Epitaxial growth of multi-structure sno2 by chemical vapor deposition


Autoria(s): He, Dong-Ning; Hodgson, Peter; Gao, Wei-Min
Data(s)

01/07/2015

Resumo

The nanowire and whisker heterostructures of tin dioxide were fabricated by the chemical vapor deposition technique. It was demonstrated that various structures of tin oxide can be obtained by controlling the thickness of gold layer and the partial pressure of source vapor at growing sites. 12.5 and 25 nm thicknesses are preferable for the epitaxial growth of nanowires and heterostructure through vapor-liquid-solid mechanism, respectively. The tin dioxide whiskers with core-shell structure were fabricated by vapor-solid mechanism. Meanwhile, the influences of various factors on the tin dioxide growth are also discussed.

Identificador

http://hdl.handle.net/10536/DRO/DU:30078083

Idioma(s)

eng

Publicador

Springer

Relação

http://dro.deakin.edu.au/eserv/DU:30078083/hodgson-epitaxialgrowth-2015.pdf

http://www.dx.doi.org/10.1007/s40195-015-0284-y

Direitos

2015, Springer

Palavras-Chave #Carbothermal method #Chemical vapor deposition #Heterostructure #Nanostructure #Tin dioxide #Science & Technology #Technology #Metallurgy & Metallurgical Engineering #OXIDE THIN-FILMS #TIN #NANOWIRES #COMPOSITES #PARAMETERS #EFFICIENCY #DESIGN #ARRAYS
Tipo

Journal Article