28 resultados para tungsten carbide cobalt

em Deakin Research Online - Australia


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Substitution reactions between multiwalled carbon nanotubes and silicon monoxide vapour have been investigated using transmission electron microscopy. Different reactions occurred inside the multiwalled nanotubes and on the nanotube external surfaces, resulting in the formation of silicon carbide nanowires with a core–shell structure. The substitution reaction process and end products are strongly affected by nanotube structures and a ball milling treatment of the starting materials.

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Boron carbide nanowires with uniform carbon nitride coating layers were synthesized on a silicon substrate using a simple thermal process. The structure and morphology of the as-synthesized nanowires were characterized using x-ray diffraction, scanning and transmission electron microscopy and electron energy loss spectroscopy. A correlation between the surface smoothness of the nanowire sidewalls and their lateral sizes has been observed and it is a consequence of the anisotropic formation of the coating layers. A growth mechanism is also proposed for these growth phenomena.

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Bi doping of SrFeO3d results in the formation of a structure with high symmetry and extraordinary electrochemical performance for Bi0.5Sr0.5FeO3-d, which is capable of competing effectively with the current Co-based cathode benchmark with additional advantages of lower thermal expansion and cost.

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Cobalt-free perovskite cathode with excellent oxygen reduction reaction (ORR) properties below 800 °C is a key material toward wide implementation of intermediate-temperature solid oxide fuel cells. This work reports the phase structure, microstructure and performance of such cathode based on the composite phases of triclinic Ba0.9Bi0.1FeO3-δ, cubic BaFeO3 and orthorhombic BaFe2O4 prepared by sol–gel route. The resultant barium ferrites composite cathode exhibits uniform particles, pores and elements distribution. In particular, favorable ORR properties of this cathode is demonstrated by very low interfacial resistance of only 0.036 and 0.072 Ω cm2 at 750 and 700 °C and maximum power density of 1295 and 840 mW cm−2 at 750 and 700 °C.