85 resultados para microwave oscillation


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The effect of dopants with different valencies and ionic radii on the densification, structural ordering, and microwave dielectric properties of Ba(Mg1/3Ta2/3)O3 (BMT) is investigated. It is found that dopants such as Sb2O5, MnO, ZrO2, WO3, and ZnO improve the microwave dielectric properties of BMT. Addition of trivalent dopants is detrimental to the cation ordering and dielectric properties of BMT. A correlation between the microwave dielectric properties of BMT and ionic radii of the dopant has been established. The variation of the dielectric properties of pure and doped BMT at cryogenic temperatures is also discussed.

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The transient characteristics of an erbium-doped fiber (F.DF) laser, which can switch between wavelengths. are investigated. 77te laser has a set of coupled linear cavities. The slow gain dynamics of EDFs and the cross-gain saturation in the coupled cavities give rise to delayed switching responses and relocation oscillations, which are respertively measured to be l ins and 3.5 ms for the worst rase, and which mar be decreased by increasing the pump power. Thus, the switching speed of the laser may be higher than 100 Hz

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Usage of a dielectric multilayer around a dielectric Sample is studied as a means for improving the efficiency in multimode microwave- heating cavities. The results show that by using additional dielectric constant layers the appearance of undesired reflections at the sample-air interface is avoided and higher power -absorption rates within the sample and high -efficiency designs are obtained

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Development of a new type of microwave absorbing material using rubber latex and carbon. for application in the interior lining of anechoic chambers, has been reported. Absorption coefficients of different combinations were estimated at X and S bands and the results were presented graphically. A combination of 50% rubber latex, 40% carbon and 10% graphite is found to form an ideal microwave absorbing material in the X and s bands

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A forward - biased point contact germanium signal diode placed inside a waveguide section along the E -vector is found to introduce significant phase shift of microwave signals . The usefulness of the arrangement as a phase modulator for microwave carriers is demonstrated. While there is a less significant amplitude modulation accompanying phase modulation , the insertion losses are found to be negligible. The observations can be explained on the basis of the capacitance variation of the barrier layer with forward current in the diode