49 resultados para Zinc oxide - Electric properties


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Green energy and Green technology are the most of the quoted terms in the context of modern science and technology. Technology which is close to nature is the necessity of the modern world which is haunted by global warming and climatic alterations. Proper utilization of solar energy is one of the goals of Green Energy Movement. The present thesis deals with the work carried out in the eld of nanotechnology and its possible use in various applications (employing natural dyes) like solar cells. Unlike arti cial dyes, the natural dyes are available, easy to prepare, low in cost, non-toxic, environmentally friendly and fully biodegradable. Looking to the 21st century, the nano/micro sciences will be a chief contributor to scienti c and technological developments. As nanotechnology progresses and complex nanosystems are fabricated, a growing impetus is being given to the development of multi-functional and size-dependent materials. The control of the morphology, from the nano to the micrometer scales, associated with the incorporation of several functionalities can yield entirely new smart hybrid materials. They are special class of materials which provide a new method for the improvement of the environmental stability of the material with interesting optical properties and opening a land of opportunities for applications in the eld of photonics. Zinc oxide (ZnO) is one such multipurpose material that has been explored for applications in sensing, environmental monitoring, and bio-medical systems and communications technology. Understanding the growth mechanism and tailoring their morphology is essential for the use of ZnO crystals as nano/micro electromechanical systems and also as building blocks of other nanosystems.

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Organic-inorganic nanocomposites combine unique properties of both the constituents in one material. Among this group of materials, clay based as well as ZnO, TiO2 nanocomposites have been found to have diverse applications. Optoelectronic devices require polymerinorganic systems to meet certain desired properties. Dielectric properties of conventional polymers like poly(ethylene-co-vinyl acetate) (EVA) and polystyrene (PS) may also be tailor tuned with the incorporation of inorganic fillers in very small amounts. Electrical conductivity and surface resistivity of polymer matrices are found to improve with inorganic nanofillers. II-VI semiconductors and their nano materials have attracted material scientists because of their unique optical properties of photoluminescence, UV photodetection and light induced conductivity. Cadmium selenide (CdSe), zinc selenide (ZnSe) and zinc oxide (ZnO) are some of the most promising members of the IIVI semiconductor family, used in light-emitting diodes, nanosensors, non-linear optical (NLO) absorption etc. EVA and PS materials were selected as the matrices in the present study because they are commercially used polymers and have not been the subject of research for opto-electronic properties with semiconductor nanomaterials

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We describe the structure of luminescence spectrum in the visible region in nano-ZnO in colloidal and thin film forms under weak confinement regime by modeling the transition from excited state energy levels of excitons to their ground state. Measurements on nanocrystallites indicate the presence of luminescence due to excitonic emissions when excited with 255 nm. The relevant energy levels showing the transitions corresponding to the observed peaks in the emission spectrum of ZnO of particle size 18 nm are identified.

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The study is undertaken on PVC blends because of their all-round importance-One of the most prominent needs of PVC in application end-use is permanent plasticizationlo. Butadiene-acrylonitrile rubber (NBR) has been utilized as permanent plasticizer for PVC since the 1940s for wire and cable insulation, food contact, and pondliners used for oil containment23'24. Also plasticized PVC has been added to vulcanizable nitrile rubber, to yield improved ozone, thermal ageing, and chemical resistance resulting in applications including fuel hose covers, gaskets, conveyor belt covers, and printing roll covers. This blend is miscible in the range of 23 to 45 per cent acrylonitrile content in the butadiene-acrylqnitrile copolymerzs. The first phase of the study was directed towards modification blends. These blends, in addition to the polymers, require a host of additives like curatives for the NBR phase and stabilizers for the PVC phase26of the existing PVC blends, especially NBR/PVC. The second phase of the study was directed towards the development of novel PVC based blends. Chloroprene rubber (polychloroprene) (CR) is structurally similar to PVC and hence is likely to form successful blends with PVC32.

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Fluorescence is a powerful tool in biological research, the relevance of which relies greatly on the availability of sensitive and selective fluorescent probes. Nanometer sized fluorescent semiconductor materials have attracted considerable attention in recent years due to the high luminescence intensity, low photobleaching, large Stokes’ shift and high photochemical stability. The optical and spectroscopic features of nanoparticles make them very convincing alternatives to traditional fluorophores in a range of applications. Efficient surface capping agents make these nanocrystals bio-compatible. They can provide a novel platform on which many biomolecules such as DNA, RNA and proteins can be covalently linked. In the second phase of the present work, bio-compatible, fluorescent, manganese doped ZnS (ZnS:Mn) nanocrystals suitable for bioimaging applications have been developed and their cytocompatibility has been assessed. Functionalization of ZnS:Mn nanocrystals by safe materials results in considerable reduction of toxicity and allows conjugation with specific biomolecules. The highly fluorescent, bio-compatible and water- dispersible ZnS:Mn nanocrystals are found to be ideal fluorescent probes for biological labeling

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Nanoparticles are of immense importance both from the fundamental and application points of view. They exhibit quantum size effects which are manifested in their improved magnetic and electric properties. Mechanical attrition by high energy ball milling (HEBM) is a top down process for producing fine particles. However, fineness is associated with high surface area and hence is prone to oxidation which has a detrimental effect on the useful properties of these materials. Passivation of nanoparticles is known to inhibit surface oxidation. At the same time, coating polymer film on inorganic materials modifies the surface properties drastically. In this work a modified set-up consisting of an RF plasma polymerization technique is employed to coat a thin layer of a polymer film on Fe nanoparticles produced by HEBM. Ball-milled particles having different particle size ranges are coated with polyaniline. Their electrical properties are investigated by measuring the dc conductivity in the temperature range 10–300 K. The low temperature dc conductivity (I–V ) exhibited nonlinearity. This nonlinearity observed is explained on the basis of the critical path model. There is clear-cut evidence for the occurrence of intergranular tunnelling. The results are presented here in this paper

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The present thesis work focuses on hole doped lanthanum manganites and their thin film forms. Hole doped lanthanum manganites with higher substitutions of sodium are seldom reported in literature. Such high sodium substituted lanthanum manganites are synthesized and a detailed investigation on their structural and magnetic properties is carried out. Magnetic nature of these materials near room temperature is investigated explicitly. Magneto caloric application potential of these materials are also investigated. After a thorough investigation of the bulk samples, thin films of the bulk counterparts are also investigated. A magnetoelectric composite with ferroelectric and ferromagnetic components is developed using pulsed laser deposition and the variation in the magnetic and electric properties are investigated. It is established that such a composite could be realized as a potential field effect device. The central theme of this thesis is also on manganites and is with the twin objectives of a material study leading to the demonstration of a device. This is taken up for investigation. Sincere efforts are made to synthesize phase pure compounds. Their structural evaluation, compositional verification and evaluation of ferroelectric and ferromagnetic properties are also taken up. Thus the focus of this investigation is related to the investigation of a magnetoelectric and magnetocaloric application potentials of doped lanthanum manganites with sodium substitution. Bulk samples of sodium substituted lanthanum manganites. Bulk samples of sodium substituted lanthanum manganites with Na substitution ranging from 50 percent to 90 percent were synthesized using a modified citrate gel method and were found to be orthorhombic in structure belonging to a pbnm spacegroup. The variation in lattice parameters and unit cell volume with sodium concentration were also dealt with. Magnetic measurements revealed that magnetization decreased with increase in sodium concentrations.

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Structural, electronic, and optical properties of amorphous and transparent zinc tin oxide films deposited on glass substrates by pulsed laser deposition (PLD) were examined for two chemical compositions of Zn:Sn=1:1 and 2:1 as a function of oxygen partial pressure PO2 used for the film deposition and annealing temperature. Different from a previous report on sputter-deposited films Chiang et al., Appl. Phys. Lett. 86, 013503 2005 , the PLD-deposited films crystallized at a lower temperature 450 °C to give crystalline ZnO and SnO2 phases. The optical band gaps Tauc gaps were 2.80−2.85 eV and almost independent of oxygen PO2 , which are smaller than those of the corresponding crystals 3.35−3.89 eV . Films deposited at low PO2 showed significant subgap absorptions, which were reduced by postthermal annealing. Hall mobility showed steep increases when carrier concentration exceeded threshold values and the threshold value depended on the film chemical composition. The films deposited at low PO2 2 Pa had low carrier concentrations. It is thought that the low PO2 produced high-density oxygen deficiencies and generated electrons, but these electrons were trapped in localized states, which would be observed as the subgap absorptions. Similar effects were observed for 600 °C crystallized films and their resistivities were increased by formation of subgap states due to the reducing high-temperature condition. High carrier concentrations and large mobilities were obtained in an intermediate PO2 region for the as-deposited films.

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Highly conductive and transparent thin films of amorphous zinc indium tin oxide are prepared at room temperature by co-sputtering of zinc 10 oxide and indium tin oxide. Cationic contents in the films are varied by adjusting the power to the sputtering targets. Optical transmission study of 11 films showed an average transmission greater than 85% across the visible region. Maximum conductivity of 6×102 S cm−1 is obtained for Zn/In/ 12 Sn atomic ratio 0.4/0.4/0.2 in the film. Hall mobility strongly depends on carrier concentration and maximum mobility obtained is 18 cm2 V−1 s−1 13 at a carrier concentration of 2.1×1020 cm−3. Optical band gap of films varied from 3.44 eV to 3 eV with the increase of zinc content in the film 14 while the refractive index of the films at 600 nm is about 2.0.

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The dielectric properties of vacuum-deposited europium oxide films have been investigated in the frequency range from 1 kHz to 1 MHz at various temperatures (300-543 K). The dielectric constant is found to depend on film thickness and it attains a constant value beyond 1000 Å. Films deposited at higher substrate temperatures (above 423 K) exhibit improved dielectric properties owing to the recovery of stoichiometry. The frequency variation of the loss factor exhibits a minimum which increases with rise in temperature. The breakdown field strength (about 106V cm-1) is found to be thickness dependent and it varies in accordance with the Forlani-Minnaja relation. The films exhibit ohmic conduction with an activation energy of 0.86 eV at low electric fields but at higher fields the conductivity becomes space charge limited. X-ray studies show that the films are amorphous in nature. The a.c. conductivity is proportional to ω at low frequency, whereas a square law dependence is observed at higher frequencies. The optical constants n, α and k and optical band gap are calculated from the UV-visible-near-IR spectra.

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ZnGa2O4 spinel is a promising new UV transparent electronic conductor. Enhancing the electrical conductivity of this potential oxide phosphor can make it a promising transparent conducting oxide. In this paper, we have investigated the effects of processing and doping on the conductivity of semiconducting ZnGa2O4, particularly thin films. Crystalline zinc gallate thin films have been deposited on fused quartz substrates employing the pulsed laser deposition (PLD) technique at room temperature for an oxygen partial pressure of 0.1 Pa (0.001mbar). The films were found to be UV transparent, the band gap of which shifted to 4.75eV on hydrogen annealing. The band gap of the oxygen stoichiometric bulk powder samples (4.55eV) determined from diffuse reflection spectrum (DRS) shifted to 4.81eV on reduction in a hydrogen atmosphere. The electrical conductivity improved when Sn was incorporated into the ZnGa2O4 spinel. The conductivity of ZnGa2O4:Sn thin films was further improved on reduction.

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The optical and carrier transport properties of amorphous transparent zinc indium tin oxide (ZITO)(a-ZITO) thin films and the characteristics of the thin-film transistors TFTs were examined as a function of chemical composition. The as-deposited films were very conductive and showed clear free carrier absorption FCA . The analysis of the FCA gave the effective mass value of 0.53 me and a momentum relaxation time of 3.9 fs for an a-ZITO film with Zn:In:Sn = 0.35:0.35:0.3. TFTs with the as-deposited channels did not show current modulation due to the high carrier density in the channels. Thermal annealing at 300°C decreased the carrier density and TFTs fabricated with the annealed channels operated with positive threshold voltages VT when Zn contents were 25 atom % or larger. VT shifted to larger negative values, and subthreshold voltage swing increased with decreasing the Zn content, while large on–off current ratios 107–108 were kept for all the Zn contents. The field effect mobilities ranged from 12.4 to 3.4 cm2 V−1 s−1 for the TFTs with Zn contents varying from 5 to 48 atom %. The role of Zn content is also discussed in relation to the carrier transport properties and amorphous structures.

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The surface electron donor properties of sulphate modified stannic oxide have been determined from the adsorption of electron acceptors of various electron affinities on the oxide surface. The acid base properties of stannic oxide have been determined by titration method using Hammett indicators. Catalytic activities of the oxide for esterification of acetic acid using n-butanol.reduction of cyclohexanone in 2-propanol and oxidation of cyclohexanol with benzophenone have been studied. The data have been correlated with the surface electron donor properties of these oxides. The activity for reduction and oxidation decreases and that for esterification reaction increases on modification with sulphate ion. It has heen found that electron donating capacity decreased when stannic oxide was modified with sulphate ion.

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The electron donating properties of Ce02 and its mixed oxides with alumina have been determined from the studies of adsorption of electron acceptors of various electron affinities on the surface of these oxides. The catalytic activity of these oxides towards some reactions such as oxidation of alcohols and reduction of ketones have been Correlated with their surface electrondonor properties. The surface acidity/basicity of these oxides have also been determined by titration method using a set of Hammett indicators.