Composition and growth mode of MoSx sputtered films


Autoria(s): Moser J.; Lévy F.; Bussy F.
Data(s)

1994

Resumo

MoS(x) lubricating thin films were deposited by nonreactive, reactive, and low energy ion-assisted radio-frequency (rf) magnetron sputtering from a MoS2 target. Depending on the total and reactive gas pressures, the film composition ranges between MoS0.7 and MoS2.8. A low working pressure was found to have effects similar to those of low-energy ion irradiation. Films deposited at high pressure have (002) planes preferentially perpendicular to the substrate, whereas films deposited at low pressure or under low-energy ion irradiation have (002) mainly parallel to it. Parallel films are sulfur deficient (MoS1.2-1.4). Their growth is explained in terms of an increased reactivity of the basal surfaces, itself a consequence of the creation of surface defects due to ion irradiation. The films exhibit a lubricating character for all compositions above MoS1.2. The longest lifetime in ball-on-disk wear test was found for MoS1.5.

Identificador

http://serval.unil.ch/?id=serval:BIB_9E81E5239E8E

doi:10.1116/1.579157

Idioma(s)

en

Fonte

Journal of Vacuum Science and Technology A - Vacuum, Surfaces, and Films, vol. 12, pp. 494-500

Tipo

info:eu-repo/semantics/article

article