Corrosion properties of plasma-polymerized methylcyclohexane films using electrochemical methods

Three types of methylcyclohexane (MCH) coating were deposited as interlayer dielectrics on copper using plasma-enhanced chemical vapor deposition (PECVD) at three different RF plasma power levels. The coating performance was then evaluated by an electrochemical im pedance spectroscopy (EIS) and a potentiodynamic polarization test in 3.5 wt.% NaCl solution. An atomic force microscopy (AFM) and Fourier transform infrared reflection (FT-IR) spectroscopy were also conducted to analyze the coatings. The MCH coatings showed a lower corrosion rate than the copper substrate in the potentiodynamic tests. The EIS results showed that the corrosion resistance of the coatings increased with an increasing plasma power. Thus, the MCH films with an increasing plasma power improved the corrosion resistance due to the formation of a low-porosity coating, the enhanced formation of C−H, C−C, and C≡C stretching configurations, and the improved smooth surfaces.

Influence of N2O flow rate on reliability of SiOx films deposited by SiH4-N2O gas mixture plasma

SiO_x films have several advantages as an interlayer dielectric in electronic devices owing to the strong adhesion between SiO_x and the substrate. In this study, the coating performance as a function of the N₂O flow rate was evaluated by electrochemical impedance spectroscopy and potentiodynamic polarization tests in an undisturbed environment. In addition, the coatings were examined by atomic force microscopy and Fourier transform infrared reflection spectroscopy. The SiO_x films on a stainless-steel substrate showed the highest coating performance at a N₂O flow rate of 120 sccm. This was attributed to the films having the lowest porosity value among those examined as a result of the fragmentation of SiO and SiO₂ bonds and the improved surface roughness.