Sizing PZT Transducers in Impedance-Based Structural Health Monitoring

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Characterization of the temperature, load and damage effects using piezoelectric transducer patches based on fuzzy clustering

Structural Health Monitoring (SHM) denotes a system with the ability to detect and interpret adverse changes in a structure. One of the critical challenges for practical implementation of SHM system is the ability to detect damage under changing environmental conditions. This paper aims to characterize the temperature, load and damage effects in the sensor measurements obtained with piezoelectric transducer (PZT) patches. Data sets are collected on thin aluminum specimens under different environmental conditions and artificially induced damage states. The fuzzy clustering algorithm is used to organize the sensor measurements into a set of clusters, which can attribute the variation in sensor data due to temperature, load or any induced damage.

Structural Health Monitoring in Smart Structures Through Time Series Analysis

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Synthesis, optical and ferroelectric properties of PZT thin films: experimental and theoretical investigation

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Effect of strontium addition on ferroelectric phase transition of PZT thin films prepared by chemical route

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

A New Impedance Measurement System for PZT-Based Structural Health Monitoring

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Transducer Loading Effect on the Performance of PZT-Based SHM Systems

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Optimal Frequency Range Selection for PZT Transducers in Impedance-Based SHM Systems

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Real-time multi-sensors measurement system with temperature effects compensation for impedance-based structural health monitoring

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Effects of crystallization conditions on dielectric and ferroelectric properties of PZT thin films

This paper reports studies on dielectric and ferroelectric properties of lead zirconate titanate (PZT) thin films crystallized by conventional thermal annealing (CTA) and rapid thermal annealing (RTA) in air, oxygen and nitrogen atmospheres to better understand, control and optimize these properties. The dielectric constant (epsilon) and dissipation factor (tan delta) values, at a frequency of 100 kHz; for film crystallized in air by CTA process, were 358 and 0.039, respectively. Considering the same frequency for film crystallized in air by RTA, these values were 611 and 0.026, respectively. The different dielectric values were justified by a space-charge or interfacial polarization in films, often characterized as Maxwell-Wagner type. This effect was also responsible to dispersion at frequencies above 1 MHz in film crystallized in air by CTA process and film crystallized by RTA in oxygen atmosphere. The film crystallized by RTA under nitrogen atmosphere presented an evident dispersion at frequencies around 100 Hz, characterized by an increase in both epsilon and tan delta. This dispersion was attributed to conductivity effects. The remanent polarization (P-r) and coercive field (E-c) were also obtained for all films. Films obtained from RTA in air presented higher P-r (17.8 muC cm(-2)) than film crystallized from CTA (7.8 muC cm(-2)). As a function of the crystallization atmospheres, films crystallized by RTA in air and nitrogen presented essentially the same P-r values (around 18 muC cm(-2)) but the P-r (3.9 muC cm(-2)) obtained from film crystallized under oxygen atmosphere was profoundly influenced.

DC Electric Field Dependence of the Dielectric Constant of Pzt Thin Films Prepared by Polymeric Precursor Method

This work reports dielectric measurements performed on Pb(Zr0.53Ti0.47)O3 (PZT) thin films prepared by a polymeric precursor method. The -E curves obtained for the PZT film measured at 100 kHz, under a small ac 0.2 kV/cm signal-test and a dc scan featured a typical butterfly curve. However, the -E curves obtained for PZT film under a dc scan, with a scan rate of 0.003 V/s, shows a pronounced asymmetry. The absence of a symmetric secondary peak in -E curves could be an indication of essentially 180 domain switching.

PZT FOR MEASURING ENERGY FLUENCE RATE of X-RAY USED IN SUPERFICIAL CANCER THERAPY

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Piezo and Dielectric Properties of PHB-PZT Composite

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Síntese e caracterização da cerâmica PZT dopada com íons bário

Pós de titanato zirconato de chumbo (PZT) puros e dopados com bário foram obtidos pelo método de precursores poliméricos, conformados uniaxialmente, na forma de cilindros, utilizando 15 MPa, e prensados isostaticamente à 210MPa. Com o objetivo de estudar o comportamento de sinterização os compactos foram divididos em dois lotes. Sendo um sinterizado em um forno acoplado a um dilatômetro até a temperatura de 1300 °C e o outro sinterizado em forno tipo mufla, em sistema fechado, na temperatura de 1100 °C por 4 horas. Verificou-se que a adição do íon bário influencia na cinética de sinterização, na densificação final, na microestrutura e nas propriedades elétricas da cerâmica. A adição de bário aumenta a concentração da fase tetragonal no PZT, em função da substituição do chumbo por bário na rede perovskita. As amostras dopadas com concentrações maiores que 5,0 mol % em bário apresentaram segregação de PbO no contorno de grão, inibindo seu crescimento.

Photoluminescence properties of PZT 52/48 synthesized by microwave hydrothermal method using PVA with template

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)