Análise das avaliações realizadas na disciplina de arquitetura atômica e molecular no curso de química, modalidade a distância da UFRN

The field of education is very rich and allows us to research in various aspects. The area of chemical education has been growing more and more, and an important aspect that has been researching this area is about the learning difficulties of students. The approach of the themes atomic structure and chemical bonds are developed in high school and have many problems that are often brought to higher education becoming an obstacle to the advancement of learning. It is necessary for these initial themes - the atomic structure and chemical bonds - are well understood by the student to the other contents of Chemistry will be understood more easily. This paper aims to describe, analyze errors and difficulties presented in the assessments of the discipline Atomic and Molecular Architecture, the students of the degree course in Chemistry - EAD, with respect to the contents of " Atomic Structure and Chemical Bonding ", by of the assessments made by the students and the Virtual Learning Environment (VLE), taking into account the activities , discussion forum and access to materials . AVA allows obtaining reports which were used to analyze regarding access / participation to assess their contribution to learning and its relation to the final result (pass / fail). It was observed that the most frequent errors in the assessments are related to the early part of the chemistry that is the understanding of atomic structure and evolution models. Students who accessed the extra material and participated in the activities and forums were students who achieved success in the course. Ie, the difficulties were emerging and the use of available teaching strategies, students could minimize such difficulties, making their performance in activities and assessments were better. Was also observed by attending the AVA, the discipline began with a large withdrawal from the page access as well as the frequency of face- evidence from observation in Listing presence of classroom assessments

Deposição de A/N por sputtering não reativo

In this work we deposit via non-reactive magnetron sputtering of radio-frequency nanofilmes of nitreto of aluminum(AlN). The nanofilms aluminum nitride are semiconductors materials with high thermal conductivity, high melting point, piezoelectricity and wide band gap (6, 2 eV) with hexagonal wurtzite crystal structure, belonging to the group of new materials called III-V nitrides in which together with the gallium nitride and indium nitride have attracted much interest because they have physical and chemical properties relevant to new technological applications, mainly in microelectronic and optoelectronic devices. Three groups were deposited with thicknesses nanofilms time dependent on two substrates (glass and silicon) at a temperature of 25 ° C. The nanofilms AlN were characterized using three techniques, X-ray diffraction, Raman spectroscopy and atomic force microscopy (AFM), examined the morphology of these. Through the analysis of X-rays get the thickness of each sample with its corresponding deposition rate. The analysis of X-rays also revealed that nanofilms are not crystalline, showing the amorphous character of the samples. The results obtained by the technique, atomic force microscopy (AFM) agree with those obtained using the technique of X-rays. Characterization by Raman spectroscopy revealed the existence of active modes characteristic of AlN in the samples