Emission, kinetic and magnetic phenomena in rare-earth and transition metal doped ZnSe single crystals

In this work emission, optical, electrical and magnetic properties of the d- and f- elements doped zinc selenide crystals were investigated within a wide temperature range. Doping was performed in various technological processes: during the growth by chemical vapor transport method; by thermal diffusion from the Bi or Zn melt. Concentration of the doping impurity in the crystals was controlled by amount of the dopant in the source material or by its concentration in the doping media. Special interest in the work was paid to the influence of the different concentrations of Cr and Yb impurities on ZnSe crystals’ properties, correlations between observed effects and similarities with the Ni, Mn and Gd dopants are analysed. Possibility of formation of the excitons bound to the doping d-ions was shown. In contrast to this, it was observed that f-elements do not bound excitons, but prevent formation of excitons bound to some uncontrolled impurities. A mechanism of Cr doping impurity interaction with background impurities and zinc selenide structural defects was proposed based on experimental data. An assumption about resonant energy transfer between double charged chromium ions and complexes based on crystals’ vacancy defects was made. A correlation between emission and magnetic properties of the d- ions doped samples was established. Based on this correlation a mechanism explaining the concentration quench of the emission was proposed. It was found that f-ions bind electrically active shallow and deep donor and acceptor states of background impurity to electrically neutral complexes. This may be observed as “purification” of ZnSe crystals by doping with the rare-earth elements, resulting i tendency of the properties of f-ion doped crystals to the properties of intrinsic crystals, but with smaller concentration of uncontrolled native and impurity defects. A possible interpretation of this effect was proposed. It was shown that selenium substituting impurities decrease efficiency of the Yb doping. Based on this experimental results an attempt to determine ytterbium ion surroundings in the crystal lattice was made. It was shown that co-doping of zinc selenide crystals with the d- and f- ions leads to the combination of the impurities influence on the material’s properties. On the basis of obtained data an interaction mechanism of the d- and f-elements co-dopants was proposed. Guided by the model of the ytterbium ion incorporation in the selenide sublattice of the ZnSe crystals, an assumption about stabilization of single charged chromium ions in the zinc sublattice crystal nodes, by means of formation of the local charge compensating clusters, was made.

The northern provinces of Sweden and Norway with part I, of Russia / published under the superintendence of the Society for the Diffusion of Useful Knowledge.

[N. 1:4400000].

Prospects of Bitcoin diffusion

Currency is something people deal with every day in their lives. The contemporary society is very much revolving around currencies. Even though technological development has been rapid, the principle of currency has stayed relatively unchanged for a long time. Bitcoin is a digital currency that introduced an alternative to other digital currencies, and to the traditional physical currencies. Bitcoin is peer-to-peer, open source, and it erases the need of a third party in transactions. Bitcoin has since inception gained certain fame, but it has not established itself as a common currency in the world. The purpose of this study was to analyse what kind of potential does Bitcoin have to become a widely accepted currency in day-to-day transactions. The main research question was divided into three sub questions: • What kind of a process is the diffusion of new innovations? • What kinds of factors speak for the wider adoption of Bitcoin? • What kinds of factors speak against the wider adoption of Bitcoin? The purpose of the study was approached by having diffusion of innovations as the theoretical framework. The four elements in diffusion of innovations are, innovation, communication, time, and social system. The theoretical framework is applied to Bitcoin, and the research questions answered by analysing Bitcoin’s potential diffusion prospects. The body of research data consisted of media texts and statistics. In this study, content analysis was the research method. The main findings of the study are that Bitcoin has clear strengths, but it faces a large amount of uncertainty. Bitcoin’s strong areas are the transactions. They are fast, easy, and cheap. From the innovation diffusion perspective Bitcoin is still relatively unknown, and the general public’s attitudes towards it are sceptical. The research findings purport that Bitcoin has potential demand especially when the financial system of a region is dysfunctional, or when there is a financial crisis. Bitcoin is not very trusted, and the majority of people do not see a reason to start using Bitcoin in the future. A large number of people associate it with illegal activities. In general people are largely unaware of what Bitcoin is or what are the strengths and weaknesses. Bitcoin is an innovative alternative currency. However, unless people see a major need for Bitcoin due to a financial crisis, or dysfunctionality in the financial system, Bitcoin will not become much more widespread as it is today. Bitcoin’s underlying technology can be harnessed to multiple uses. Developments in that field in the future are something that future researchers could look into.

Two-dimensional drift-diffusion simulation of organic solar cells

The aim of this master's thesis is to develop a two-dimensional drift-di usion model, which describes charge transport in organic solar cells. The main bene t of a two-dimensional model compared to a one-dimensional one is the inclusion of the nanoscale morphology of the active layer of a bulk heterojunction solar cell. The developed model was used to study recombination dynamics at the donor-acceptor interface. In some cases, it was possible to determine e ective parameters, which reproduce the results of the two-dimensional model in the one-dimensional case. A summary of the theory of charge transport in semiconductors was presented and discussed in the context of organic materials. Additionally, the normalization and discretization procedures required to nd a numerical solution to the charge transport problem were outlined. The charge transport problem was solved by implementing an iterative scheme called successive over-relaxation. The obtained solution is given as position-dependent electric potential, free charge carrier concentrations and current densities in the active layer. An interfacial layer, separating the pure phases, was introduced in order to describe charge dynamics occurring at the interface between the donor and acceptor. For simplicity, an e ective generation of free charge carriers in the interfacial layer was implemented. The pure phases simply act as transport layers for the photogenerated charges. Langevin recombination was assumed in the two-dimensional model and an analysis of the apparent recombination rate in the one-dimensional case is presented. The recombination rate in a two-dimensional model is seen to e ectively look like reduced Langevin recombination at open circuit. Replicating the J-U curves obtained in the two-dimensional model is, however, not possible by introducing a constant reduction factor in the Langevin recombination rate. The impact of an acceptor domain in the pure donor phase was investigated. Two cases were considered, one where the acceptor domain is isolated and another where it is connected to the bulk of the acceptor. A comparison to the case where no isolated domains exist was done in order to quantify the observed reduction in the photocurrent. The results show that all charges generated at the isolated domain are lost to recombination, but the domain does not have a major impact on charge transport. Trap-assisted recombination at interfacial trap states was investigated, as well as the surface dipole caused by the trapped charges. A theoretical expression for the ideality factor n_id as a function of generation was derived and shown to agree with simulation data. When the theoretical expression was fitted to simulation data, no interface dipole was observed.