35 resultados para high-temperature effects

em Consorci de Serveis Universitaris de Catalunya (CSUC), Spain


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We have studied the effects of rapid thermal annealing at 1300¿°C on GaN epilayers grown on AlN buffered Si(111) and on sapphire substrates. After annealing, the epilayers grown on Si display visible alterations with craterlike morphology scattered over the surface. The annealed GaN/Si layers were characterized by a range of experimental techniques: scanning electron microscopy, optical confocal imaging, energy dispersive x-ray microanalysis, Raman scattering, and cathodoluminescence. A substantial Si migration to the GaN epilayer was observed in the crater regions, where decomposition of GaN and formation of Si3N4 crystallites as well as metallic Ga droplets and Si nanocrystals have occurred. The average diameter of the Si nanocrystals was estimated from Raman scattering to be around 3¿nm. Such annealing effects, which are not observed in GaN grown on sapphire, are a significant issue for applications of GaN grown on Si(111) substrates when subsequent high-temperature processing is required.

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The degradation of the filaments is usually studied by checking the silicidation or carbonization status of the refractory metal used as catalysts, and their effects on the structural stability of the filaments. In this paper, it will be shown that the catalytic stability of a filament heated at high temperature is much shorter than its structural lifetime. The electrical resistance of a thin tungsten filament and the deposition rate of the deposited thin film have been monitored during the filament aging. It has been found that the deposition rate drops drastically once the quantity of dissolved silicon in the tungsten reaches the solubility limit and the silicides start precipitating. This manuscript concludes that the catalytic stability is only guaranteed for a short time and that for sufficiently thick filaments it does not depend on the filament radius.

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An accurate mass formula at finite temperature has been used to obtain a more precise estimation of temperature effects on fission barriers calculated within the liquid drop model.

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Magnetization, heat capacity, and neutron diffraction experiments on the beta-phase of the dithiadiazolyl radical, p-NC.C6F4.CNSSN., provide conclusive evidence that this system exhibits noncollinear antiferromagnetism at 35.5 K, an unprecedented temperature for an organic radical. On the basis of magnetization and powder neutron diffraction results, coupled with theoretical calculations of the spin distribution within the molecule, a magnetic structure for this compound is proposed in which the interactions propagate through S . . .N contacts.

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The scope of this work is the systematic study of the silicidation process affecting tungsten filaments at high temperature (1900ºC) used for silane decomposition in the hot-wire chemical vapour deposition technique (HWCVD). The correlation between the electrical resistance evolution of the filaments, Rfil(t), and the different stages of the their silicidation process is exposed. Said stages correspond to: the rapid formation of two WSi2 fronts at the cold ends of the filaments and their further propagation towards the middle of the filaments; and, regarding the hot central portion of the filaments: a initial stage of silicon dissolution into the tungsten bulk, with a random duration for as-manufactured filaments, followed by the inhomogeneous nucleation of W5Si3 (which is later replaced by WSi2) and its further growth towards the filaments core. An electrical model is used to obtain real-time information about the current status of the filaments silicidation process by simply monitoring their Rfil(t) evolution during the HWCVD process. It is shown that implementing an annealing pre-treatment to the filaments leads to a clearly repetitive trend in the monitored Rfil(t) signatures. The influence of hydrogen dilution of silane on the filaments silicidation process is also discussed.

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We argue that low-temperature effects in QED can, if anywhere, only be quantitatively interesting for bound electrons. Unluckily the dominant thermal contribution turns out to be level independent, so that it does not affect the frequency of the transition radiation.

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We argue that low-temperature effects in QED can, if anywhere, only be quantitatively interesting for bound electrons. Unluckily the dominant thermal contribution turns out to be level independent, so that it does not affect the frequency of the transition radiation.

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Increasing greenhouse light transmission has a positive effect not only in Northern latitudes but in Mediterranean countries as well. A greenhouse, H2, with a tetrafluoroethylene copolymer 60 microns film, (Asahi Glass company, Aflex) characterised by its high light transmission and durability was compared to another greenhouse with a co-extruded film considered as a control, H1. Tomato crop response to the increase in light during winter and summer with high temperature and light was evaluated. Light transmission in H2 remained very high in spite of the observed dust accumulation and the low angle of incidence of the winter solar radiation. Transmissivity was clearly higher for H2 (81 to 83 % throughout the season) than in the control (around 63 %). The rest of the climatic parameters were similar in both greenhouses, either in the winter or in the summer evaluations. In spite of the high solar radiation in H2, the summer temperature could be maintained at the desired levels by using evaporative cooling. Accumulated tomato yield and quality was better in the H2 greenhouse (15 % more for the winter crop and 27% more for the summer crop). Fruit size was bigger in the winter crop. As an overall conclusion, the use of high light transmissive films in Mediterranean areas is very convenient for many vegetable crops. This is valid not only in winter but in summer, provided the greenhouse has good ventilation or evaporative cooling to overcome the increase in sensible heat caused by this increase in light..

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We report a systematic study of the low-temperature electrical conductivity in a series of SrRuO3 epitaxial thin films. At relatively high temperature the films display the conventional metallic behavior. However, a well-defined resistivity minimum appears at low temperature. This temperature dependence can be well described in a weak localization scenario: the resistivity minimum arising from the competition of electronic self-interference effects and the normal metallic character. By appropriate selection of the film growth conditions, we have been able to modify the mean-free path of itinerant carriers and thus to tune the relative strength of the quantum effects. We show that data can be quantitatively described by available theoretical models.

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El projecte consisteix en l’anàlisi tèrmica de l’obtenció d’òxids de ceri a partirde precursors moleculars com són el propionat de ceri (III), el propionat de ceri (III)dopat amb gadolini i el propionat de ceri (III) dopat amb zirconi. Els òxids resultantssón materials superconductors que ofereixen una resistència nul•la al pas del correnten determinades condicions. Per realitzar l’estudi hem fet servir quatre tècniques diferents: termogravimetria, calorimetria diferencial, espectrometria de masses i difracció de raigs-x

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Differential scanning calorimetry (DSC) was used to study the dehydrogenation processes that take place in three hydrogenated amorphous silicon materials: nanoparticles, polymorphous silicon, and conventional device-quality amorphous silicon. Comparison of DSC thermograms with evolved gas analysis (EGA) has led to the identification of four dehydrogenation processes arising from polymeric chains (A), SiH groups at the surfaces of internal voids (A'), SiH groups at interfaces (B), and in the bulk (C). All of them are slightly exothermic with enthalpies below 50 meV/H atoms , indicating that, after dissociation of any SiH group, most dangling bonds recombine. The kinetics of the three low-temperature processes [with DSC peak temperatures at around 320 (A),360 (A'), and 430°C (B)] exhibit a kinetic-compensation effect characterized by a linea relationship between the activation entropy and enthalpy, which constitutes their signature. Their Si-H bond-dissociation energies have been determined to be E (Si-H)0=3.14 (A), 3.19 (A'), and 3.28 eV (B). In these cases it was possible to extract the formation energy E(DB) of the dangling bonds that recombine after Si-H bond breaking [0.97 (A), 1.05 (A'), and 1.12 (B)]. It is concluded that E(DB) increases with the degree of confinement and that E(DB)>1.10 eV for the isolated dangling bond in the bulk. After Si-H dissociation and for the low-temperature processes, hydrogen is transported in molecular form and a low relaxation of the silicon network is promoted. This is in contrast to the high-temperature process for which the diffusion of H in atomic form induces a substantial lattice relaxation that, for the conventional amorphous sample, releases energy of around 600 meV per H atom. It is argued that the density of sites in the Si network for H trapping diminishes during atomic diffusion

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Aquest projecte, que col•labora amb el Grup de Recerca en Materials i termodinàmica,tractarà de com obtenir òxids de bari purs per incloure en la matriu del superconductorYBCO a partir de diversos precursors moleculars tals com l’acetat de bari, el propionatde bari i l’etil hexaonat de bari. La dificultat rau en la descomposició tèrmica d’aquestsprecursors a òxid, ja que solen descompondre’s a carbonat. L’estudi consistirà encercar les condicions que evitin la formació de carbonat i per tant afavoreixin l’obtencióde l’òxid.L’estudi es realitza fent ús de les tècniques d’anàlisi tèrmica tals com latermogravimetria i l’anàlisi tèrmica diferencial. A posteriori, també hem utilitzat ladifracció de Raigs-X que ens permetrà analitzar el residu sòlid resultat de ladescomposició i per tant saber quin compost tenim, si òxid o carbonat. Tot i això, caltenir en compte que aquesta tècnica s’ha d’aplicar en finalitzar l’anàlisi tèrmica ja quesinó l’òxid que es forma reacciona amb el CO2 de l’atmosfera amb molta facilitat ialeshores s’observa només carbonat en el resultat

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Estudi realitzat a partir d’una estada a l’ Institut für Komplexe Materialien, Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden, entre 2010 i 2011. S'ha explorat l'efecte de les condicions i influència dels elements d'aleació en la capacitat de formació de vidre, l'estructura i les propietats tèrmiques i magnètiques de vidres metàl•lics massissos i materials nanocristal•lins en base Fe. La producció d'aquests materials en forma de cintes de unes 20 micres de gruix ha estat àmpliament estudiada i s'ha vist que presenten unes propietats excel•lents com a materials magnètics tous. El propòsit general d'aquest projecte era l'obtenció de composicions òptimes amb alta capacitat de formar vidre i amb excel•lents propietats magnètiques com a materials magnètics tous combinat amb bones propietats mecàniques. El projecte prenia com a punt de partida l'aliatge [FeCoBSi]96Nb4 ja que és el que presenta millor capacitat de formar vidre i presenta una alta imantació de saturació i baix camp coercitiu. S'ha fet un estudi dels factors fonamentals que intervenen en la formació de l'estat vitri. La composició abans esmentada ha estat variada amb l'addició d'altres elements per estudiar com afecten aquests nous elements a les propietats, la formació de vidre i l'estructura dels aliatges resultants amb l'objectiu de millorar-ne les propietats magnètiques i la capacitat de formació de vidre. Entre altres s'ha usat el Zr, Mo, Y i el Gd per millorar la formació de vidre; i el Co i el Ni per millorar les propietats magnètiques a alta temperatura. S'han estudiat les relacions entre la capacitat de formació de vidre i la seva estabilitat tèrmica, la resistència a la cristal•lització i la estructura de l'aliatge resultant després del procés de solidificació. Per aquest estudi s'han determinat els mecanismes que controlen la transformació i la seva cinètica així com les fases que es formen durant el tractament tèrmic permetent la formulació de models predictius.

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All ontogenetic stages of a life cycle are exposed to environmental conditions so that population persistence depends on the performance of both adults and offspring. Most studies analysing the influence of abiotic conditions on species performance have focussed on adults, while studies covering early life-history stages remain rare. We investigated the responses of early stages of two widely introduced ascidians, Styela plicata and Microcosmus squamiger, to different abiotic conditions. Stressors mimicked conditions in the habitats where both species can be found in their distributional ranges and responses were related to the selection potential of their populations by analysing their genetic diversity. Four developmental stages (egg fertilisation, larval development, settlement, metamorphosis) were studied after exposure to high temperature (30°C), low salinities (26 and 22 ) and high copper concentrations (25, 50 and 100 µg/L). Although most stressors effectively led to failure of complete development (fertilisation through metamorphosis), fertilisation and larval development were the most sensitive stages. All the studied stressors affected the development of both species, though responses differed with stage and stressor. S. plicata was overall more resistant to copper, and some stages of M. squamiger to low salinities. No relationship was found between parental genetic composition and responses to stressors. We conclude that successful development can be prevented at several life-history stages, and therefore, it is essential to consider multiple stages when assessing species' abilities to tolerate stress. Moreover, we found that early development of these species cannot be completed under conditions prevailing where adults live. These populations must therefore recruit from elsewhere or reproduce during temporal windows of more benign conditions. Alternatively, novel strategies or behaviours that increase overall reproductive success might be responsible for ensuring population survival.