Sonochemical effects on ZnO particles

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Desenvolvimento de procedimentos e métodos analíticos no campo forense aplicando os princípios da química verde

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Estudos biológicos de nanopartículas de óxido de zinco: interação com proteínas e avaliação de “Burst” oxidativo de leucócitos

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Desempenho da aplicação foliar de zinco em feijoeiro

The nutritional requirements of crops, in general, becomes more intense with the beginning of the reproductive phase, being more critical at the time of seed formation, when considerable amounts of nutrients are they translocation, this requirement should be increased to the fact that nutrients are essential to training and development of new bodies of booking. This study aimed to evaluate the agronomic efficiency of foliar application of zinc (zinc oxide Zn 700 g L-1 ) in bean plant, compared to leaf application of zinc sulphate (ZnSO4) and control (without application of Zn). The experiment was installed in the Faculty of Agricultural Sciences - UNESP / Campus de Botucatu-SP. Was placed in containers with a capacity of 20L of soil and leaf applications encompassing four schemes and two of rain, with 5 replicates per treatment, a total of 40 vessels. The results for the factorial design did not show in general, significantly different answers when evaluated on the simulation of rain or the lack of simulation. The treatment (700g L-1 of ZnO) has demonstrated agronomic efficiency as its foliar application, with results equal or exceed the application of ZnSO4 and control when applied at the same dose of Zn.

Testes convencionais e empregando Micro-CT na avaliação de propriedades físico-químicas de materiais retrobturadores e cimentos endodônticos

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Incorporação de nanopartículas de óxido de zinco a um cimento de ionômero de vidro por meio da calcinação: avaliação de propriedades mecânicas e físicas

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Membranas de biocelulose como substrato para o crescimento de nanofios de ZnO: síntese e aplicação

Pós-graduação em Química - IQ

Structural and Electric-Optical Properties of Zinc Phthalocyanine Evaporated Thin Films: Temperature and Thickness Effects

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Layer-by-layer hybrid films of polyaniline and vanadium oxide

Supramolecular structures of polyaniline (PANI) and vanadium oxide (V2O5) have been assembled via the electrostatic layer-by-layer (LBL) technique. The films were characterized by vibrational analyses which indicated that the interactions between the two components lead to different properties in the films when compared to sol-gel films. of the neat compounds. In particular, using surface enhanced Raman scattering we were able to probe LBL film properties that depend on which material comprises the topmost layer.

Femtosecond nonlinear optical properties of lead-germanium oxide amorphous films

The nonlinear (NL) response of lead-germanium oxide amorphous films was investigated using a Ti:saphire laser delivering pulses of approximate to 150 fs at 800 nm. The Kerr shutter technique was employed to reveal the time response of the nonlinearity that is smaller than 150 fs. The sign and magnitude of the nonlinearity were obtained using a novel technique called thermally managed eclipse Z scan which allows the simultaneous characterization of cumulative and noncumulative NL effects. The NL refractive index of electronic origin, n(2)approximate to 2x10(-17) m(2)/W, and the NL absorption coefficient, alpha(2)approximate to 3x10(3) cm/GW, were determined. (c) 2007 American Institute of Physics.

Influence of ambient gas on the growth and properties of porous tin-doped indium oxide thin films made by pulsed laser deposition

The laser ablation method was used for depositing porous nanocrystalline indium-tin oxide thin films for gas sensing applications. Samples were prepared at different pressures using three gases (O-2, 0.8N(2):0.2O(2), N-2) and heat-treated in the same atmosphere used for the ablation process. X-ray diffraction results show that the films are not oriented and the grain sizes are in the range between 15 and 40 nm. The grains are round shaped for all samples and the porosity of the films increases with the deposition pressure. The degree of sintering after heat treatment increases for lower oxygen concentrations, generating fractures on the surface of the samples. Film thicknesses are in the range of I pm for all gases as determined from scanning electron microscopy cross-sections. Electrical resistance varies between 36.3 ohm for the film made at 10 Pa pressure in N-2 until 9.35 x 10(7) ohm for the film made at 100 Pa in O-2. (C) 2007 Elsevier B.V. All rights reserved.

Dielectric and fatigue properties of Pb(Zr0.53Ti0.47)O-3 thin films prepared from oxide precursors method

Fatigue is an important problem to be considered if a ferroelectric film is used for non-volatile memory devices. In this phenomena, the remanent polarization and coercive field properties degrades in cycles which increase in hysteresis loops. The reasons have been attributed to different mechanisms such as a large voltage applied on ferroelectric film in every reading process in Ferroelectric Random Access Memory (FeRAM) or memories for digital storage in computer, grain size effects and others. The aim of this work is to investigate the influence of the crystallization kinetics on dielectric and ferroelectric properties of the Pb(Zr0.53Ti0.47)O-3 thin films prepared by an alternative chemical method. Films were crystallized in air on Pt/Ti/SiO2/Si substrates at 700 degrees C for 1 hour, in conventional thermal annealing (CTA), and at 700 degrees C for 1 min and 700 degrees C 5 min, using a rapid thermal annealing (RTA) process. Final films were crack free and presented an average of 750 nm in thickness. Dielectric properties were studied in the frequency range of 100 Hz - 1 MHz. All films showed a dielectric dispersion at low frequency. Ferroelectric properties were measured from hysteresis loops at 10 kHz. The obtained remanent polarization (P-r) and coercive field (E-c) were 3.7 mu C/cm(2) and 71.9 kV/cm respectively for film crystallized by CTA while in films crystallized by RTA these parameters were essentially the same. In the fatigue process, the P, value decreased to 14% from the initial value after 1.3 x 10(9) switching cycles, for film by CTA, while for film crystallized by RTA for 5 min, P, decreased to 47% from initial value after 1.7 x 10(9) switching cycles.

Effect of temperature on glass-ceramic films prepared by impregnation of commercial float glass surfaces with oxide powders under pressure

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Nanomechanical properties of glass-ceramic films obtained by pressure impregnation of oxide powders on commercial float glass surfaces

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Structural, dielectric and ferroelectric properties of Nb-doped PZT thin films produced by oxide precursor method

Recently, was proposed a chemical method for preparation of ferroelectric thin films based on oxide precursors. In this work, PZT thin films were prepared to attest the viability of this method for cation-substitution. In this study, a small concentration of Nb (5 mol%) was selected as substitute of B-site in ABO 3 structure of PZT. Dielectric and ferroelectric properties of PZT films were studied as a function of cation-substitution. Results for Nb-PZT were compared with PZT films undoped. The values of dielectric constant, at typical 100 kHz frequency, were 358 and 137, for PZT and Nb-PZT films respectively. Remanent polarizations of these films were respectively 7.33 μ C/cm 2 and 13.3 μ C/cm 2 , while the measured coercive fields were 101 kV/cm and 93 kV/cm. As a result, changes on observed dielectric and ferroelectric values confirm the Nb substitution in PZT thin film produced by oxide precursor method. © 2002 Taylor & Francis.