6 resultados para reverse bias
em Cochin University of Science
Resumo:
A new design for a compact electronically reconffgurable singlefeed dual frequency dual-polarized operation of a square-microstrip antenna capable of achieving tunable frequency ratios in the range 1.1 to 1.37 is proposed and experimentally studied. Varactor diodes inlegruted with the arms of the hexagonal slot and embedded in the square patch are used to tune the operating frequencies by applying reverse-bias voltage. The design has the advantage of size reduction up to 73.21% and 49.86% for the two resonant frequencies, respectively, as compared to standard rectangular patches. The antenna offers good bandwidth of 5.74% and 5.36% for the two operating frequencies. A highly simplified tuning circuitry without any transmission lines adds to the compactness of the design
Resumo:
We have numerically studied the behavior of a two-mode Nd-YAG laser with an intracavity KTP crystal. It is found that when the parameter, which is a measure of the relative orientations of the KTP crystal with respect to the Nd-YAG crystal, is varied continuously, the output intensity fluctuations change from chaotic to stable behavior through a sequence of reverse period doubling bifurcations. The graph of the intensity in the X-polarized mode against that in the Y-polarized mode shows a complex pattern in the chaotic regime. The Lyapunov exponent is calculated for the chaotic and periodic regions.
Resumo:
The effect of coupling on two high frequency modulated semiconductor lasers is numerically studied. The phase diagrams and bifurcatio.n diagrams are drawn. As the coupling constant is increased the system goes from chaotic to periodic behavior through a reverse period doubling sequence. The Lyapunov exponent is calculated to characterize chaotic and periodic regions.
Resumo:
The magnetic properties of amorphous Fe–Ni–B based metallic glass nanostructures were investigated. The nanostructures underwent a spin-glass transition at temperatures below 100 K and revealed an irreversible temperature following the linear de Almeida–Thouless dependence. When the nanostructures were cooled below 25 K in a magnetic field, they exhibited an exchange bias effect with enhanced coercivity. The observed onset of exchange bias is associated with the coexistence of the spin-glass phase along with the appearance of another spin-glass phase formed by oxidation of the structurally disordered surface layer, displaying a distinct training effect and cooling field dependence. The latter showed a maximum in exchange bias field and coercivity, which is probably due to competing multiple equivalent spin configurations at the boundary between the two spin-glass phases
Resumo:
The major problem of the engineering entrance examination is the exclusion of certain sections of the society in social, economic, regional and gender dimensions. This has seldom been taken for analysis towards policy correction. To lessen this problem a minor policy shift was prepared in the year 2011 with a 50–50 proportion in academic marks and entrance marks. The impact of this change is yet to be scrutinized. The data for the study is obtained from the Nodal Centre of Kerala functioning at Cochin University of Science and Technology under the National Technical Manpower Information System and also estimated from the Centralized Allotment Process. The article focuses on two aspects of exclusion based on engineering entrance examination; gender centred as well as caste-linked. Rank order spectral density and Lorenz ratio are used to cognize the exclusion and inequality in community and gender levels in various performance scales. The article unfolds the fact that social status in society coupled with economic affordability to quality education seems to have significant influence in the performance of students in the Kerala engineering entrance examinations. But it also shows that there is wide gender disparity with respect to performance in the high ranking levels irrespective of social groups
Resumo:
b-In2S3 thin filmsweredepositedonIndiumTinOxidesubstratesusingtheChemical SprayPyrolysistechnique.Metalcontactwasdepositedoverthe b-In2S3 thin filmto formahetero-structureofthetypeITO/b-In2S3/Metal.Theintensityoftwophoto- luminescenceemissionsfromthe b-In2S3 thin film,centeredat520and690nmcould be variedbytheapplicationofanexternalbiasvoltagetothishetero-structure.The emissionscouldbeswitchedonoroffdependinguponthemagnitudeoftheexternal appliedbiasvoltage.Thusthepresenceoftwoconductingstatesinthishetero-structure could beidentified.Thetemporalvariationinintensityofthephotoluminescence emissionwiththeapplicationofthebiasvoltagehasalsobeenstudied.Thecondition underwhichphotoluminescencequenchingoccurshasbeenrepresentedbyafirst order differentialequationbetweendiffusionlengthandcarrierconcentration