Determination of charge carrier transport in radio frequency plasma polymerized aniline thin films

The carrier transport mechanism of polyaniline (PA) thin films prepared by radio frequency plasma polymerization is described in this paper. The mechanism of electrical conduction and carrier mobility of PA thin films for different temperatures were examined using the aluminium–PA–aluminium (Al–PA–Al) structure. It is found that the mechanism of carrier transport in these thin films is space charge limited conduction. J –V studies on an asymmetric electrode configuration using indium tin oxide (ITO) as the base electrode and Al as the upper electrode (ITO–PA–Al structure) show a diode-like behaviour with a considerable rectification ratio

Non-destructive evaluation of carrier transport properties in CuInS2 and CuInSe2 thin films using photothermal deflection technique

Photothermal deflection technique (PTD) is a non-destructive tool for measuring the temperature distribution in and around a sample, due to various non-radiative decay processes occurring within the material. This tool was used to measure the carrier transport properties of CuInS2 and CuInSe2 thin films. Films with thickness <1 μm were prepared with different Cu/In ratios to vary the electrical properties. The surface recombination velocity was least for Cu-rich films (5×105 cm/s for CuInS2, 1×103 cm/s for CuInSe2), while stoichiometric films exhibited high mobility (0.6 cm2/V s for CuInS2, 32 cm2/V s for CuInSe2) and high minority carrier lifetime (0.35 μs for CuInS2, 12 μs for CuInSe2

Optical and Carrier Transport Properties of Cosputtered Zn–In–Sn–O Films and Their Applications to TFTs

The optical and carrier transport properties of amorphous transparent zinc indium tin oxide (ZITO)(a-ZITO) thin films and the characteristics of the thin-film transistors TFTs were examined as a function of chemical composition. The as-deposited films were very conductive and showed clear free carrier absorption FCA . The analysis of the FCA gave the effective mass value of 0.53 me and a momentum relaxation time of 3.9 fs for an a-ZITO film with Zn:In:Sn = 0.35:0.35:0.3. TFTs with the as-deposited channels did not show current modulation due to the high carrier density in the channels. Thermal annealing at 300°C decreased the carrier density and TFTs fabricated with the annealed channels operated with positive threshold voltages VT when Zn contents were 25 atom % or larger. VT shifted to larger negative values, and subthreshold voltage swing increased with decreasing the Zn content, while large on–off current ratios 107–108 were kept for all the Zn contents. The field effect mobilities ranged from 12.4 to 3.4 cm2 V−1 s−1 for the TFTs with Zn contents varying from 5 to 48 atom %. The role of Zn content is also discussed in relation to the carrier transport properties and amorphous structures.

Optical and electrical properties of amorphous zinc tin oxide thin films examined for thin film transistor application

Structural, electronic, and optical properties of amorphous and transparent zinc tin oxide films deposited on glass substrates by pulsed laser deposition (PLD) were examined for two chemical compositions of Zn:Sn=1:1 and 2:1 as a function of oxygen partial pressure PO2 used for the film deposition and annealing temperature. Different from a previous report on sputter-deposited films Chiang et al., Appl. Phys. Lett. 86, 013503 2005 , the PLD-deposited films crystallized at a lower temperature 450 °C to give crystalline ZnO and SnO2 phases. The optical band gaps Tauc gaps were 2.80−2.85 eV and almost independent of oxygen PO2 , which are smaller than those of the corresponding crystals 3.35−3.89 eV . Films deposited at low PO2 showed significant subgap absorptions, which were reduced by postthermal annealing. Hall mobility showed steep increases when carrier concentration exceeded threshold values and the threshold value depended on the film chemical composition. The films deposited at low PO2 2 Pa had low carrier concentrations. It is thought that the low PO2 produced high-density oxygen deficiencies and generated electrons, but these electrons were trapped in localized states, which would be observed as the subgap absorptions. Similar effects were observed for 600 °C crystallized films and their resistivities were increased by formation of subgap states due to the reducing high-temperature condition. High carrier concentrations and large mobilities were obtained in an intermediate PO2 region for the as-deposited films.

Optical and electrical properties of co-sputtered amorphous transparent conducting zinc indium tin oxide thin films

Highly conductive and transparent thin films of amorphous zinc indium tin oxide are prepared at room temperature by co-sputtering of zinc 10 oxide and indium tin oxide. Cationic contents in the films are varied by adjusting the power to the sputtering targets. Optical transmission study of 11 films showed an average transmission greater than 85% across the visible region. Maximum conductivity of 6×102 S cm−1 is obtained for Zn/In/ 12 Sn atomic ratio 0.4/0.4/0.2 in the film. Hall mobility strongly depends on carrier concentration and maximum mobility obtained is 18 cm2 V−1 s−1 13 at a carrier concentration of 2.1×1020 cm−3. Optical band gap of films varied from 3.44 eV to 3 eV with the increase of zinc content in the film 14 while the refractive index of the films at 600 nm is about 2.0.

Land Transfers and Peasant Mobility

It is hoped that the present study by analysing the dynamics of agrarian change and peasant mobility may contribute to the on-going debate on this issue in India and other developing countries. It may also help to throw light on the validity of some of the theories formulated on the basis of experience in different regions and at different times. The study is likely to be of special importance as it covers an area which has one of the highest densities of population. The area has also witnessed sweeping changes in agrarian structure as a result of the most radical land reforms among the Indian states.

Thermal transport, photoconduction and electrical switching in selected chalcogenide glasses exhibiting carrier type reversal

Department of Instrumentation, Cochin University of Science and Technology

Photothermal beam deflection for non-destructive evaluation of semiconductor thin films

Non-destructive testing (NDT) is the use of non-invasive techniques to determine the integrity of a material, component, or structure. Engineers and scientists use NDT in a variety of applications, including medical imaging, materials analysis, and process control.Photothermal beam deflection technique is one of the most promising NDT technologies. Tremendous R&D effort has been made for improving the efficiency and simplicity of this technique. It is a popular technique because it can probe surfaces irrespective of the size of the sample and its surroundings. This technique has been used to characterize several semiconductor materials, because of its non-destructive and non-contact evaluation strategy. Its application further extends to analysis of wide variety of materials. Instrumentation of a NDT technique is very crucial for any material analysis. Chapter two explores the various excitation sources, source modulation techniques, detection and signal processing schemes currently practised. The features of the experimental arrangement including the steps for alignment, automation, data acquisition and data analysis are explained giving due importance to details.Theoretical studies form the backbone of photothermal techniques. The outcome of a theoretical work is the foundation of an application.The reliability of the theoretical model developed and used is proven from the studies done on crystalline.The technique is applied for analysis of transport properties such as thermal diffusivity, mobility, surface recombination velocity and minority carrier life time of the material and thermal imaging of solar cell absorber layer materials like CuInS2, CuInSe2 and SnS thin films.analysis of In2S3 thin films, which are used as buffer layer material in solar cells. The various influences of film composition, chlorine and silver incorporation in this material is brought out from the measurement of transport properties and analysis of sub band gap levels.The application of photothermal deflection technique for characterization of solar cells is a relatively new area that requires considerable attention.The application of photothermal deflection technique for characterization of solar cells is a relatively new area that requires considerable attention. Chapter six thus elucidates the theoretical aspects of application of photothermal techniques for solar cell analysis. The experimental design and method for determination of solar cell efficiency, optimum load resistance and series resistance with results from the analysis of CuInS2/In2S3 based solar cell forms the skeleton of this chapter.

Investigations on the mechanism of carrier transport in plasma polymerized pyrrole thin films

Plasma polymerization is found to be an excellent technique for the preparation of good quality, pinhole-free, polymer thin films from different monomer precursors. The present work describes the preparation and characterization of polypyrrole (PPy) thin films by ac plasma polymerization technique in their pristine and in situ iodine doped forms. The electrical conductivity studies of the aluminiumpolymeraluminium (AlpolymerAl) structures have been carried out and a space charge limited conduction (SCLC) mechanism is identified as the most probable mechanism of carrier transport in these polymer films. The electrical conductivity shows an enhanced value in the iodine doped sample. The reduction of optical band gap by iodine doping is correlated with the observed conductivity results.

Nutrient Mobility in Chalakudy River,Typified With Riparian Buffer Zone and Its Adjoining Estuary:Spatiotemporal Manifestation

This study was aimed at to characterize the spatio-temporal trends in the distributional characteristics of various species of nitrogen and phosphorus as well as to elucidate the factors and processes aflecting these nutrients in the dissolved, particulate and sedimentary phases of a river estuarine system. The main area of study is Chalakudy river in Kerala, which is a fresh water system originating from Anamalai hills and ending at Arabian Sea. Its basin is between I00 05 ’ to I00 35’ North latitude and 76” 15 ’ to 760 55’ East longitude. Being a riparian bufler zone, the dynamics of nutrient mobility tend to be more complex and variable in this river-estuarine system.The diflerent species of nitrogen estimated from the filtrate were nitrite-N, nitrateN, ammonia-N, urea-N, total nitrogen and residual nitrogen. The diflerent forms of phosphorus estimated from the filtrate were phosphate-P, total-P and residualP. Pre weighed sediments as well as particulate matter were analysed for quantijying nitrite-N, nitrate-N, ammonia-N and urea-N. Total nitrogen was estimated after digestion with potassium persulfate. Fractionation of phosphorus in sediment/particulate matter was performed by applying sequential extraction procedure. The dijferent forms of phosphorus thus estimated were loosely bound (exchangeable) P, Fe/Al bound P, polyphosphates, Ca bound P and refractory P. Sedimental total P was also measured directly by applying digestion method.The analyses carried out in this bimonthly annual survey have revealed specific information on the latent factors influencing the water quality pattern ofthe river. There was dependence among the chemical components of the river sediment and suspended matter, reflecting the water quality. A period of profound environmental change occurred and changes in various species had been noted in association with seasonal variations in the waterway, especially following enhanced river runoff during the monsoon. The results also successfully represented the distribution trend of nutrients during the rainy as well as dry season. Thus, the information gathered in this work will also be beneficial for those interested or involved in river management, conservation, regulation and policy making in regional and national levels.

Mobility Metric based LEACH-Mobile Protocol

Cluster based protocols like LEACH were found best suited for routing in wireless sensor networks. In mobility centric environments some improvements were suggested in the basic scheme. LEACH-Mobile is one such protocol. The basic LEACH protocol is improved in the mobile scenario by ensuring whether a sensor node is able to communicate with its cluster head. Since all the nodes, including cluster head is moving it will be better to elect a node as cluster head which is having less mobility related to its neighbours. In this paper, LEACH-Mobile protocol has been enhanced based on a mobility metric “remoteness” for cluster head election. This ensures high success rate in data transfer between the cluster head and the collector nodes even though nodes are moving. We have simulated and compared our LEACH-Mobile-Enhanced protocol with LEACHMobile. Results show that inclusion of neighbouring node information improves the routing protocol.

Routing protocol enhancement for handling node mobility in wireless sensor networks

In wireless sensor networks, the routing algorithms currently available assume that the sensor nodes are stationary. Therefore when mobility modulation is applied to the wireless sensor networks, most of the current routing algorithms suffer from performance degradation. The path breaks in mobile wireless networks are due to the movement of mobile nodes, node failure, channel fading and shadowing. It is desirable to deal with dynamic topology changes with optimal effort in terms of resource and channel utilization. As the nodes in wireless sensor medium make use of wireless broadcast to communicate, it is possible to make use of neighboring node information to recover from path failure. Cooperation among the neighboring nodes plays an important role in the context of routing among the mobile nodes. This paper proposes an enhancement to an existing protocol for accommodating node mobility through neighboring node information while keeping the utilization of resources to a minimum.

Development of p-type transparent semiconducting oxides for thin film transistor applications

Semiconductor physics has developed significantly in the field of re- search and industry in the past few decades due to it’s numerous practical applications. One of the relevant fields of current interest in material science is the fundamental aspects and applications of semi- conducting transparent thin films. Transparent conductors show the properties of transparency and conductivity simultaneously. As far as the band structure is concerned, the combination of the these two properties in the same material is contradictory. Generally a trans- parent material is an insulator having completely filled valence and empty conduction bands. Metallic conductivity come out when the Fermi level lies within a band with a large density of states to provide high carrier concentration. Effective transparent conductors must nec- essarily represent a compromise between a better transmission within the visible spectral range and a controlled but useful electrical con- ductivity [1–6]. Generally oxides like In2O3, SnO2, ZnO, CdO etc, show such a combination. These materials without any doping are insulators with optical band gap of about 3 eV. To become a trans- parent conductor, these materials must be degenerately doped to lift the Fermi level up into the conduction band. Degenerate doping pro- vides high mobility of extra carriers and low optical absorption. The increase in conductivity involves an increase in either carrier concen- tration or mobility. Increase in carrier concentration will enhance the absorption in the visible region while increase in mobility has no re- verse effect on optical properties. Therefore the focus of research for new transparent conducting oxide (TCO) materials is on developing materials with higher carrier mobilities.

Mobility Metric based LEACH-Mobile Protocol

Cluster based protocols like LEACH were found best suited for routing in wireless sensor networks. In mobility centric environments some improvements were suggested in the basic scheme. LEACH-Mobile is one such protocol. The basic LEACH protocol is improved in the mobile scenario by ensuring whether a sensor node is able to communicate with its cluster head. Since all the nodes, including cluster head is moving it will be better to elect a node as cluster head which is having less mobility related to its neighbours. In this paper, LEACH-Mobile protocol has been enhanced based on a mobility metric “remoteness” for cluster head election. This ensures high success rate in data transfer between the cluster head and the collector nodes even though nodes are moving. We have simulated and compared our LEACH-Mobile-Enhanced protocol with LEACHMobile. Results show that inclusion of neighbouring node information improves the routing protocol.

Routing Protocol Enhancement for handling Node Mobility in Wireless Sensor Networks

In wireless sensor networks, the routing algorithms currently available assume that the sensor nodes are stationary. Therefore when mobility modulation is applied to the wireless sensor networks, most of the current routing algorithms suffer from performance degradation. The path breaks in mobile wireless networks are due to the movement of mobile nodes, node failure, channel fading and shadowing. It is desirable to deal with dynamic topology changes with optimal effort in terms of resource and channel utilization. As the nodes in wireless sensor medium make use of wireless broadcast to communicate, it is possible to make use of neighboring node information to recover from path failure. Cooperation among the neighboring nodes plays an important role in the context of routing among the mobile nodes. This paper proposes an enhancement to an existing protocol for accommodating node mobility through neighboring node information while keeping the utilization of resources to a minimum.