8 resultados para THRESHOLD-CURRENT-DENSITY

em Cochin University of Science


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National Institute for Interdisciplinary Science and Technology

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The application vistas of superconductors have widened very much since the discovery of high TC superconductors (HTS) as many of the applications can be realised at 77 K rather than going down to 4.2 K, the liquid He temperature. One such application is the HTS current lead which is used to connect a superconducting system with a room temperature power source. Minimising heat leak to the cryogenic environment is the main advantage of introducing current leads into superconducting systems. The properties of HTSS likes zero resistance (avoiding joule heating) and very low thermal conductivity (minimized conductive heat transfer) make them ideal candidates to be used as current leads. There are two forms of HTS current leads. (i) bulk form (tube or rod) prepared either from YBCO or BSCCO and (ii) tape form prepared from Bi-2223 multifilamentary tapes. The tape form of current leads has many advantages with respect to the mechanical and thermal stability related criteria. Crucial information on various aspects of HTS current lead development are not available in the literature as those are kept proprietary by various companies around the world. The present work has been undertaken to tailor the properties of multifilamentary tapes for the current lead application and to optimise the processing parameters of the same for enhanced critical current density and field tolerance. Also it is the aim of the present investigation is to prepare prototype current leads engineered for operation in conduction cooled mode and test them for operational stability

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It is important that long superconducting tape must have desired strain tolerance (less reduction of Jc with applied strains) and stress tolerance (less reduction of JC in applied stresses) for its use as coils and magnets. Ag addition to the BPSCCO system has many advantages with its physical and chemical inertness to the system, reduces the processing temperature, and promotes the grain growth, grain alignment and connectivity. All these not only enhance the critical current density of the tapes but also improve the mechanical properties. But the published results show very much scattering on the type of Ag additive to be selected, method of addition and its optimum percentage. Also there are some negative reports in this regard. The present work has been undertaken to study the effect of silver addition in different forms (Ag powder, Ag2O, AgNO3) on the superconducting and mechanical properties of (Bi,Pb)-2223/Ag tapes and to find out a suitable form of Ag additive and its optimum percentage to have better superconducting and mechanical properties. Also it is the aim of the present work is to optimise the process parameters needed to prepare (Bi,Pb)-2223/Ag multifilamentary tapes of length ~ 12 m in solenoid and pancake coil forms with good critical current density and homogeneity of J C along the length of the tapes.

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Thin film solar cells having structure CuInS2/In2S3 were fabricated using chemical spray pyrolysis (CSP) technique over ITO coated glass. Top electrode was silver film (area 0.05 cm2). Cu/In ratio and S/Cu in the precursor solution for CuInS2 were fixed as 1.2 and 5 respectively. In/S ratio in the precursor solution for In2S3 was fixed as 1.2/8. An efficiency of 0.6% (fill factor -37.6%) was obtained. Cu diffusion to the In2S3 layer, which deteriorates junction properties, is inevitable in CuInS2/In2S3 cell. So to decrease this effect and to ensure a Cu-free In2S3 layer at the top of the cell, Cu/In ratio was reduced to 1. Then a remarkable increase in short circuit current density was occurred from 3 mA/cm2 to 14.8 mA/cm2 and an efficiency of 2.13% was achieved. Also when In/S ratio was altered to 1.2/12, the short circuit current density increased to 17.8 mA/cm2 with an improved fill factor of 32% and efficiency remaining as 2%. Thus Cu/In and In/S ratios in the precursor solutions play a crucial role in determining the cell parameters

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The optical and carrier transport properties of amorphous transparent zinc indium tin oxide (ZITO)(a-ZITO) thin films and the characteristics of the thin-film transistors TFTs were examined as a function of chemical composition. The as-deposited films were very conductive and showed clear free carrier absorption FCA . The analysis of the FCA gave the effective mass value of 0.53 me and a momentum relaxation time of 3.9 fs for an a-ZITO film with Zn:In:Sn = 0.35:0.35:0.3. TFTs with the as-deposited channels did not show current modulation due to the high carrier density in the channels. Thermal annealing at 300°C decreased the carrier density and TFTs fabricated with the annealed channels operated with positive threshold voltages VT when Zn contents were 25 atom % or larger. VT shifted to larger negative values, and subthreshold voltage swing increased with decreasing the Zn content, while large on–off current ratios 107–108 were kept for all the Zn contents. The field effect mobilities ranged from 12.4 to 3.4 cm2 V−1 s−1 for the TFTs with Zn contents varying from 5 to 48 atom %. The role of Zn content is also discussed in relation to the carrier transport properties and amorphous structures.

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A pulsed Nd-YAG laser beam is used to produce a transient refractive index gradient in air adjoining the plane surface of the sample material. This refractive index gradient is probed by a continuous He-Ne laser beam propagating parallel to the sample surface. The observed deflection signals produced by the probe beam exhibit drastic variations when the pump laser energy density crosses the damage threshold for the sample. The measurements are used to estimate the damage threshold for a few polymer samples. The present values are found to be in good agreement with those determined by other methods.

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Laser‐induced damage and ablation thresholds of bulk superconducting samples of Bi2(SrCa)xCu3Oy(x=2, 2.2, 2.6, 2.8, 3) and Bi1.6 (Pb)xSr2Ca2Cu3 Oy (x=0, 0.1, 0.2, 0.3, 0.4) for irradiation with a 1.06 μm beam from a Nd‐YAG laser have been determined as a function of x by the pulsed photothermal deflection technique. The threshold values of power density for ablation as well as damage are found to increase with increasing values of x in both systems while in the Pb‐doped system the threshold values decrease above a specific value of x, coinciding with the point at which the Tc also begins to fall.  

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Irradiation of a Polymethyl methacrylate target using a pulsed Nd-YAG laser causes plasma formation in the vicinity of the target. The refractive index gradient due to the presence of the plasma is probed using phase-shift detection technique. The phase-shift technique is a simple but sensitive technique for the determination of laser ablation threshold of solids. The number density of laser generated plasma above the ablation threshold from Polymethyl methacrylate is calculated as a function of laser fluence. The number density varies from 2×1016 cm-3 to 2×1017 cm-3 in the fluence interval 2.8-13 J · cm-2.