Structural and optical properties of CaTiO3 perovskite-based materials obtained by microwave-assisted hydrothermal synthesis: An experimental and theoretical insight

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Lanthanum-doped Bi4Ti3O12 prepared by the soft chemical method: Rietveld analysis and piezoelectric properties

Bi4-xLaxTi3O12 (BLT) thin films and powders with x ranging from 0 to 0.75 were prepared by the polymeric precursor solution. The effect of lanthanum on the structure of BIT powders was investigated by Rietveld Method. The increase of lanthanum content does not lead to any secondary phases. Orthorhombicity of the bismuth titanate (BIT) crystal lattice decreased with the increase of lanthanum content due the reduction of a/b ratio. The BLT films show piezoelectric coefficients of 45, 19, 16 and 10 pm/V for x = 0, 0.25, 0.50 and 0.75, respectively. The piezoelectric response is strongly reduced by the amount of lanthanum added to the system. (c) 2006 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

Effect of the microwave oven on structural, morphological and electrical properties of SrBi4Ti4O15 thin films grown on Pt/Ti/SiO2/Si substrates by a soft chemical method

Thin films of SrBi4Ti4O15 (SBTi), a prototype of the Bi-layered-ferroelectric oxide family, were obtained by a soft chemical method and crystallized in a domestic microwave oven. For comparison, films were also crystallized in a conventional method at 700 degrees C for 2 h. Structural and morphological characterization of the SBTi thin films were investigated by Xray diffraction (XRD) and atomic force microscopy (AFM), respectively. Using platinum coated silicon substrates, the ferroelectric properties of the films were determined. Remanent polarization P-r and a coercive field E-c values of 5.1 mu C/cm(2) and 135 kV/cm for the film thermally treated in the microwave oven and 5.4 mu C/cm(2) and 85 kv/cm for the film thermally treated in conventional furnace were found. The films thermally treated in the conventional furnace exhibited excellent fatigue-free characteristics up to 10(10) switching cycles indicating that SBTi thin films are a promising material for use in non-volatile memories. (C) 2007 Elsevier B.V. All rights reserved.

Electrical and Optical Properties of Conductive and Transparent ITO@PMMA Nanocomposites

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Influence of organic-mineral fertilization of an oxisol on soil chemical properties and Bracharia brizantha production

A utilização de fertilizante organomineral da indústria produtora dos aminoácidos lisina e treonina pode melhorar a fertilidade de solos tropicais. O presente trabalho teve como objetivo avaliar a influência de diferentes dosagens do fertilizante organomineral denominado Ajifer L-14 nos atributos químicos e no aumento de produção de forragem de um Latossolo Vermelho do noroeste paulista. O delineamento utilizado foi em blocos casualizados, com sete tratamentos e quatro repetições. Os tratamentos foram: T1- testemunha (sem aplicação de Ajifer L-14); T2- testemunha com vegetação natural; T3- adubação mineral de acordo com a necessidade da cultura e a análise do solo (usando 1,35 kg de ureia, 2,20 kg de superfosfato simples e 0,51 kg de KCl por parcela, o que corresponde a 60 kg de N, 40 kg de P2O5 e 30 kg ha-1 de K2O, respectivamente); T4- adubação com Ajifer L-14 de acordo com a recomendação da análise química do solo (40 L parcela-1, o que corresponde a 60 kg ha-1 N); T5- adubação com Ajifer L-14 em dosagem 50 % acima da recomendação (60 L parcela-1, o que corresponde a 90 kg ha-1 N; T6- adubação com Ajifer L-14 em dosagem 50 % abaixo da recomendação (20 L parcela-1, o que corresponde a 30 kg ha-1 N); T7- adubação com Ajifer L-14 em dosagem 25 % acima da recomendação (50 L parcela-1, o que corresponde a 75 kg ha-1 N); e T8- adubação com Ajifer L-14 em dosagem 25 % abaixo da recomendação (30 L parcela-1, o que corresponde a 45 kg ha-1 N). Nas profundidades de 0,0-0,1 e 0,1-0,2 m, avaliaram-se os seguintes atributos químicos do solo:, teor de matéria orgânica (MO), pH, K+, Ca2+, Mg2+, capacidade de troca catiônica (CTC), acidez potencial e saturação por bases. A aplicação do fertilizante organomineral não influenciou os atributos químicos do solo. Na análise de regressão, houve relação polinomial entre as doses de aplicação do fertilizante organomineral e a produção de massa seca e proteína bruta de Bracharia brizantha.

Revegetation and Soil Management Effects on Chemical Properties of a Saprolite Resulting from Deep Soil Removal

During the building of a hydroelectrical power plant at Ilha Solteira in the Parana River (Brazil), materials of a highly weathered soil Oxisol were extracted from a depth between 5 and 8 m for engineering works. This resulted in an abandoned depression area. The topsoil was not salvaged and the open pit was not backfilled, and as result vegetation hardly or not at all recovered. on the residual saprolite materials, an experimental field was established to assess different soil rehabilitation treatments. Field experiments were initiated in 1992. After soil tillage, two different crops and three different liming strategies were compared, giving six combinations. In addition, two uncropped control treatments, tilled and no-tilled, were established so that a total of eight treatments were assessed. The experimental design consisted of four randomized experimental blocks, which included a total of 32 plots with a plot area of 100 m(2). This experiment was used to study the effectiveness of the soil-reclamation treatments after a 9-year period. Soil samples were taken at three different depths (0-10, 10-20, and 20-40 cm), and they were analyzed routinely for pH, organic-matter content, and cation exchange capacity (CEC). Revegetation of the abandoned saprolite material increased soil organic-matter content and cation exchange capacity (CEC), and to some extent small differences between treatments were evidenced. Exchangeable calcium (Ca) and magnesium (Mg) recovered faster than organic-matter content. A significant linear relationship was found between organic-matter content and CEC, suggesting continued addition of organic material will further approach the value of these parameters to those levels corresponding to natural soils under "Cerrado" vegetation.

Ferroelectric and dielectric properties of Ba0.5Sr0.5(Ti0.80Sn0.20)O-3 thin films grown by the soft chemical method

Polycrystalline Ba0.5Sr0.5(Ti0.80Sn0.20)O-3 (BST:Sn) thin films with a perovskite structure were prepared by the soft chemical method on a platinum-coated silicon substrate from spin-coating technique. The resulting thin films showed a dense structure with uniform grain size distribution. The dielectric constant of the films estimated from C-V curve is around 1134 and can be ascribed to a reduction in the oxygen vacancy concentration. The ferroelectric nature of the film indicated by butterfly-shaped C-V curves and confirmed by the hysteresis curve, showed remnant polarization of 14 mu C/cm(2) and coercive field of 74 kV/cm at frequency of 1 MHz. At the same frequency, the leakage current density at 1.0 V is equal to 1.5 x 10(-7) A/cm(2). This work clearly reveals the highly promising potential of BST:Sn for application in memory devices. (c) 2006 Elsevier B.V. All rights reserved.

Optical and structural properties of GaAs/GaInP quantum wells grown by Chemical Beam Epitaxy

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Microstructural, dielectric and ferroelectric properties of calcium-modified lead titanate thin films derived by chemical processes

Ferroelectric Pb1-xCaxTiO3 (x = 0.24) thin films were formed on a Pt/Ti/SiO2/Si substrate by the polymeric precursor method using the dip-coating technique for their deposition. Characterization of the films bq X-ray diffraction showed a perovskite single phase with a tetragonal structure after annealing at 700 degreesC. Atomic force microscopy (AFM) analyses showed that the film had a smooth and crack-free surface with low surface roughness. In addition, the PCT thin film had a granular structure with an 80 nm grain size. The thickness of the films observed by the scanning electron microscopy (SEM) is 550 nm and there is a good adhesion between the film and substrate. For the electrical measurements metal-ferroelectric-metal of the type capacitors were obtained, where the thin films showed good dielectric and ferroelectric properties. The dielectric constant and dissipation factor at 1 kHz and measured at room temperature were found to be 457 and 0.03. respectively. The remanent polarization and coercive field for the: deposited films were P-r = 17 muC/cm(2) and E-c = 75 kV/cm, respectively. Moreover. The 550-nm-thick film showed a current density in the order of 10(-8) A/cm(2) at the applied voltage of 2 V. The high values of the thin film's dielectric properties are attributed to its excellent microstructural quality and the chemical homogeneity obtained by the polymeric precursor method. (C) 2001 Elsevier science Ltd. All rights reserved.

Improvement of the dielectric and ferroelectric properties in superlattice structure of Pb(Zr,Ti)O-3 thin films grown by a chemical solution route

Making heterolayered perovskite materials constitutes an approach for the creation of better dielectric and ferroelectric properties. In the experiment reported here, heterolayered PZT40/PZT60 films were grown on Pt/Ti/SiO2/Si (100) by a chemical solution deposition. The dielectric constant of the heterolayered thin film was significantly enhanced compared with that of pure PZT40 and PZT60 thin films. A dielectric constant of 701 at 100 kHz was observed for a stacking periodicity of six layers having a total thickness of 150 nm. The heterolayered film exhibited greater remanent polarization than PZT60 and PZT40 films. The values of remanent polarization were 7.9, 18.5, and 31 muC/cm(2), respectively, for pure PZT60, PZT40, and heterolayered thin films, suggesting that the superior dielectric and ferroelectric properties of the heterolayered thin film resulted from a cooperative interaction between the ferroelectric phases made from alternating tetragonal and rhombohedral phases of PZT, simulating the morphotropic phase boundary of this system. (C) 2004 American Institute of Physics.

Structural and electrical properties of SrBi2Nb2O9 thin films prepared by chemical aqueous solution at low temperature

SrBi2Nb2O9 (SBN) thin films were prepared by the polymeric precursors method and deposited by dip coating onto Pt/Ti/SiO2/Si(100) substrates. The dip-coated films were specular and crack-free and crystallized during firing at 700 degrees C. Microstructure and morphological evaluation were followed by grazing incident X-ray diffraction (GIXRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The films exhibited somewhat porous grain structure with rounded grains of about 100 nm. For the electrical measurements, gold electrodes of 300 mu m in diameter were sputter deposited on the top surface, forming a metal-ferroelectric-metal (MFM) configuration. The remanent polarization (P-r) and coercive field (E-c) were 5.6 mu C/cm(2) and 100 kV/cm, respectively. (C) 1999 Elsevier B.V. B.V. All rights reserved.

Ferroelectric and piezoelectric properties of bismuth titanate thin films grown on different bottom electrodes by soft chemical solution and microwave annealing

Bismuth titanate (Bi4Ti3O12, BIT) films were evaluated for use as lead-free piezoelectric thin films in micro-electromechanical systems. The films were grown by the polymeric precursor method on LaNiO3/SiO2/Si (1 0 0) (LNO), RuO2/SiO2/Si (1 0 0) (RuO2) and Pt/Ti/SiO2/Si (1 0 0) (Pt) bottom electrodes in a microwave furnace at 700 degrees C for 10 min. The domain structure was investigated by piezoresponse force microscopy (PFM). Although the converse piezoelectric coefficient, d(33), regardless of bottom electrode is around (similar to 40 pm/V), those over RuO2 and LNO exhibit better ferroelectric properties, higher remanent polarization (15 and 10 mu C/cm(2)), lower drive voltages (2.6 and 1.3 V) and are fatigue-free. The experimental results demonstrated that the combination of the polymeric precursor method assisted with a microwave furnace is a promising technique to obtain films with good qualities for applications in ferroelectric and piezoelectric devices. (c) 2006 Elsevier Ltd. All rights reserved.

Physical, chemical and microbiological characterization of the intertidal sediments of Pereque Beach, Guaruja (SP), Brazil

Physical and chemical characteristics of intertidal sediments and their relationships with bacteria and cyanobacteria, were analyzed at four stations at Pereque Beach. Granulometric analysis showed that Pereque beach has sediment that is classified as sand. The lowest value of the sediment C/N rates (6.08), mainly due to a higher concentration of organic nitrogen, was found at the northern part of Pereque Beach, where organic matter of marine source was more prominent. In this area, density (9.6 x 106 cells cm(-3)), biomass (1992.04 ngC cm(-3)) and activity of bacteria were higher than at the southern end. In contrast, cyanobacteria density varied from 2.0 to 4.0 x 10(5) cells cm(-3), with biomass and total chlorophyll a of the sediment being higher at the southern part, where there are water input from Pereque River and higher organic matter of continental origin. The variability in the microbial population is discussed in the light of the sediment granulometry, organic matter quality, fresh water inflow and pollution. (c) 2007 Elsevier Ltd. All rights reserved.

Microstructural and transport properties of LaNiO3-delta films grown on Si(111) by chemical solution deposition

Electrically conductive LaNiO3-delta (LNO) thin films with typical thickness of 200 nm were deposited on Si (111) substrates by a chemical solution deposition method and heat-treated in air at 700 degreesC. Structural, morphological, and electrical properties of the LNO thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), field-emission scanning electron microscopy (FEG-SEM), and electrical resistivity rho(T). The thin films have a very flat surface and no droplet was found on their surfaces. The average grain size observed by AFM and FEG-SEM was approximately 100 nm in excellent agreement with XRD data. The rho(T) data showed that these thin films display a good metallic character in a large range of temperature. These results suggest the use of this conductive layer as electrode in the integration of microelectronic devices. (C) 2003 Elsevier B.V. All rights reserved.

Electronic and structural properties of the (10(1)over-bar0) and (11(2)over-bar0) ZnO surfaces

The structural and electronic properties of ZnO (10 (1) over bar0) and (11 (2) over bar0) surfaces were investigated by means of density functional theory applied to periodic calculations at B3LYP level. The stability and relaxation effects for both surfaces were analyzed. The electronic and energy band properties were discussed on the basis of band structure as well as density of states. There is a significant relaxation in the (10 (1) over bar0) as compared to the (11 (2) over bar0) terminated surfaces. The calculated direct gap is 3.09, 2.85, and 3.09 eV for bulk, (10 (1) over bar0), and (11 (2) over bar0) surfaces, respectively. The band structures for both surfaces are very similar.