A study of the preparation and characterization of bismuth telluride and bismuth oxide thin films

This thesis deals with the preparation and properties of two compounds of V-II family, viz. bismuth telluride and bismuth oxide, in thin filmform. In the first chapter is given the resume of basic solid state physics relevant to the work reported here. In the second chapter the different methods of thin film preparationtia described. Third chapter deals with the experimental techniques used for preparation and characterization of the films. Fourth chapter deals with the preparation and propertiesof bismuth telluride films. In next four chapters, the preparation and properties of bismuth oxide films are discussed in detail. In the last chapter the use of Bi205 films in the fabrication of Heat mirrors is examined and discussed.

Tailoring the microwave dielectric properties of BaRE2Ti4O12 and BaRE2Ti5O14 ceramics bycompositional variations

Ceramic dielectric resonators in the BaO-RE2O3-TiO2 (RE=rare earth) system have been prepared by the conventional solid state ceramic route. The dielectric properties have been tailored by substitution of different rare earth oxides and by bismuth oxide addition. The dielectric constants increased with Bi addition whereas the Q decreased. The temperature coeffecient of the resonant frequency improved with bismuth addition.

Tailoring the Microwave Dielectric Properties of BaRE2Ti4012 and BaRE2Ti5014 Ceramics by Compositional Variations

Ceramic dielectric resonators in the BaO-RE2O3-TiO2 (RE = rare earth) system have been prepared by the conventional solid state ceramic route. The dielectric properties have been tailored by substitution of different rare earth oxides and by bismuth oxide addition. The dielectric constants increased with Bi addition whereas the 0 decreased. The temperature coefficient of the resonant frequency improved with bismuth addition

Measurement of laser ablation threshold on doped BiSrCaCuO high temperature superconductors by the pulsed photothermal deflection technique

Laser‐induced damage and ablation thresholds of bulk superconducting samples of Bi2(SrCa)xCu3Oy(x=2, 2.2, 2.6, 2.8, 3) and Bi1.6 (Pb)xSr2Ca2Cu3 Oy (x=0, 0.1, 0.2, 0.3, 0.4) for irradiation with a 1.06 μm beam from a Nd‐YAG laser have been determined as a function of x by the pulsed photothermal deflection technique. The threshold values of power density for ablation as well as damage are found to increase with increasing values of x in both systems while in the Pb‐doped system the threshold values decrease above a specific value of x, coinciding with the point at which the Tc also begins to fall.