Inclusão e cidadania digital no Brasil: a (des) articulação das políticas públicas

The incipient but quickly expansion action on the Information and Communications Technologies (ICT) in Africa it is now just having different impact on these societies. One of these relates bear on how users are identified with these tools. Just like that we find individuals identify as bloggers, twitter followers or cyber activist. This contribution analyzes the Senegal’s fact where a successful use of social nets and web 2.0 tools experience (at least in repercussion) as social and political involvement while presidential elections in 2012 is tied to come back an identity: Cyber activist. Senegalese circumstance shows us how this identity has a personal and assertiveness dimension as well collective aspects of belonging to a community. One as much as the other, show us personal traits in contrast to previous beliefs, basically because it fuse and confuse virtual and reality. Due to dynamics from expanding technology, this identity is youthful and urban, but not only. This situation creates new dynamics at least in this affected group. For this reason, besides knowing emergence and evolution of this fact, it raises some of the involvement in social and political involvement from groups traditionally “invisible”. Beyond the new social behavior there are new changes in the rules of the game in order to start new social revolution.

First-principles simulation of elastic constants and electronic properties of GaN

The electronic and structural properties and elastic constants of the wurtzite phase of GaN, was investigated by computer simulation at Density Functional Theory level, with B3LYP and B3PW hybrid functional. The electronic properties were investigated through the analysis of the band structures and density of states, and the mechanical properties were studied through the calculus of the elastic constants: C11, C33, C44, C12, and C13. The results show that the maximum of the valence band and the minimum of the conduction band are both located at the Γ point, indicating that GaN is a direct band gap semiconductor. The following constants were obtained for B3LYP and B3PW (in brackets): C11 = 366.9 [372.4], C33 = 390.9 [393.4], C44 = 99.1 [96.9], C12 = 143.6 [155.2], and C13 = 107.6 [121.4].

Inativação fotodinâmica em biofilme de Streptococcus mutans sobre bráquetes metálicos e cerâmicos: um estudo in vitro

Pós-graduação em Odontologia Restauradora - ICT

Estudo comparativo dos programas de habitação social nas cidades de Franca/Brasil e Praia/Cabo Verde: convergências e discrepâncias

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Avaliação in vitro do tempo de fotopolimerização com led de alta potência de bráquetes ortodônticos e remoção de adesivo remanescente sob luz ultravioleta

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Violência na escola pública?: o estudo de uma realidade no município de Franca-SP

Pós-graduação em Serviço Social - FCHS

Políticas de desenvolvimento regional-territorial e governança: uma análise recente sobre o Estado do Maranhão (Brasil)

Pós-graduação em Geografia - IGCE