Influence of N2O flow rate on reliability of SiOx films deposited by SiH4-N2O gas mixture plasma
Data(s) |
01/01/2009
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Resumo |
SiO<sub>x</sub> films have several advantages as an interlayer dielectric in electronic devices owing to the strong adhesion between SiO<sub>x</sub> and the substrate. In this study, the coating performance as a function of the N<sub>2</sub>O flow rate was evaluated by electrochemical impedance spectroscopy and potentiodynamic polarization tests in an undisturbed environment. In addition, the coatings were examined by atomic force microscopy and Fourier transform infrared reflection spectroscopy. The SiO<sub>x</sub> films on a stainless-steel substrate showed the highest coating performance at a N<sub>2</sub>O flow rate of 120 sccm. This was attributed to the films having the lowest porosity value among those examined as a result of the fragmentation of SiO and SiO<sub>2</sub> bonds and the improved surface roughness. <br /> |
Identificador | |
Idioma(s) |
eng |
Publicador |
Institute of Pure and Applied Physics |
Relação |
http://dx.doi.org/10.1143/JJAP.48.08HJ01 |
Direitos |
2009, The Japan Society of Applied Physics |
Palavras-Chave | #coating performance #electronic device #fourier transform infrared #inter-layer dielectrics #potentiodynamic polarization tests |
Tipo |
Journal Article |