Self-interference of charge carriers in ferromagnetic SrRuO3
Contribuinte(s) |
Universitat de Barcelona |
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Data(s) |
03/05/2012
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Resumo |
We report a systematic study of the low-temperature electrical conductivity in a series of SrRuO3 epitaxial thin films. At relatively high temperature the films display the conventional metallic behavior. However, a well-defined resistivity minimum appears at low temperature. This temperature dependence can be well described in a weak localization scenario: the resistivity minimum arising from the competition of electronic self-interference effects and the normal metallic character. By appropriate selection of the film growth conditions, we have been able to modify the mean-free path of itinerant carriers and thus to tune the relative strength of the quantum effects. We show that data can be quantitatively described by available theoretical models. |
Identificador | |
Idioma(s) |
eng |
Publicador |
American Institute of Physics |
Direitos |
(c) American Institute of Physics, 2004 info:eu-repo/semantics/openAccess |
Palavras-Chave | #Ferromagnetisme #Conductivitat elèctrica #Pel·lícules fines #Ferromagnetism #Electric conductivity #Thin films |
Tipo |
info:eu-repo/semantics/article |