2 resultados para epitaxial growth

em Deakin Research Online - Australia


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The nanowire and whisker heterostructures of tin dioxide were fabricated by the chemical vapor deposition technique. It was demonstrated that various structures of tin oxide can be obtained by controlling the thickness of gold layer and the partial pressure of source vapor at growing sites. 12.5 and 25 nm thicknesses are preferable for the epitaxial growth of nanowires and heterostructure through vapor-liquid-solid mechanism, respectively. The tin dioxide whiskers with core-shell structure were fabricated by vapor-solid mechanism. Meanwhile, the influences of various factors on the tin dioxide growth are also discussed.

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Prismatic boron nitride nanorods have been grown on single crystal silicon substrates by mechanical ball-milling followed by annealing at 1300 °C. Growth takes place by rapid surface diffusion of BN molecules, and follows heterogeneous nucleation at catalytic particles of an Fe/Si alloy. Lattice imaging transmission electron microscopy studies reveal a central axial row of rather small truncated pyramidal nanovoids on each nanorod, surrounded by three basal planar BN domains which, with successive deposition of epitaxial layers adapt to the void geometry by crystallographic faceting. The bulk strain in the nanorods is taken up by the presence of what appear to be simple nanostacking faults in the external, near-surface domains which, like the nanovoids are regularly repetitive along the nanorod length. Growth terminates with a clear cuneiform tip for each nanorod. Lateral nanorod dimensions are essentially determined by the size of the catalytic particle, which remains as a foundation essentially responsible for base growth. Growth, structure, and dominating facets are shown to be consistent with a system which seeks lowest bulk and surface energies according to the well-known thermodynamics of the capillarity of solids.