A comparative evaluation of the photocatalytic and optical properties of nanoparticulate ZnO synthesised by mechanochemical processing

In this study, mechanochemical processing has been used to manufacture a nanoparticulate powder of ZnO with a controlled particle size and minimal hard agglomeration. The suitability of this ZnO powder for use as either a photocatalyst or an optically transparent UV-filter was evaluated by comparing its optical and photocatalytic properties with those of three commercially available powders that were synthesised by chemical precipitation and flame pyrolysis. The ZnO powder synthesised by mechanochemical processing was found to exhibit high optical transparency and low photocatalytic activity per unit of surface area, which indicates that it is suitable for use in optically transparent UV-filters.

Direct synthesis, growth mechanism, and optical properties of 3D AlN nanostructures with urchin shapes

Aluminum nitride (AƖN) nanostructures have shown novel physical and chemical properties that are essential for technological applications. We report a vapor-solid growth of novel three-dimensional (3D) A1N urchin-like nanostmcture in DC arc plasma via the direct reaction between Al vapor and N₂ gas without any catalyst or template. The as-prepared 3D A1N nanostructures which have urchin-like shapes consist of numerous microdaggers with sharp tips and lengths of up to several micrometers and widths of 0.5-2 µm. A growth mechanism of A1N nanostructures with urchin shapes was suggested and explained in detail. The optical properties of the AƖN nanostructures with urchin shapes were also studied with photoluminescence spectrum, which reveals a broad emission, suggesting potential applications in electronic and optoelectronic nanodevices.

AlN nanostructures : tunable architectures and optical properties

Novel AlN nanostructures with tunable building units of the architectures have been successfully synthesized without any catalyst or template; the subsequent photoluminescence (PL) indicates that the optical properties of the AlN nanostructures can be adjusted by tuning the architectures.

Temperature-agile and structure-tunable optical properties of VO 2/Ag thin films

By integrating together VO2’s unique near-room-temperature (RT) semiconductor–metal (S–M) phase transition with a thin silver (Ag) layer’s plasmonic properties, VO2/Ag multilayers could present a much enhanced optical transmission change when increasing the temperature from RT to over VO2’s S–M phase-transition temperature. Changing VO2 and Ag layer thicknesses can also significantly tune their transmission and absorption properties, which could lead to a few useful designs in optoelectronic and energy-saving industries.

Single layer lead iodide : computational exploration of structural, electronic and optical properties, strain induced band modulation and the role of spin-orbital-coupling

Graphitic like layered materials exhibit intriguing electronic structures and thus the search for new types of two-dimensional (2D) monolayer materials is of great interest for developing novel nano-devices. By using density functional theory (DFT) method, here we for the first time investigate the structure, stability, electronic and optical properties of monolayer lead iodide (PbI2). The stability of PbI2 monolayer is first confirmed by phonon dispersion calculation. Compared to the calculation using generalized gradient approximation, screened hybrid functional and spin-orbit coupling effects can not only predicts an accurate bandgap (2.63 eV), but also the correct position of valence and conduction band edges. The biaxial strain can tune its bandgap size in a wide range from 1 eV to 3 eV, which can be understood by the strain induced uniformly change of electric field between Pb and I atomic layer. The calculated imaginary part of the dielectric function of 2D graphene/PbI2 van der Waals type hetero-structure shows significant red shift of absorption edge compared to that of a pure monolayer PbI2. Our findings highlight a new interesting 2D material with potential applications in nanoelectronics and optoelectronics.

The microstructure and properties of energetically deposited carbon nitride films

The intrinsic stress, film density and nitrogen content of carbon nitride (CNx) films deposited from a filtered cathodic vacuum arc were determined as a function of substrate bias, substrate temperature and nitrogen process pressure. Contour plots of the measurements show the deposition conditions required to produce the main structural forms of CNx including N-doped tetrahedral amorphous carbon (ta-C:N) and a variety of nitrogen containing graphitic carbons. The film with maximum nitrogen content (~ 30%) was deposited at room temperature with 1.0 mTorr N2 pressure and using an intermediate bias of - 400 V. Higher nitrogen pressure, higher bias and/or higher temperature promoted layering with substitutional nitrogen bonded into graphite-like sheets. As the deposition temperature exceeded 500 °C, the nitrogen content diminished regardless of nitrogen pressure, showing the meta-stability of the carbon-nitrogen bonding in the films. Hardness and ductility measurements revealed a diverse range of mechanical properties in the films, varying from hard ta-C:N (~ 50 GPa) to softer and highly ductile CN x which contained tangled graphite-like sheets. Through-film current-voltage characteristics showed that the conductance of the carbon nitride films increased with nitrogen content and substrate bias, consistent with the transition to more graphite-like films. © 2014 Elsevier B.V.