Composition and growth mode of MoSx sputtered films
Data(s) |
1994
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Resumo |
MoS(x) lubricating thin films were deposited by nonreactive, reactive, and low energy ion-assisted radio-frequency (rf) magnetron sputtering from a MoS2 target. Depending on the total and reactive gas pressures, the film composition ranges between MoS0.7 and MoS2.8. A low working pressure was found to have effects similar to those of low-energy ion irradiation. Films deposited at high pressure have (002) planes preferentially perpendicular to the substrate, whereas films deposited at low pressure or under low-energy ion irradiation have (002) mainly parallel to it. Parallel films are sulfur deficient (MoS1.2-1.4). Their growth is explained in terms of an increased reactivity of the basal surfaces, itself a consequence of the creation of surface defects due to ion irradiation. The films exhibit a lubricating character for all compositions above MoS1.2. The longest lifetime in ball-on-disk wear test was found for MoS1.5. |
Identificador |
http://serval.unil.ch/?id=serval:BIB_9E81E5239E8E doi:10.1116/1.579157 |
Idioma(s) |
en |
Fonte |
Journal of Vacuum Science and Technology A - Vacuum, Surfaces, and Films, vol. 12, pp. 494-500 |
Tipo |
info:eu-repo/semantics/article article |