Self-interference of charge carriers in ferromagnetic SrRuO3


Autoria(s): Herranz Casabona, Gervasi; Sánchez Barrera, Florencio; Martínez Perea, Benjamin; Fontcuberta i Griñó, Josep; García-Cuenca Varona, María Victoria; Ferrater Martorell, Cèsar; Varela Fernández, Manuel, 1956-
Contribuinte(s)

Universitat de Barcelona

Data(s)

03/05/2012

Resumo

We report a systematic study of the low-temperature electrical conductivity in a series of SrRuO3 epitaxial thin films. At relatively high temperature the films display the conventional metallic behavior. However, a well-defined resistivity minimum appears at low temperature. This temperature dependence can be well described in a weak localization scenario: the resistivity minimum arising from the competition of electronic self-interference effects and the normal metallic character. By appropriate selection of the film growth conditions, we have been able to modify the mean-free path of itinerant carriers and thus to tune the relative strength of the quantum effects. We show that data can be quantitatively described by available theoretical models.

Identificador

http://hdl.handle.net/2445/24810

Idioma(s)

eng

Publicador

American Institute of Physics

Direitos

(c) American Institute of Physics, 2004

info:eu-repo/semantics/openAccess

Palavras-Chave #Ferromagnetisme #Conductivitat elèctrica #Pel·lícules fines #Ferromagnetism #Electric conductivity #Thin films
Tipo

info:eu-repo/semantics/article