8 resultados para OVERGROWN GAN
em Doria (National Library of Finland DSpace Services) - National Library of Finland, Finland
Resumo:
In this work GaN and AlGaN layers were grown by metal-organic chemical vapor deposition (MOCVD) on sapphire substrates. The research was carried out at Micro and Nanoscience Laboratory of Helsinki University of Technology. The objective of this thesis is the study of MOCVD technique for the growth of GaN and AlGaN films and optimization of growth parameters in purpose to improve crystal quality of the films. The widely used two-step and the new multistep methods have been used for GaN, AlGaN MOCVD growth on c-plane sapphire. Properties of the GaN and AlGaN layers were studied using in-situ reflectance monitoring during MOCVD growth, atomic force microscopy and x-ray diffraction. Compared to the two step method, the multistep method has produced even better qualities of the GaN and AlGaN layers and significant reduction of threading dislocation density.
Resumo:
In this work parameters of Mg-doped GaN samples were studied using positron annihilation spectroscopy and analyzed. It is shown that gallium vacancies exist in an unintentionally doped sample. Next, the sample with higher concentration of Mg and low growth temperature contains vacancy clusters. In case of low concentration of Mg the growth temperature does not affect the formation of defects. Analog electronics can be replaced by a modern digital device. While promising a high quantity of benefits, the performance of these digitizers requires thorough adjustment. A 14-bit two channel digitizer has been tested in order to achieve better performance than the one of a traditional analog setup, and the adjustment process is described. It has been shown that the digital device is unable to achieve better energy resolution, but it is quite close to the corresponding attribute of the available analog system, which had been used for measurements in Mg-doped GaN.
Resumo:
Yhdistepuolijohde galliumnitridi (GaN) on energiatehokkaiden valkoisten ledien päämateriaali. GaN on kestävä materiaali; sillä on muun muassa alhainen säteilyreagointi ja suuri jännitekestävyys, minkä vuoksi GaN soveltuu hyvin myös maanpuolustus- ja avaruussovelluksiin. Sen iso energia-aukko mahdollistaa materiaalin käytön suurteho- ja suurtaajuussovelluksissa, ja sen suuri lämpökapasiteetti ja lämmönjohtavuuskyky avaavat edelleen uusia mahdollisuuksia materiaalin käytölle muun muassa tehovahvistimissa mikroaaltotaajuudella. GaN:ä käytetään myös sinisten ja violettien ledien valmistuksessa. Kun yhdisteeseen lisätään alumiinia, saadaan alumiinigalliumnitridin (AlGaN) energia-aukkoa ja muita ominaisuuksia säädeltyä alumiinin määrää muuttamalla. AlGaN-pintojen ominaisuuksia on tutkittu suhteellisen vähän, vaikka niiden merkitys kasvaa jatkuvasti kehitettäessä nanoteknologian sovelluksia. AlGaN-pintojen tutkiminen on tärkeää, koska monissa sovelluksissa juuri pinnat ja rajapinnat ovat huomattavassa asemassa laitteiden toiminnan kannalta. Pinnoilla sijaitseva atomien epäjärjestys, kidevirheet ja epäpuhtausatomit sekä atomien kemiallinen sidosympäristö kiinnostavat tutkijoita. Myös erilaisten pintakäsittelyjen vaikutusten tunteminen edellä mainittuihin ominaisuuksiin on tärkeää hyvien pintojen valmistuksen saavuttamiseksi. Tämän pro gradu -tutkielman on tarkoitus tutustua III–V-puolijohteiden GaN:n ja AlGaN:n pintaominaisuuksiin ja niiden muokkaukseen materiaalifysiikan pintatieteen menetelmillä. Mg-piristeisille Al0,5Ga0,5N-näytteille tehdyt LEED- ja STM-mittaukset osoittavat, että AlGaN-pinnat tarjoavat hyvän lähtökohdan bulkille tyypillisten ominaisuuksien tutkimiseen. XPS- ja SR-PES-mittaukset osoittavat, että Mg-piristys vaikuttaa aktivoituvan noin 700 °C:n lämmityksessä, ja näytteet sisältävät aiemmissa tutkimuksissa havaitun vedyn lisäksi happea ja hiiltä, jotka vaikuttavat magnesiumin aktivoitumiseen ja siitä syntyvään aukkokonsentraatioon. LEED-, STM- ja resistiivisyysmittaukset tukevat tehtyjä XPS- ja SR-PES-mittauksia. Al0,5Ga0,5N-näytteen energia-aukossa sijaitsevien aktiivisten vastaanottajatilojen määritettiin sijaitsevan 200–600 meV valenssivyön maksimin yläpuolella riippuen jälkilämmityksen kestosta.
Resumo:
The present study investigates the spatial and spectral discrimination potential for grassland patches in the inner Turku Archipelago using Landsat Thematic Mapper satellite imagery. The spatial discrimination potential was computed through overlay analysis using official grassland parcel data and a hypothetical 30 m resolution satellite image capturing the site. It found that Landsat TM imagery’s ability to retrieve pure or near-pure pixels (90% purity or more) from grassland patches smaller than 1 hectare was limited to 13% success, compared to 52% success when upscaling the resolution to 10 x 10 m pixel size. Additionally, the perimeter/area patch metric is proposed as a predictor for the suitability of the spatial resolution of input imagery. Regression analysis showed that there is a strong negative correlation between a patch’s perimeter/area ratio and its pure pixel potential. The study goes on to characterise the spectral response and discrimination potential for the five main grassland types occurring in the study area: recreational grassland, traditional pasture, modern pasture, fodder production grassland and overgrown grassland. This was done through the construction of spectral response curves, a coincident spectral plot and a contingency matrix as well as by calculating the transformed divergence for the spectral signatures, all based on training samples from the TM imagery. Substantial differences in spectral discrimination potential between imagery from the beginning of the growing season and the middle of summer were found. This is because the spectral responses for these five grassland types converge as the peak of the growing season draws nearer. Recreational grassland shows a consistent discrimination advantage over other grassland types, whereas modern pasture is most easily confused. Traditional pasture land, perhaps the most biologically valuable grassland type, can be spectrally discriminated from other grassland types with satisfactory success rates provided early growing season imagery is used.
Resumo:
In the middle of the hustle and bustle of a city, you may find a city meadow. A city meadow refers to a green area situated in an urban setting, the management of which aims at maintaining meadow species and facilitating outdoor recreation for city residents. Some of these green areas situated in cities are managed in a detailed and planned manner, while others have been left untended and are now wild, overgrown and in some cases impenetrable. However, all these meadows share one similarity: they play an important role in producing ecosystem services. What, then, is meant by ecosystem services? The multitude of flowers that bloom during summer, recreational opportunities, maintaining nature’s diversity, as well as filtering urban runoff are some of the everyday “services” that city meadows provide for the urban environment and its residents. This publication covers several different points of view by numerous experts on the importance of green areas in cities. The message is clear: management of city meadows improves both natural and cultural environments in a cost-effective manner. City meadows also help improve the health and enjoyment of city residents. When a green area is well-managed, the reputation and image of the surrounding properties and neighbourhood will also improve, as will their financial value!
Resumo:
GaN, InP and GaAs nanowires were investigated for piezoelectric response. Nanowires and structures based on them can find wide applications in areas purposes such as nanogenarators, nanodrives, Solar cells and other perspective areas. Experemental measurements were carried out on AFM Bruker multimode 8 and data was handled with Nanoscope software. AFM techniques permitted not only to visualize the surface topography, but also to show distribution of piezoresponse and allowed to calculate its properties. The calculated values are in the same range as published by other authors.