Determination of chemical composition and its relationship with optical properties of Ti-N and Ti-V-N sputtered thin films

In the investigation of thin films of transition metal nitrides, an essential role is played by the accurate determination of their chemical composition. Actually the chemical composition depends on the deposition parameters and influences the optical properties. These relations are illustrated in thin films of TiNx and (Ti1-yVy)N-x deposited by reactive magnetron sputtering from composite targets of the elements. By variation of the nitrogen partial pressure and the target composition, different samples have been obtained. The chemical composition has been measured by electron probe microanalysis at low irradiation voltages. The optical properties are evaluated by ex-situ ellipsometry. Using the screened Drude model, they are correlated with the differences in composition. Adding vanadium or nitrogen in Ti-N is shown to have the same effect on the optical properties.

Point defects and texture of Pd1-xInx sputtered intermetallic thin films

Pd1-xInx thin films (0.4 < x < 0.56) were prepared by radio frequency sputtering from a multi-zone target. The properties of these Hume-Rothery alloys were studied by X-ray diffractometry, electron probe microanalysis and scanning tunneling microscopy. The diffraction spectra were analyzed to obtain the intensity ratio of the (100) superlattice line to the (200) normal line, together with the variations of the lattice constant. The results ape explained quantitatively by a model based on point defects, i.e. Pd vacancies in In-rich films and Pd antisite atoms in Pd-rich films. In-rich films grow preferentially in the [100] direction while Pd-rich films grow preferentially in the [110] direction. The grains in indium-rich sputtered films appear to be enclosed in an atomically thick, indium-rich layer. The role of texture and the influence of point defects on electrical resistivity is also reported. (C) 1996 Elsevier Science Limited.

Structural and electrical properties of Fe-doped TiO2 thin films

The present study discusses the effect of iron doping in TiO2 thin films deposited by rf sputtering. Iron doping induces a structural transformation from anatase to rutile and electrical measurements indicate that iron acts as an acceptor impurity. Thermoelectric power measurement shows a transition between n-type and p-type electrical conduction for an iron concentration around 0.13 at.%. The highest p-type conductivity at room temperature achieved by iron doping was 10(-6) S m(-1).

Speciation and Bioavailability Measurements of Environmental Plutonium Using Diffusion in Thin Films.

The biological uptake of plutonium (Pu) in aquatic ecosystems is of particular concern since it is an alpha-particle emitter with long half-life which can potentially contribute to the exposure of biota and humans. The diffusive gradients in thin films technique is introduced here for in-situ measurements of Pu bioavailability and speciation. A diffusion cell constructed for laboratory experiments with Pu and the newly developed protocol make it possible to simulate the environmental behavior of Pu in model solutions of various chemical compositions. Adjustment of the oxidation states to Pu(IV) and Pu(V) described in this protocol is essential in order to investigate the complex redox chemistry of plutonium in the environment. The calibration of this technique and the results obtained in the laboratory experiments enable to develop a specific DGT device for in-situ Pu measurements in freshwaters. Accelerator-based mass-spectrometry measurements of Pu accumulated by DGTs in a karst spring allowed determining the bioavailability of Pu in a mineral freshwater environment. Application of this protocol for Pu measurements using DGT devices has a large potential to improve our understanding of the speciation and the biological transfer of Pu in aquatic ecosystems.

Composition and growth mode of MoSx sputtered films

MoS(x) lubricating thin films were deposited by nonreactive, reactive, and low energy ion-assisted radio-frequency (rf) magnetron sputtering from a MoS2 target. Depending on the total and reactive gas pressures, the film composition ranges between MoS0.7 and MoS2.8. A low working pressure was found to have effects similar to those of low-energy ion irradiation. Films deposited at high pressure have (002) planes preferentially perpendicular to the substrate, whereas films deposited at low pressure or under low-energy ion irradiation have (002) mainly parallel to it. Parallel films are sulfur deficient (MoS1.2-1.4). Their growth is explained in terms of an increased reactivity of the basal surfaces, itself a consequence of the creation of surface defects due to ion irradiation. The films exhibit a lubricating character for all compositions above MoS1.2. The longest lifetime in ball-on-disk wear test was found for MoS1.5.