72 resultados para Pulsed reactors


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A low inductance, triggered spark gap switch suitable for a high-current fast discharge system has been developed. The details of the design and fabrication of this pressurized spark gap, which uses only commonly available materials are described. A transverse discharge Blumlein-driven N2 laser incorporating this device gives a peak output power of 700 kW with a FWHM of 3 ns and an efficiency of 0.51%, which is remarkably high for a pulsed nitrogen laser system.

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S1 to S3 excited singlet state absorption and two-photon absorption in Rhodamine 6G at the pump wavelengths of 532 and 1064 nm respectively are investigated. The advantages of employing the pulsed photoacoustic technique for conveniently observing excited singlet state absorption are discussed. It is shown that, since photoacoustics and fluorescence are complementary phenomena, analysis using both techniques will yield a better understanding of optical processes in molecules like Rhodamine 6G.

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Pulsed photoacoustic studies in solutions of C70 in toluene are made using the 532-nm radiation from a frequency-doubled Nd:YAG laser. It is found that contrary to expectation, there is no photoacoustic (PA) signal enhancement in the power-limiting range of laser fluences. Instead, the PA signal tends to saturate during optical power-limiting phenomenon. This could be due to the enhanced optical absorption from the photoexcited state and hence the depletion of the ground-state population. PA measurements also ruled out the possibility of multiphoton absorption in the C70 solution. We demonstrate that the nonlinear absorption leading to optical limiting is mainly due to reverse saturable absorption.

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Observation of laser induced two-photon photoemission optogalvanic (TPPOG) effect from tungsten electrode in a discharge cell using 564 nm radiation obtained from a pulsed dye laser is described. The magnitude of the POG signal is studied as a function of laser energy under various discharge parameters. Competition between one-photon and two-photon processes has been observed when nitrogen gas is used in the discharge cell.

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Two-photon absorption in Rhodamine 6G using the second harmonic of a pulsed Q-switched Nd:YAG laser has been studied by photoacoustic technique. It is observed that there is a competition between one-photon and two-photon absorption processes. At lower concentration the two-photon process is predominant over the one-photon process.

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Multimode laser emission is observed in a polymer optical fiber doped with a mixture of Rhodamine 6G (Rh 6G) and Rhodamine B (Rh B) dyes. Tuning of laser emission is achieved by using the mixture of dyes due to the energy transfer occurring from donor molecule (Rh 6G) to acceptor molecule (Rh B). The dye doped poly(methyl methacrylate)-based polymer optical fiber is pumped axially at one end of the fiber using a 532 nm pulsed laser beam from a Nd:YAG laser and the fluorescence emission is collected from the other end. At low pump energy levels, fluorescence emission is observed. When the energy is increased beyond a threshold value, laser emission occurs with a multimode structure. The optical feedback for the gain medium is provided by the cylindrical surface of the optical fiber, which acts as a cavity. This fact is confirmed by the mode spacing dependence on the diameter of the fiber.

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Department of Physics, Cochin University of Science and Technology

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The main objective of the present study is to understand different mechanisms involved in the production and evolution of plasma by the pulsed laser ablation and radio frequency magnetron sputtering. These two methods are of particular interest, as these are well accomplished methods used for surface coatings, nanostructure fabrications and other thin film devices fabrications. Material science researchers all over the world are involved in the development of devices based on transparent conducting oxide (TCO) thin films. Our laboratory has been involved in the development of TCO devices like thin film diodes using zinc oxide (ZnO) and zinc magnesium oxide (ZnMgO), thin film transistors (TFT's) using zinc indium oxide and zinc indium tin oxide, and some electroluminescent (EL) devices by pulsed laser ablation and RF magnetron sputtering.In contrast to the extensive literature relating to pure ZnO and other thin films produced by various deposition techniques, there appears to have been relatively little effort directed towards the characterization of plasmas from which such films are produced. The knowledge of plasma dynamics corresponding to the variations in the input parameters of ablation and sputtering, with the kind of laser/magnetron used for the generation of plasma, is limited. To improve the quality of the deposited films for desired application, a sound understanding of the plume dynamics, physical and chemical properties of the species in the plume is required. Generally, there is a correlation between the plume dynamics and the structural properties of the films deposited. Thus the study of the characteristics of the plume contributes to a better understanding and control of the deposition process itself. The hydrodynamic expansion of the plume, the composition, and SIze distribution of clusters depend not only on initial conditions of plasma production but also on the ambient gas composition and pressure. The growth and deposition of the films are detennined by the thermodynamic parameters of the target material and initial conditions such as electron temperature and density of the plasma.For optimizing the deposition parameters of various films (stoichiometric or otherwise), in-situ or ex-situ monitoring of plasma plume dynamics become necessary for the purpose of repeatability and reliability. With this in mind, the plume dynamics and compositions of laser ablated and RF magnetron sputtered zinc oxide plasmas have been investigated. The plasmas studied were produced at conditions employed typically for the deposition of ZnO films by both methods. Apart from this two component ZnO plasma, a multi-component material (lead zirconium titanate) was ablated and plasma was characterized.

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This work mainly concentrate to understand the optical and electrical properties of amorphous zinc tin oxide and amorphous zinc indium tin oxide thin films for TFT applications. Amorphous materials are promising in achieving better device performance on temperature sensitive substrates compared to polycrystalline materials. Most of these amorphous oxides are multicomponent and as such there exists the need for an optimized chemical composition. For this we have to make individual targets with required chemical composition to use it in conventional thin film deposition techniques like PLD and sputtering. Instead, if we use separate targets for each of the cationic element and if separately control the power during the simultaneous sputtering process, then we can change the chemical composition by simply adjusting the sputtering power. This is what is done in co-sputtering technique. Eventhough there had some reports about thin film deposition using this technique, there was no reports about the use of this technique in TFT fabrication until very recent time. Hence in this work, co-sputtering has performed as a major technique for thin film deposition and TFT fabrication. PLD were also performed as it is a relatively new technique and allows the use high oxygen pressure during deposition. This helps to control the carrier density in the channel and also favours the smooth film surface. Both these properties are crucial in TFT.Zinc tin oxide material is interesting in the sense that it does not contain costly indium. Eventhough some works were already reported in ZTO based TFTs, there was no systematic study about ZTO thin film's various optoelectronic properties from a TFT manufacturing perspective. Attempts have made to analyse the ZTO films prepared by PLD and co-sputtering. As more type of cations present in the film, chances are high to form an amorphous phase. Zinc indium tin oxide is studied as a multicomponent oxide material suitable for TFT fabrication.

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In the present work, we report the third order nonlinear optical properties of ZnO thin films deposited using self assembly, sol gel process as well as pulsed laser ablation by z scan technique. ZnO thin films clearly exhibit a negative nonlinear index of refraction at 532 nm and the observed nonlinear refraction is attributed to two photon absorption followed by free carrier absorption. Although the absolute nonlinear values for these films are comparable, there is a change in the sign of the absorptive nonlinearity of the films. The films developed by dip coating and pulsed laser ablation exhibit reverse saturable absorption whereas the self assembled film exhibits saturable absorption. These different nonlinear characteristics in the self assembled films can be mainly attributed to the saturation of linear absorption of the ZnO defect states.

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Pulsed photoacoustic studies in solution of C60 in toluene have been made using the 532 nm radiation from a frequency doubled Nd:YAG laser. Though C60 is found to exhibit the phenomenon of optical limiting, the results on photoacoustic measurements do not give any indication of multiphoton transitions as suggested in some of the earlier works. Results of photoacoustic measurements show that excited state absorption is the dominant process responsible for optical limiting while phenomena like nonlinear scattering may contribute to a lesser extent.

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Irradiation of a Polymethyl methacrylate target using a pulsed Nd-YAG laser causes plasma formation in the vicinity of the target. The refractive index gradient due to the presence of the plasma is probed using phase-shift detection technique. The phase-shift technique is a simple but sensitive technique for the determination of laser ablation threshold of solids. The number density of laser generated plasma above the ablation threshold from Polymethyl methacrylate is calculated as a function of laser fluence. The number density varies from 2×1016 cm-3 to 2×1017 cm-3 in the fluence interval 2.8-13 J · cm-2.

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Fluorescence of BaS: Sm phosphor has been studied using a pulsed Nitrogen laser (337.1 nm) as the excitation source. The spectrum consists of a broad band in the region 540–660nm superposed by the characteristic Sm3+ lines. Energy level splitting pattern of Sm3+ due to crystal field effects has been calculated and relevent field parameters are evaluated. Analysis shows that Sm3+ takes up Ba2+ substitutional sites.

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Variations in the decay times of the characteristic green emissions at 522.7, 551.3, 549.6, 547.6, 542.2, 540.2, 535.9 and 533.5nm from CaF2 :H03+ with concentration are studied at RT and LNT. A pulsed N2 laser beam of power density 1.5 MW cm-2 is used for the excitation. Temperature dependent concentration quenching of the decay times are observed for all the emission bands. But an increase in the decay time due to the reabsorption process is also observed for a few of the above bands.

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International School of Photonics, Cohin University of Science and Technology