260 resultados para Structural and electrical properties
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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This work describes the synthesis of highly conducting antimony-doped tin oxide (ATO) nanocrystals prepared via a nonaqueous sol–gel route in the size range of 4–6 nm and provides insights into its electrical properties. The antimony composition was varied from 1 to 18 mol% and the lowest resistivity (4.0 × 10−4Ω·cm) was observed at room temperature in the SnO2:8.8 mol% Sb composition. The samples were evaluated by X-ray diffraction, high-resolution transmission electron microscopy, energy-dispersive X-ray spectroscopy, and scanning electron microscope, and resistivity measurements were taken in the four-probe mode in the temperature range of 13–300 K. The results show highly crystalline nanoparticles in a monodisperse colloidal system, dependence on the shape of ATO nanoparticles as a function of Sb distribution, low resistivity, and semiconductor–metal transition.
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
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SnO2-based varistors are strong candidates to replace the ZnO-based varistors due to ordering fewer additives to improve its electrical behavior as well as by showing similar nonlinear characteristics of ZnO varistors. In this work, SnO2-nanoparticles based-varistors with addition of 1.0 %mol of ZnO and 0.05 %mol of Nb2O5 were synthesized by chemical route. SnO2.ZnO.Nb2O5-films with 5 μm of thickness were obtained by electrophoretic deposition (EPD) of the nanoparticles on Si/Pt substrate from alcoholic suspension of SnO2-based powder. The sintering step was carried out in a microwave oven at 1000 °C for 40 minutes. Then, Cr3+ ions were deposited on the films surface by EPD after the sintering step. Each sample was submitted to different thermal treatments to improve the varistor behavior by diffusion of ions in the samples. The films showed a nonlinear coefficient (α) greater than 9, breakdown voltage (VR) around 60 V, low leakage current (IF ≈ 10-6 A), height potential barrier above 0.5 eV and grain boundary resistivity upward of 107 Ω.cm.
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)