRD) and Raman spectroscopy results showed that PCT10 thin films deposited directly on a platinum-coated silicon substrate exhibit a strong tetragonal character while thin films with the LSCO buffer layer displayed a smaller tetragonal character. Surface morphology observations by atomic force microscopy (AFM) revealed that PCT10 thin films with a LSCO buffer layer had a smoother surface and smaller grain size compared with thin films grown on a platinum-coated silicon substrate. Additionally, the capacitance versus voltage curves and hysteresis loop measurement indicated that the degree of polarization decreased for PCT10 thin films on a LSCO buffer layer compared with PCT10 thin films deposited directly on a platinum-coated silicon substrate. This phenomenon can be described as the smaller shift off-center of Ti atoms along the c-direction 〈001〉 inside the TiO6 octahedron unit due to the reduction of lattice parameters. Remnant polarization (P r ) values are about 30 μC/cm2 and 12 μC/cm2 for PCT10/Pt and PCT10/LSCO thin films, respectively. Results showed that the LSCO buffer layer strongly influenced the structural, microstructural and ferroelectric properties of PCT10 thin films. © 2013 Elsevier Ltd and Techna Group S.r.l.

Preparação de filmes policristalinos de GaN pela técnica de sputtering reativo a baixas temperaturas de substrato

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Influência da temperatura e do tipo de substrato em filmes de GaN depositados por magnetron sputtering reativo

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Efeito de vacâncias de nitrogênio, gálio e outros parâmetros da célula unitária nas propriedades eletrônicas do GaN

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Estudo teórico das propriedades estruturais e eletrônicas do GaN e do semicondutor magnético Ga1-xMnxN no bulk e na superfície

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Effects of substrate temperature, substrate orientation, and energetic atomic collisions on the structure of GaN films grown by reactive sputtering

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Functional Mn-Mg-k cation complexes in GaN featured by Raman spectroscopy

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Estudo das propriedades ópticas e vibracionais de filmes de GaN dopados com Mn elaborados por RF Magnetron Sputtering Reativo

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Análise da deposição de filmes finos semicondutores de GaN e GaN e Ga1-xMnxN preparados por sputtering reativo

Thin films of Ga1-xMnxN have great interest in its potential for control of electron spin (spintronics), in most cases this material is synthesized by techniques that have a high degree of control the deposition parameters, such as molecular beam epitaxy (MBE) and deposition of metalorganic chemical vapor deposition (MOCVD). The sputtering technique is an alternative route to produce such materials. Here we study the film deposition Ga1-xMnxN by reactive sputtering technique and apply enhancements such as a glove box, a residual gas analyzer and temperature control system, in order to growth films epitaxially using an analysis of the preconditions of films analyzed by spectroscopic techniques and microscopic. These procedures helped to improve the technique of deposition by cleaning substrates in an inert environment, and by the analysis of trace gases and heating the substrate holder as explained in the literature. Through the applications and comparisons it can be pointed out that the technique has the advantage of its simplicity and relatively low cost compared to MBE and MOCVD, but produces polycrystalline material

Anurans from the Serra da Bocaina National Park and surrounding buffer area, southeastern Brazil

Here, we review the species of anuran amphibian from the Serra da Bocaina National Park and its buffer area, in the Atlantic Forest of southeastern Brazil, comparing the data from a recent survey with museum records. We surveyed adult and larval anurans in ponds, marshes, and streams discontinuously from May 2008 to January 2011. In total, 63 anuran species were previously known to occur at the Park and its surrounding buffer area. In our survey, we recorded 46 species, of which five represented new records, and 22 appeared only in the historical list. Seven topotypic populations were not found in the present study. We suggest that conservation strategies for anurans in the Serra da Bocaina should also consider the surrounding areas that are subjected to anthropogenic pressure, due to the high diversity recorded, high altitudinal variation in species distribution, and various vegetation formations.

First-principles simulation of elastic constants and electronic properties of GaN

The electronic and structural properties and elastic constants of the wurtzite phase of GaN, was investigated by computer simulation at Density Functional Theory level, with B3LYP and B3PW hybrid functional. The electronic properties were investigated through the analysis of the band structures and density of states, and the mechanical properties were studied through the calculus of the elastic constants: C11, C33, C44, C12, and C13. The results show that the maximum of the valence band and the minimum of the conduction band are both located at the Γ point, indicating that GaN is a direct band gap semiconductor. The following constants were obtained for B3LYP and B3PW (in brackets): C11 = 366.9 [372.4], C33 = 390.9 [393.4], C44 = 99.1 [96.9], C12 = 143.6 [155.2], and C13 = 107.6 [121.4].