Preparation and Characterization ofHigh-k Aluminum Oxide Thin Films by Atomic Layer Deposition for Gate Dielectric Applications

Present work deals with the Preparation and characterization of high-k aluminum oxide thin films by atomic layer deposition for gate dielectric applications.The ever-increasing demand for functionality and speed for semiconductor applications requires enhanced performance, which is achieved by the continuous miniaturization of CMOS dimensions. Because of this miniaturization, several parameters, such as the dielectric thickness, come within reach of their physical limit. As the required oxide thickness approaches the sub- l nm range, SiO 2 become unsuitable as a gate dielectric because its limited physical thickness results in excessive leakage current through the gate stack, affecting the long-term reliability of the device. This leakage issue is solved in the 45 mn technology node by the integration of high-k based gate dielectrics, as their higher k-value allows a physically thicker layer while targeting the same capacitance and Equivalent Oxide Thickness (EOT). Moreover, Intel announced that Atomic Layer Deposition (ALD) would be applied to grow these materials on the Si substrate. ALD is based on the sequential use of self-limiting surface reactions of a metallic and oxidizing precursor. This self-limiting feature allows control of material growth and properties at the atomic level, which makes ALD well-suited for the deposition of highly uniform and conformal layers in CMOS devices, even if these have challenging 3D topologies with high aspect-ratios. ALD has currently acquired the status of state-of-the-art and most preferred deposition technique, for producing nano layers of various materials of technological importance. This technique can be adapted to different situations where precision in thickness and perfection in structures are required, especially in the microelectronic scenario.

Studies in quantum field theory at finite temperature

The thesis deals with certain quantum field systems exhibiting spontaneous symmetry breaking and their response to temperature. These models find application in diverse branches such as particle physics, solid state physics and non~linear optics. The nature of phase transition that these systems may undergo is also investigated. The thesis contains seven chapters. The first chapter is introductory and gives a brief account of the various phenomena associated with spontaneous symmetry breaking. The chapter closes with anote on the effect of temperature on quantum field systems. In chapter 2, the spontaneous symmetry breaking phenomena are reviewed in more detail. Chapter 3, deals with the formulation of ordinary and generalised sine-Gordon field theories on a lattice and the study of the nature of phase transition occurring in these systems. In chapter 4, the effect of temperature on these models is studied, using the effective potential method. Chapter 5 is a continuation of this study for another model, viz, the m6 model. The nature of phase transition is also studied. Chapters 5 and 6 constitute a report of the investigations on the behaviour of coupling constants under thermal excitation D1 $4 theory, scalar electrodynamics, abelian and non-abelian gauge theories

Fault Tolerant Error Coding and Detection using Reversible Gates

In recent years, reversible logic has emerged as one of the most important approaches for power optimization with its application in low power CMOS, quantum computing and nanotechnology. Low power circuits implemented using reversible logic that provides single error correction – double error detection (SEC-DED) is proposed in this paper. The design is done using a new 4 x 4 reversible gate called ‘HCG’ for implementing hamming error coding and detection circuits. A parity preserving HCG (PPHCG) that preserves the input parity at the output bits is used for achieving fault tolerance for the hamming error coding and detection circuits.

Fabrication of a quantum well heterostructure based on plasma polymerized aniline and its characterization using STM/STS

Two-dimensional electronic systems play a crucial role in modern electronics and offer a multitude of opportunities to study the fundamental phenomena at low dimensional physics. A quantum well heterostructure based on polyaniline (P) and iodine doped polyaniline (I) thin films were fabricated using radio frequency plasma polymerization on indium tin oxide coated glass plate. Scanning probe microscopy and scanning electron microscopy studies were employed to study the morphology and roughness of the polymer thin films. Local electronic density of states (LDOS) of the P–I–P heterostructures is probed using scanning tunnelling spectroscopy (STS). A step like LDOS is observed in the P–I–P heterostructure and is attributed to the quantum well confinement of electrons in the polymer heterostructure.

Thermo- Optic and Nonlinear-Optical studies on CdSe Quantum Dots for Photonic Applications

In general, linear- optic, thermo- optic and nonlinear- optical studies on CdSe QDs based nano uids and their special applications in solar cells and random lasers have been studied in this thesis. Photo acous- tic and thermal lens studies are the two characterization methods used for thermo- optic studies whereas Z- scan method is used for nonlinear- optical charecterization. In all these cases we have selected CdSe QDs based nano uid as potential photonic material and studied the e ect of metal NPs on its properties. Linear optical studies on these materials have been done using vari- ous characterization methods and photo induced studies is one of them. Thermal lens studies on these materials give information about heat transport properties of these materials and their suitability for applica- tions such as coolant and insulators. Photo acoustic studies shows the e ect of light on the absorption energy levels of the materials. We have also observed that these materials can be used as optical limiters in the eld of nonlinear optics. Special applications of these materials have been studied in the eld of solar cell such as QDSSCs, where CdSe QDs act as the sensitizing materials for light harvesting. Random lasers have many applications in the eld of laser technology, in which CdSe QDs act as scattering media for the gain.