166 resultados para Annealing of metals.


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Lead lanthanum zirconate titanate (PLZT) thin films with stoichiometry (9/65/35) were prepared by a dip-coating process using a polymeric organic solution. The solution viscosity was adjusted in the range of 15-56 cP. Silicon (100) substrates were previously cleaned and then immersed in the solution. The withdrawal speed of substrate from the solution was adjusted within a range of 5 to 20 mm/min. The coated substrates were thermally treated in the 450-700 degreesC temperature range. Surface roughness and crystallization of these films are strongly dependent on the annealing conditions. Infrared and X-ray diffraction data for PLZT powders heat-treated at 650 degreesC for 3 h show that the material is free of carbonate phases and crystalline. (C) 2001 Elsevier B.V. B.V. All rights reserved.

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Ba(Zr0.50Ti0.50)O-3 thin films were prepared by the polymeric precursor method using the annealing low temperature of 300 degrees C for 8, 16, 24, 48, 96 and 192 It in a furnace tube with oxygen atmosphere. The X-ray diffraction patterns revealed that the film annealed for 192 h presented some crystallographic planes (1 0 0), (1 1 0) and (2 0 0) in its crystalline lattice. Fourier transformed infrared presented the formation of metal-oxygen stretching at around 756 cm(-1). The atomic force microscopy analysis presented the growth of granules in the Ba(Zr0.50Ti0.50)O-3 films annealed from 8 to 96 h. The crystalline film annealed for 192 h already presents grains in its perovskite structure. It evidenced a reduction in the thickness of the thin films with the increase of the annealing time. (C) 2006 Elsevier B.V. All rights reserved.

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Ca(Zr0.05Ti0.95)O-3 (CZT) thin films were prepared by the polymeric precursor method by spin-coating process. The films were deposited on Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates and annealed at 650 degrees C for 2,4, and 6 It in oxygen atmosphere. Structure and morphology of the CZT thin films were characterized by the X-ray diffraction (XRD), Fourier-transform infrared spectroscopy (FT-IR), atomic force microscopy (AFM) and field-emission scanning electron microscopy (FEG-SEM). XRD revealed that the film is free of secondary phases and crystallizes in the orthorhombic structure. The annealing time influences the grain size, lattices parameter and in the film thickness. (c) 2006 Elsevier B.V. All rights reserved.

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Crystalline molybdate thin films were prepared by the complex polymerization method. The AMoO(4) (A = Ca, Sr, Ba) films were deposited onto Si wafers by the spinning technique. The Mo-O bond in the AMoO(4) structure was confirmed by FTIR spectra. X-ray diffraction revealed the presence of crystalline scheelite-type phase. The mass, size, and basicity of A(2+) cations was found to be dependent on the intrinsic characteristics of the materials. The grain size increased in the following order: CaMoO4 < SrMoO4 < BaMoO4. The emission band wavelength was detected at around 576 nm. Our findings suggest that the material's morphology and photoluminescence were both affected by the variations in cations (Ca, Sr, or Ba) and in the thermal treatment.

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Ferroelectric SrBi2Ta2O9 thin films on Pt/Ti/SiO2/Si were successfully synthesized by the modified polymeric precursor method. The films were deposited by spin coating and crystallized by rapid thermal annealing in a halogen lamp furnace, followed by postannealing at temperatures ranging from 700 degreesC to 800 degreesC in an oxygen atmosphere. Microstructural and phase evaluations were followed by x-ray diffraction and atomic force microscopy. The films displayed spherical grain structures with a superficial roughness of approximately 3-6 nm. The dielectric constant values were 121 and 248 for films treated at 700 degreesC and 800 degreesC, respectively. The P-E curve showed a voltage shift toward the positive side, which was attributed to crystallization under the halogen illumination. The remanent polarization (2P(r)) and coercive field (E-c) were 7.1 muC/cm(2) and 113 kV/cm, and 18.8 muC/cm(2) and 93 kV/cm for the films treated at 700 degreesC and 800 degreesC, respectively. (C) 2001 American Institute of Physics.

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Kinetics of short-range ordering (SRO) in Ag with 21, 23 and 28 at% Zn is investigated by residual resistometry during isochronal and isothermal heat treatment for different states of post-deformation defect annealing after cold-rolling to about 30 and 60% thickness reduction. Resistivity changes due to pure ordering can be separated from the as-measured total resistivity change which includes defect annealing. Although the initial state of SRO of the as-rolled material can be estimated to be comparably low, for as-rolled and partially annealed states by appropriate thermal treatment evolution of SRO is achieved which corresponds quite well to that of recrystallized samples. It is observed, however, that quenched-in surplus vacancies contribute considerably to the ordering process for the recrystallized state and that this contribution is still increased by the grain growth during the final stage of annealing. It therefore turns out that SRO-kinetics under equilibrium vacancy conditions can be better observed in a state of post-deformation annealing, for which deformation induced point defects are annealed-out, but a relatively high dislocation density is still present to act as a vacancy sink. Copyright (C) 1996 Acta Metallurgica Inc.