2 resultados para inter-layer dielectrics

em Deakin Research Online - Australia


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SiOx films have several advantages as an interlayer dielectric in electronic devices owing to the strong adhesion between SiOx and the substrate. In this study, the coating performance as a function of the N2O flow rate was evaluated by electrochemical impedance spectroscopy and potentiodynamic polarization tests in an undisturbed environment. In addition, the coatings were examined by atomic force microscopy and Fourier transform infrared reflection spectroscopy. The SiOx films on a stainless-steel substrate showed the highest coating performance at a N2O flow rate of 120 sccm. This was attributed to the films having the lowest porosity value among those examined as a result of the fragmentation of SiO and SiO2 bonds and the improved surface roughness.

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The interlaminar toughening of a carbon fibre reinforced composite by interleaving a thin layer (~20 microns) of poly(hydroxyether of bisphenol A) (phenoxy) nanofibres was explored in this work. Nanofibres, free of defect and averaging several hundred nanometres, were produced by electrospinning directly onto a pre-impregnated carbon fibre material (Toray G83C) at various concentrations between 0.5 wt % and 2 wt %. During curing at 150 °C, phenoxy diffuses through the epoxy resin to form a semi interpenetrating network with an inverse phase type of morphology where the epoxy became the co-continuous phase with a nodular morphology. This type of morphology improved the fracture toughness in mode I (opening failure) and mode II (in-plane shear failure) by up to 150% and 30%, respectively. Interlaminar shear stress test results showed that the interleaving did not negatively affect the effective in-plane strength of the composites. Furthermore, there was some evidence from DMTA and FT-IR analysis to suggest that inter-domain etherification between the residual epoxide groups with the pendant hydroxyl groups of the phenoxy occurred, also leading to an increase in glass transition temperature (~7.5 °C).