Er3+/Yb3+ co-activated silica-alumina monolithic xerogels

Monolithic silica xerogels doped with different concentrations of Er3+, Yb3+ and Al3+ were prepared by sol-gel route. Densification was achieved by thermal treatment in air at 950degreesC for 120 h with a heating rate of 0.1degreesC/min. We studied the luminescence properties of the I-4(13/2)-->I-4(15/2) emission band of Er3+ as a function of the Al/Er/Yb concentration and we paid particular attention to the alumina effects. Raman spectroscopy and Vis-NIR absorption were used to monitor the degree of densification of the glasses and the residual OH content.

Electro-optical properties of Er-doped SnO2 thin films

Photoconductivity of SnO2 sol-gel films is excited, at low temperature, by using a 266 nm line-fourth harmonic-of a Nd:YAG laser. This line has above bandgap energy and promotes generation of electron-hole pairs, which recombines with oxygen adsorbed at grain boundary. The conductivity increases up to 40 times. After removing the illumination on an undoped SnO2 film, the conductivity remains unchanged, as long as the temperature is kept constant. Adsorbed oxygen ions recombine with photogenerated holes and are continuously evacuated from the system, leaving a net concentration of free electrons into the material, responsible for the increase in the conductivity. For Er doped SnO2, the excitation of conductivity by the laser line has similar behavior, however after removing illumination, the conductivity decreases with exponential-like decay. (C) 2003 Elsevier Ltd. All rights reserved.

Formation of SnO2 supported porous membranes

In this work, the effect of the substrate microstructure on the formation of SnO2 membranes and of the sintering conditions on their porosity have been analysed. Samples have been prepared by colloidal suspensions cast on alumina or kaolin substrates. Supported membranes have been characterized by Hg porosimetry, MEV, XRD and N-2 adsorption-desorption isotherms. The results show that the narrower pore size distribution of alumina substrate allowed to prepare membranes more homogeneous and free of cracks than that supported on kaolin. The crystallite and pore sizes of the membranes could be controlled by adjusting the temperature of sintering, allowing materials with adequate microstructure with application for ultrafiltration process.

Distributed feedback multipeak laser emission in Rhodamine 6G doped organic-inorganic hybrids

Organic-inorganic hybrid materials were prepared from an ureasil precursor (ureapropyltriethoxysilane designated as UPTES) and acrylic acid modified zirconium (IV) n-propoxide. Thin films containing rhodamine 6G (Rh6G) were prepared by spin-coating on glass substrates with different Zr:Si molar ratios (Zr:Si = 75:25, 50:50 and 25:75). Refractive index, thickness, number of propagating modes and attenuation coefficient were measured at 543.5, 632.8 and 1550 nm wavelengths by the prism coupling technique. Distributed feedback (DFB) laser effect was observed and studied as a function of films thickness and refractive index.

Electron trapping of laser-induced carriers in Er-doped SnO2 thin films

In order to investigate optically excited electronic transport in Er-doped SnO2, thin films are excited with the fourth harmonic of an Nd:YAG laser (266nm) at low temperature, yielding conductivity decay when the illumination is removed. Inspection of these electrical characteristics aims knowledge for electroluminescent devices operation. Based on a proposed model where trapping defects present thermally activated cross section, the capture barrier is evaluated as 140, 108, 100 and 148 meV for doped SnO2, thin films with 0.0, 0.05, 0. 10 and 4.0 at% of Er, respectively. The undoped film has vacancy levels as dominating, whereas for doped films. there are two distinct trapping centers: Er3+ substitutional at Sn lattice sites and Er3+ located at grain boundary. (C) 2007 Elsevier Ltd. All rights reserved.

Improvement of the corrosion resistance of polysiloxane hybrid coatings by cerium doping

Polysiloxane hybrid films were deposited on stainless steel by dip-coating using a sol prepared by hydrolytic co-polycondensation of tetraethoxysilane (TEOS) and 3-methacryloxy propyltrimethoxysilane (MPTS), followed by radical polymerization of methacrylic moieties. The TEOS/MPTS ratio was chosen equal to 2 and the Ce/Si ratio varied between 0.01 and 0.1. The effects of cerium concentration and valence (Ce(III) and Ce (IV)) on the structural features of polysiloxane films were studied by X-ray photoelectron spectroscopy (XPS) and (29)Si nuclear magnetic resonance (NMR). The corrosion protection of stainless steel by the hybrid coatings was investigated by XPS, electrochemical impedance spectroscopy (EIS) and potentiodynamic polarization curves, after immersion in saline and acid solutions. The NMR results have shown for Ce(IV) doped films a high degree of polycondensation of up to 89%. Electrochemical analysis has evidenced that hybrid films with the lowest Ce concentration act as an efficient diffusion barrier by increasing the corrosion resistance and reducing the current densities up to 3 orders of magnitude compared to bare stainless steel. The analysis of structural effects induced by Ce(III) and Ce(IV) species, performed by XPS, indicates that the improved corrosion protection of Ce(IV) doped films might be mainly related to the enhanced polymerization of siloxane groups. (C) 2010 Elsevier B.V. All rights reserved.

SiO2-GeO2 soot preform as a core for Eu2O3 nanocoating: Synthesis and photophysical study

Nowadays solid state chemists have the possibility of work with low temperature strategies to obtain solid state materials with appropriate physical and chemical properties for useful technological applications. Photonic core shell materials having a core and shell domains composed by a variety of compounds have been synthesized by different methods. In this work we used silica-germania soot prepared by vapor-phase axial deposition as a core where a nanoshell of Eu2O3 was deposited. A new sol-gel like method was used to obtain the Eu2O3 nanoshell coating the SiO2-GeO2 particles, which was prepared by the polymeric precursor method. The photophysical properties of Eu3+ were used to obtain information about the rare earth surrounding in the SiO2-GeO2@Eu2O3 material during the sintering process. The sintering process was followed by the luminescence spectra of Eu3+ and all the samples present the characteristic emission related to the D-5(0) -> F-7(J) (J=0, 1, 2, 3 and 4). The ratios of the D-5(0) -> F-7(2)/D-5(0) -> F-7(1) emission intensity for the SiO2-GeO2@Eu2O3 systems were calculated and it was observed an increase in its values, indicating a low symmetry around the Eu3+ as the temperature increases.

Optical emission and electron capture of rare-earth trivalent ions located at distinct sites in SnO(2) thin films

We present photoluminescence and decay of photo excited conductivity data for sol-gel SnO(2) thin films doped with rare earth ions Eu(3+) and Er(3+), a material with nanoscopic crystallites. Photoluminescence spectra are obtained under excitation with several monochromatic light sources, such as Kr(+) and Ar(+) lasers, Xe lamp plus a selective monochromator with UV grating, and the fourth harmonic of a Nd: YAG laser (4.65eV), which assures band-to-band transition and energy transfer to the ion located at matrix sites, substitutional to Sn(4+). The luminescence structure is rather different depending on the location of the rare-earth doping, at lattice symmetric sites or segregated at grain boundary layer, where it is placed in asymmetric sites. The decay of photo-excited conductivity also shows different trapping rate depending on the rare-earth concentration. For Er-doped films, above the saturation limit, the evaluated capture energy is higher than for films with concentration below the limit, in good agreement with the different behaviour obtained from luminescence data. For Eu-doped films, the difference between capture energy and grain boundary barrier is not so evident, even though the luminescence spectra are rather distinct.

Study of the influence of the rare earth elements (Ce3+ and Ce4+) concentration on the siloxanes coating applied on the copper surface

This work studied the influence of the rare earth (Ce3+ and Ce4+) elements concentration in polysiloxane flints deposited on copper by dip-coating process, and evaluated their resistance in a 3.5 wt.% NaCl medium. Classical electrochemistry techniques were used as open circuit potential, polarization curves and electrochemical impedance spectroscopy. The results revealed that by adding low concentration of Ce4+ ions, the coating prevents the electrolyte uptake any longer retarding the substrate degradation consequently. ©The Electrochemical Society.

Deposition and photo-induced electrical resistivity of dip-coated NiO thin films from a precipitation process

Thin films of the semiconductor NiO are deposited using a straightforward combination of simple and versatile techniques: the co-precipitation in aqueous media along with the dip- coating process. The obtained material is characterized by gravimetric/differential thermal analysis (TG-DTA) and X-ray diffraction technique. TG curve shows 30 % of total mass loss, whereas DTA indicates the formation of the NiO phase about 578 K (305 C). X-ray diffraction (XRD) data confirms the FCC crystalline phase of NiO, whose crystallinity increases with thermal annealing temperature. UV-Vis optical absorption measurements are carried out for films deposited on quartz substrate in order to avoid the masking of bandgap evaluation by substrate spectra overlapping. The evaluated bandgap is about 3.0 eV. Current-voltage (I-V) curves measured for different temperatures as well as the temperature-dependent resistivity data show typical semiconductor behavior with the resistivity increasing with the decreasing of temperature. The Arrhenius plot reveals a level 233 meV above the conduction band top, which was attributed to Ni2+ vacancy level, responsible for the p-type electrical nature of NiO, even in undoped samples. Light irradiation on the films leads to a remarkable behavior, because above bandgap light induced a resistivity increase, despite the electron-hole generation. This performance was associated with excitation of the Ni 2+ vacancy level, due to the proximity between energy levels. © 2012 Springer Science+Business Media New York.

Nanoparticle characterization of Er-doped SnO2 pellets obtained with different pH of colloidal suspension

SnO2:2 at. %Er xerogel samples were obtained by sol-gel technique from colloidal suspensions with distinct pHs. The evaluation of critical regions inside the nanocrystallite is fundamental for the interpretation of the influence of pH on the emission data. In this way, the nanocrystal depletion layer thickness was obtained with the help of photoluminescence, Raman, X-ray diffraction, and field-emission gun scanning electron microscopy measurements. It was observed that acid suspensions (pH < 7) lead to high surface disorder in which a larger number of cross-linked bonds Sn-O-Sn among nanoparticles are present. For these samples, the nanoparticle depletion layer is larger as compared to samples obtained from other pH. Photoluminescence measurement in the near infrared region indicates that the emission intensity of the transition 4I13/2 → 4I15/2 is also influenced by the pH of the starting colloidal suspension, generating peaks more or less broadened, depending on location of Er3+ ions in the SnO2 lattice (high or low symmetry sites). © 2013 AIP Publishing LLC.

Síntese e caracterização de nanopartículas e filmes finos de óxidos semicondutores

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Filmes finos de ZnO como óxidos condutores transparentes aplicados à células solares

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Preparação e caracterização de filmes óxidos contendo componentes opticamente ativos

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Desenvolvimento e otimização de materiais nanocristalinos para células solares sensibilizadas

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)