Design and simulation of a low voltage wide band RF MEMS switch

This paper presents design of an electrostatic wide band shunt capacitive coupling RF MEMS switch with low actuation voltage. The key factors of the RF MEMS switch design are the proper scattering parameters, low actuation voltage, and the cost of the fabrication process. An overview of the recent low actuation voltage RFMEMS switches has been presented. These designs still suffer from the complexity of process, lack of reliability, limitation of frequency band, and process cost. RF characteristics of a shunt RF MEMS switches are specified mostly by coupling capacitor in upstate position of the membrane Cu. This capacitor is in trade-off with actuation voltage. In this work, the capacitor is eliminated by using two short high impedance transmission lines, at the input and output of the switch. The simulation results demonstrate an improvement in the RF characteristic of the switch.

Design and simulation of a RF MEMS shunt switch for Ka and V bands and the impact of varying its geometrical parameters

RF MEMS plays an important role in microwave switching. The high performance of RF MEMS shunt such as high bandwidth, low insertion loss, and high isolation have made these switches well suitable for high performing microwave and millimeter wave circuits. This paper presents a RF MEMS shunt capacitive switch for Ka and V band application. This paper investigates the effect of various geometrical parameters on RF characteristics of the switch. The simulation results are presented and discussed.

Determining RF MEMS switch parameter by neural networks

A challenge in designing a RF MEMS switch is the determination of its parameters to satisfy the application requirements. Often this is done through a set of comprehensive time consuming simulations. This paper employs neural networks and develops a supervised learner that is capable of determining S11 parameter for a RF MEMS shunt switch. The inputs are the length its L and the height of its gap. The outputs are S11s for eight different frequency points from 0 to V band. The developed learner helps prevent repetitive simulations when designing the specified switch. Simulation results are presented.

Review of low actuation voltage RF MEMS electrostatic switches based on metallic and carbon alloys

Radio frequency micro electro mechanical systems (RF MEMS) have enabled a new generation of devices that bring many advantages due to their very high performances. There are many incentives for the integration of the RF MEMS switches and electronic devices on the same chip. However, the high actuation voltage of RF MEMS switches compared to electronic devices poses a major problem. By reducing the actuation voltage of the RF MEMS switch, it is possible to integrate it into current electronic devices. Lowering the actuation voltage will have an impact on RF parameters of the RF MEMS switches. This investigation focuses on recent progress in reducing the actuation voltage with an emphasis on a modular approach that gives acceptable design parameters. A number of rules that should be considered in design and fabrication of low actuation RF MEMS switches are suggested.

Impact of carbon material on RF MEMS switch

Carbon materials such as Graphene and carbon nano tube promise a new generation of RF NEMS devices that bring many advantages due to their very high performances such as low mass, high Young's modulus and electrical conductivity. In this paper, the properties of Graphene for RF M/NEMS applications are briefly described. We compare the mechanical behaviour of Graphene switches with metallic RF MEMS switches such as Aluminium and Gold. The analytical study and simulation results show that the actuation voltage of Al and Au switches is high (35 V) whereas the actuation voltage for the Graphene switch is low (7.7 V). Also, the switching time of Graphene switch is 3.5 ns while the switching time for metallic switches is approximately 17μs.

RF techniques for lowering the actuation voltage of RF MEMS shunt capacitor switch for C-K band

Increasing the capacitance ratio in RF MEMS shunt capacitive switch will increase its RF performance but also raise its actuation voltage. To improve the RF performance of the switch without increasing its capacitance ratio, this paper explores two methods: reducing the LC resonance from the mm-wave into the X-band by using an inductive bridge, and using two short high impedance transmission lines at both ends of the CPW line. Accordingly, this paper presents the design and simulation of an electro-static low actuation voltage and a very high isolation multipurpose switch with a very large bandwidth. The simulation results are presented and discussed.

Design and simulation of a high isolation RF MEMS shunt capacitive switch for C-K band

This paper presents a wide band RF MEMS capacitive switch. The LC resonant frequency is reduced from mm wave to X band frequencies at down-state by using a meander type membrane, with the frequency band is being increased by adding two short high impedance lines at both ends of coplanar waveguide (CPW). Moreover, this acts as T-match circuit in up-state position and improves the matching. Simulation results demonstrate that the capacitance ratio reduces from 50 to 21.4, S21 and S11 are less than −10dB for the entire frequency band at down-state and up-state. Also, a comprehensive and complete electric model of the switch is proposed and simulation results agree well with the characteristics of the physical structure of the MEMS switch. Vpull-in and Vpull-out of this switch are 8.1V and 0.3V, respectively.

RF rectifiers for EM power harvesting in a deep brain stimulating device

A passive deep brain stimulation (DBS) device can be equipped with a rectenna, consisting of an antenna and a rectifier, to harvest energy from electromagnetic fields for its operation. This paper presents optimization of radio frequency rectifier circuits for wireless energy harvesting in a passive head-mountable DBS device. The aim is to achieve a compact size, high conversion efficiency, and high output voltage rectifier. Four different rectifiers based on the Delon doubler, Greinacher voltage tripler, Delon voltage quadrupler, and 2-stage charge pumped architectures are designed, simulated, fabricated, and evaluated. The design and simulation are conducted using Agilent Genesys at operating frequency of 915 MHz. A dielectric substrate of FR-4 with thickness of 1.6 mm, and surface mount devices (SMD) components are used to fabricate the designed rectifiers. The performance of the fabricated rectifiers is evaluated using a 915 MHz radio frequency (RF) energy source. The maximum measured conversion efficiency of the Delon doubler, Greinacher tripler, Delon quadrupler, and 2-stage charge pumped rectifiers are 78, 75, 73, and 76 % at -5 dBm input power and for load resistances of 5-15 kΩ. The conversion efficiency of the rectifiers decreases significantly with the increase in the input power level. The Delon doubler rectifier provides the highest efficiency at both -5 and 5 dBm input power levels, whereas the Delon quadrupler rectifier gives the lowest efficiency for the same inputs. By considering both efficiency and DC output voltage, the charge pump rectifier outperforms the other three rectifiers. Accordingly, the optimised 2-stage charge pumped rectifier is used together with an antenna to harvest energy in our DBS device.

Rectenna circuits for RF energy harvesting in miniature DBS devices.

 Development of an optimum rectenna for radio frequency energy harvesting in miniature head-mountable deep brain stimulation (DBS) devices. The designed miniature rectenna can operate a DBS device without battery for murine preclinical research. The battery-less operation of the device eliminates battery related difficulties.