An efficient scheme for the evaluation of coding performance of high speed links incorporating joint error behaviour based on Monte Carlo Method

While channel coding is a standard method of improving a system’s energy efficiency in digital communications, its practice does not extend to high-speed links. Increasing demands in network speeds are placing a large burden on the energy efficiency of high-speed links and render the benefit of channel coding for these systems a timely subject. The low error rates of interest and the presence of residual intersymbol interference (ISI) caused by hardware constraints impede the analysis and simulation of coded high-speed links. Focusing on the residual ISI and combined noise as the dominant error mechanisms, this paper analyses error correlation through concepts of error region, channel signature, and correlation distance. This framework provides a deeper insight into joint error behaviours in high-speed links, extends the range of statistical simulation for coded high-speed links, and provides a case against the use of biased Monte Carlo methods in this setting

Low k thin films based on rf plasma-polymerized aniline

Thermally stable materials with low dielectric constant (k < 3.9) are being hotly pursued. They are essential as interlayer dielectrics/intermetal dielectrics in integrated circuit technology, which reduces parasitic capacitance and decreases the RC time constant. Most of the currently employed materials are based on silicon. Low k films based on organic polymers are supposed to be a viable alternative as they are easily processable and can be synthesized with simpler techniques. It is known that the employment of ac/rf plasma polymerization yields good quality organic thin films, which are homogenous, pinhole free and thermally stable. These polymer thin films are potential candidates for fabricating Schottky devices, storage batteries, LEDs, sensors, super capacitors and for EMI shielding. Recently, great efforts have been made in finding alternative methods to prepare low dielectric constant thin films in place of silicon-based materials. Polyaniline thin films were prepared by employing an rf plasma polymerization technique. Capacitance, dielectric loss, dielectric constant and ac conductivity were evaluated in the frequency range 100 Hz– 1 MHz. Capacitance and dielectric loss decrease with increase of frequency and increase with increase of temperature. This type of behaviour was found to be in good agreement with an existing model. The ac conductivity was calculated from the observed dielectric constant and is explained based on the Austin–Mott model for hopping conduction. These films exhibit low dielectric constant values, which are stable over a wide range of frequencies and are probable candidates for low k applications.