An Integrated Hydro geological Study of the Muvattupuzha River Basin, Kerala, India

The present investigation on the Muvattupuzha river basin is an integrated approach based on hydrogeological, geophysical, hydrogeochemical parameters and the results are interpreted using satellite data. GIS also been used to combine the various spatial and non-spatial data. The salient finding of the present study are accounted below to provide a holistic picture on the groundwaters of the Muvattupuzha river basin. In the Muvattupuzha river basin the groundwaters are drawn from the weathered and fractured zones. The groundwater level fluctuations of the basin from 1992 to 2001 reveal that the water level varies between a minimum of 0.003 m and a maximum of 3.45 m. The groundwater fluctuation is affected by rainfall. Various aquifer parameters like transmissivity, storage coefficient, optimum yield, time for full recovery and specific capacity indices are analyzed. The depth to the bedrock of the basin varies widely from 1.5 to 17 mbgl. A ground water prospective map of phreatic aquifer has been prepared based on thickness of the weathered zone and low resistivity values (<500 ohm-m) and accordingly the basin is classified in three phreatic potential zones as good, moderate and poor. The groundwater of the Muvattupuzha river basin, the pH value ranges from 5.5 to 8.1, in acidic nature. Hydrochemical facies diagram reveals that most of the samples in both the seasons fall in mixing and dissolution facies and a few in static and dynamic natures. Further study is needed on impact of dykes on the occurrence and movement of groundwater, impact of seapages from irrigation canals on the groundwater quality and resources of this basin, and influence of inter-basin transfer of surface water on groundwater.

Effect of Different Forms of Poly o-Toluidine /Poly Vinyl Chloride Composites on Dielectric Propertiesin the Microwave Field

In this paper we report the preparation and dielectric properties of poly o-toluidine:poly vinyl chloride composites in pellet and film forms. The composites were prepared using ammonium persulfate initiator and HCl dopant. The characterization is done by TGA and DSC. The dielectric properties including dielectric loss, conductivity, dielectric constant, dielectric heating coefficient, absorption coefficient, and penetration depth were studied in the microwave field. An HP8510 vector network analyzer with rectangular cavity resonator was used for the study. Sbands (2-4 GHz), C band (5-8 GHz), and X band (8-12 GHz) frequencies were used in the microwave field. Comparisons between the pellet and film forms of composites were also included. The result shows that the dielectric properties in the microwave field are dependent on the frequency and on the method of preparation.

The Effect of Dopants on the Microwave Dielectric Properties of Ba (Mg 0.33 Ta 0.67) O3 Ceramics

The effect of dopants with different valencies and ionic radii on the densification, structural ordering, and microwave dielectric properties of Ba(Mg1/3Ta2/3)O3 (BMT) is investigated. It is found that dopants such as Sb2O5, MnO, ZrO2, WO3, and ZnO improve the microwave dielectric properties of BMT. Addition of trivalent dopants is detrimental to the cation ordering and dielectric properties of BMT. A correlation between the microwave dielectric properties of BMT and ionic radii of the dopant has been established. The variation of the dielectric properties of pure and doped BMT at cryogenic temperatures is also discussed.

Analysis of Terahertz Detection with A 2D Hot-Electron Quantum Well Detector

The operation of a previously proposed terahertz (THZ) detector is formulated in detail. The detector is based on the hot-electron effect of the 2D electron gas (2DEG) in the quantum well (QW) of a GaAs/AIGaAs heterostructure. The interaction between the THz radiation and the 2DEG, the current enhancement due to hot -electron effect, and the noise performance of the detector are analyzed

The effect of dopants on the microwave dielectric properties of Ba( Mgo.33Ta0.67)03 ceramics

The effect of dopants with different valencies and ionic radii on the densification, structural ordering, and microwave dielectric properties of Ba(Mg1t3Tazt3)O3 (BMT) is investigated. It is found that dopants such as Sb,05, MnO, ZrO,, WO1, and ZnO improve the microwave dielectric properties of BMT. Addition of trivalent dopants is detrimental to the cation ordering and dielectric properties of BMT. A correlation between the microwave dielectric properties of BMT and ionic radii of the dopant has been established. The variation of the dielectric properties of pure and doped BMT at cryogenic temperatures is also discussed

Photothermal deflection measurement on heat transport in GaAs epitaxial layers

In this paper, we report the in-plane and cross-plane measurements of the thermal diffusivity of double epitaxial layers of n-type GaAs doped with various concentrations of Si and a p-type Be-doped GaAs layer grown on a GaAs substrate by the molecular beam epitaxial method, using the laser-induced nondestructive photothermal deflection technique. The thermal diffusivity value is evaluated from the slope of the graph of the phase of the photothermal deflection signal as a function of pump-probe offset. Analysis of the data shows that the cross-plane thermal diffusivity is less than that of the in-plane thermal diffusivity. It is also seen that the doping concentration has a great influence on the thermal diffusivity value. Measurement of p-type Be-doped samples shows that the nature of the dopant also influences the effective thermal diffusivity value. The results are interpreted in terms of a phonon-assisted heat transfer mechanism and the various scattering process involved in the propagation of phonons.

Photothermal deflection measurement on heat transport in GaAs epitaxial layers

In this paper, we report the in-plane and cross-plane measurements of the thermal diffusivity of double epitaxial layers of n-type GaAs doped with various concentrations of Si and a p-type Be-doped GaAs layer grown on a GaAs substrate by the molecular beam epitaxial method, using the laser-induced nondestructive photothermal deflection technique. The thermal diffusivity value is evaluated from the slope of the graph of the phase of the photothermal deflection signal as a function of pump-probe offset. Analysis of the data shows that the cross-plane thermal diffusivity is less than that of the in-plane thermal diffusivity. It is also seen that the doping concentration has a great influence on the thermal diffusivity value. Measurement of p-type Be-doped samples shows that the nature of the dopant also influences the effective thermal diffusivity value. The results are interpreted in terms of a phonon-assisted heat transfer mechanism and the various scattering process involved in the propagation of phonons

Photothermal deflection measurement on heat transport in GaAs epitaxial layers

In this paper, we report the in-plane and cross-plane measurements of the thermal diffusivity of double epitaxial layers of n-type GaAs doped with various concentrations of Si and a p-type Be-doped GaAs layer grown on a GaAs substrate by the molecular beam epitaxial method, using the laser-induced nondestructive photothermal deflection technique. The thermal diffusivity value is evaluated from the slope of the graph of the phase of the photothermal deflection signal as a function of pump-probe offset. Analysis of the data shows that the cross-plane thermal diffusivity is less than that of the in-plane thermal diffusivity. It is also seen that the doping concentration has a great influence on the thermal diffusivity value. Measurement of p-type Be-doped samples shows that the nature of the dopant also influences the effective thermal diffusivity value. The results are interpreted in terms of a phonon-assisted heat transfer mechanism and the various scattering process involved in the propagation of phonons

Thermal characterization of intrinsic and extrinsic InP using photoacoustic technique

An open photoacoustic cell operating in the low range of chopping frequency has been employed to evaluate the thermal diffusivity values of intrinsic InP and InP doped with S, Sn and Fe. The experimental set-up is calibrated by the evaluation of thermal diffusivity value of pure Si and GaAs. The present investigation shows that doped samples show a reduced value for thermal diffusivity compared to intrinsic sample. From the analysis of data it is also seen that nature of dopant clearly influences the thermal diffusivity value of semiconductors. The results are explained in terms of phonon assisted heat transfer mechanism in semiconductors

Thermal characterization of intrinsic and extrinsic InP using photoacoustic technique

An open photoacoustic cell operating in the low range of chopping frequency has been employed to evaluate the thermal diffusivity values of intrinsic InP and InP doped with S, Sn and Fe. The experimental set-up is calibrated by the evaluation of thermal diffusivity value of pure Si and GaAs. The present investigation shows that doped samples show a reduced value for thermal diffusivity compared to intrinsic sample. From the analysis of data it is also seen that nature of dopant clearly influences the thermal diffusivity value of semiconductors. The results are explained in terms of phonon assisted heat transfer mechanism in semiconductors

Thermal characterization of intrinsic and extrinsic InP using photoacoustic technique

An open photoacoustic cell operating in the low range of chopping frequency has been employed to evaluate the thermal diffusivity values of intrinsic InP and InP doped with S, Sn and Fe. The experimental set-up is calibrated by the evaluation of thermal diffusivity value of pure Si and GaAs. The present investigation shows that doped samples show a reduced value for thermal diffusivity compared to intrinsic sample. From the analysis of data it is also seen that nature of dopant clearly influences the thermal diffusivity value of semiconductors. The results are explained in terms of phonon assisted heat transfer mechanism in semiconductors

Photodegradation of Methylorange over Zirconia Doped TiO2 Using Solar Energy

The heterogeneous photocatalytic degradation of methylorange over TiO2 is studied and is found to be cost effective. Effect of Zirconium metal incorporation over titania system is investigated. Photocatalytic degradation of methylorange using solar radiation is found to be highly economical when compared with the processes using artificial UV radiation, which require substantial electrical power input. The characterization of titania as well as modified zirconium metal doped titania systems are done using XRD, FTIR and EDAX measurements. The catalytic activities of different systems are also compared and is tried to correlate with the crystallite size and presence of dopant metal.

Surface electron properties and catalytic activity of Sr doped lanthana

The electron donating properties, surface acidity/basicity and catalytic activity of lanthana for various dopant concentrations of strontium are reported at two activation temperatures. The catalytic activity has been correlated with electron donating properties and surface acidity/basicity of the oxide.

Photothermal deflection studies on heat transport in intrinsic and extrinsic InP

Laser induced transverse photothermal deflection technique has been employed to determine the thermal parameters of InP doped with Sn, S and Fe as well as intrinsic InP. The thermal diffusivity values of these various samples are evaluated from the slope of the curve plotted between the phase of photothermal deflection signal and pump-probe offset. Analysis of the data shows that heat transport and hence the thermal diffusivity value, is greatly affected by the introduction of dopant. It is also seen that the direction of heat flow with respect to the plane of cleavage of semiconductor wafers influences the thermal diffusivity value. The results are explained in terms of dominating phonon assisted heat transfer mechanism in semiconductors.

Photoacoustic investigation of intrinsic and extrinsic Si

An open-cell configuration of the photoacoustic (PA) technique is employed to determine the thermal and transport properties of intrinsic Si and Si doped with B (p-type) and P (n-type). The experimentally obtained phase of the PA signal under heat transmission configuration is fitted to that of theoretical model by taking thermal and transport properties, namely, thermal diffusivity, diffusion coefficient, and surface recombination velocity, as adjustable parameters. It is seen from the analysis that doping and also the nature of dopant have a strong influence on the thermal and transport properties of semiconductors. The results are interpreted in terms of the carrier-assisted and phonon-assisted heat transfer mechanisms in semiconductors as well as the various scattering processes occurring in the propagation of heat carriers.