Model analític de les característiques DC de transistors de doble porta

En aquest treball s’implementa un model analític de les característiques DC del MOSFET de doble porta (DG-MOSFET), basat en la solució de l’equació de Poisson i en la teoria de deriva-difussió[1]. El MOSFET de doble porta asimètric presenta una gran flexibilitat en el disseny de la tensió llindar i del corrent OFF. El model analític reprodueix les característiques DC del DG-MOSFET de canal llarg i és la base per construir models circuitals tipus SPICE.

The maximum voltage drop in an on-chip power distribution network: analysis of square, triangular and hexagonal power pad arrangements

A mathematical model of the voltage drop which arises in on-chip power distribution networks is used to compare the maximum voltage drop in the case of different geometric arrangements of the pads supplying power to the chip. These include the square or Manhattan power pad arrangement, which currently predominates, as well as equilateral triangular and hexagonal arrangements. In agreement with the findings in the literature and with physical and SPICE models, the equilateral triangular power pad arrangement is found to minimize the maximum voltage drop. This headline finding is a consequence of relatively simple formulas for the voltage drop, with explicit error bounds, which are established using complex analysis techniques, and elliptic functions in particular.

Stenbergia colchiciflora Waldst. & Kit. en el Valle del Ebro.

Especie nueva para la flora catalano-aragonesa, encontrada en la Serreta Negra de Fraga y en la Valcuerna de Candasnos. Esta planta de origen póntico mediterráneo, debe añadirse a la lista de especies esteparias del Mediterráneo Oriental que se refugian en el Vedat de Fraga (O. DE BOLOS, Mem. Real Acad, Barcelona 42, n.° 6. 1973)

The maximum voltage drop in an on-chip power distribution network: analysis of square, triangular and hexagonal power pad arrangements

A mathematical model of the voltage drop which arises in on-chip power distribution networks is used to compare the maximum voltage drop in the case of different geometric arrangements of the pads supplying power to the chip. These include the square or Manhattan power pad arrangement, which currently predominates, as well as equilateral triangular and hexagonal arrangements. In agreement with the findings in the literature and with physical and SPICE models, the equilateral triangular power pad arrangement is found to minimize the maximum voltage drop. This headline finding is a consequence of relatively simple formulas for the voltage drop, with explicit error bounds, which are established using complex analysis techniques, and elliptic functions in particular.