Voltage fluctuations in IC power supply distribution

The supply voltage decrease and powerconsumption increase of modern ICs made the requirements for low voltage fluctuation caused by packaging and on-chip parasitic impedances more difficult to achieve. Most of the research works on the area assume that all the nodes of the chip are fed at thesame voltage, in such a way that the main cause of disturbance or fluctuation is the parasitic impedance of packaging. In the paper an approach to analyze the effect of high and fast current demands on the on-chip power supply network. First an approach to model the entire network by considering a homogeneous conductive foil is presented. The modification of the timing parameters of flipflops caused by spatial voltage drops through the IC surface are also investigated.

Unusual voltage sag event detection in power systems

Three multivariate statistical tools (principal component analysis, factor analysis, analysis discriminant) have been tested to characterize and model the sags registered in distribution substations. Those models use several features to represent the magnitude, duration and unbalanced grade of sags. They have been obtained from voltage and current waveforms. The techniques are tested and compared using 69 registers of sags. The advantages and drawbacks of each technique are listed

Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes

High quantum efficiency erbium doped silicon nanocluster (Si-NC:Er) light emitting diodes (LEDs) were grown by low-pressure chemical vapor deposition (LPCVD) in a complementary metal-oxide-semiconductor (CMOS) line. Erbium (Er) excitation mechanisms under direct current (DC) and bipolar pulsed electrical injection were studied in a broad range of excitation voltages and frequencies. Under DC excitation, Fowler-Nordheim tunneling of electrons is mediated by Er-related trap states and electroluminescence originates from impact excitation of Er ions. When the bipolar pulsed electrical injection is used, the electron transport and Er excitation mechanism change. Sequential injection of electrons and holes into silicon nanoclusters takes place and nonradiative energy transfer to Er ions is observed. This mechanism occurs in a range of lower driving voltages than those observed in DC and injection frequencies higher than the Er emission rate.

Polarization strategies to improve the emission of a Si-based light source emitting at 1.55 um

We present a electroluminescence (EL) study of the Si-rich silicon oxide (SRSO) LEDs with and without Er3+ ions under different polarization schemes: direct current (DC) and pulsed voltage (PV). The power efficiency of the devices and their main optical limitations are presented. We show that under PV polarization scheme, the devices achieve one order of magnitude superior performance in comparison with DC. Time-resolved measurements have shown that this enhancement is met only for active layers in which annealing temperature is high enough (>1000 ◦C) for silicon nanocrystal (Si-nc) formation. Modeling of the system with rate equations has been done and excitation cross-sections for both Si-nc and Er3+ ions have been extracted.

Nanoscale electrical conductivity of the purple membrane monolayer

Nanoscale electron transport through the purple membrane monolayer, a two-dimensional crystal lattice of the transmembrane protein bacteriorhodopsin, is studied by conductive atomic force microscopy. We demonstrate that the purple membrane exhibits nonresonant tunneling transport, with two characteristic tunneling regimes depending on the applied voltage (direct and Fowler-Nordheim). Our results show that the purple membrane can carry significant current density at the nanometer scale, several orders of magnitude larger than previously estimated by macroscale measurements.

Model analític de les característiques DC de transistors de doble porta

En aquest treball s’implementa un model analític de les característiques DC del MOSFET de doble porta (DG-MOSFET), basat en la solució de l’equació de Poisson i en la teoria de deriva-difussió[1]. El MOSFET de doble porta asimètric presenta una gran flexibilitat en el disseny de la tensió llindar i del corrent OFF. El model analític reprodueix les característiques DC del DG-MOSFET de canal llarg i és la base per construir models circuitals tipus SPICE.

Estimation of zero-sequence impedance of undergrounds cables for single-phase fault location in distribution systems with electric arc

This paper focus on the problem of locating single-phase faults in mixed distribution electric systems, with overhead lines and underground cables, using voltage and current measurements at the sending-end and sequence model of the network. Since calculating series impedance for underground cables is not as simple as in the case of overhead lines, the paper proposes a methodology to obtain an estimation of zero-sequence impedance of underground cables starting from previous single-faults occurred in the system, in which an electric arc occurred at the fault location. For this reason, the signal is previously pretreated to eliminate its peaks voltage and the analysis can be done working with a signal as close as a sinus wave as possible

Instal·lacions de baixa tensió, mesures contra incendis, climatització i qualificació energètica d’un supermercat

El present projecte pretén oferir una solució constructiva de les instal•lacions de baixa tensió, mesures contra incendis i climatització d’un supermercat i també l’obtenció d’una qualificació energètica de l’establiment. Aquesta activitat terciari d’ús comercial és classifica com un comerç al detall amb predomini de productes alimentaris, begudes i una altra àmplia gamma de mercaderies (com són els cosmètics, detergents, productes de papereria, etc.)

Document Tècnic Edificació: instal·lacions d'electricitat Baixa Tensió

El projecte es basa en una proposta de modificació d’una Norma Tecnològica d’Edificació sobre les instal•lacions elèctriques de baixa tensió del 1973, per tal de donar-li un caire més actual

Projecte d’una xarxa de distribució elèctrica de mitja tensió, centres de transformació i instal·lacions d'enllaç d’un polígon industrial

Disseny d’una xarxa de distribució d’alta tensió de tercera categoria de 25 kV subterrània, a partir d’ara mitja tensió (MT), amb deu centres de transformació i distribució de 1000 kVA cadascun. La reforma d’un centre de transformació i distribució de 630 kVA i el disseny de la xarxa de baixa tensió. Amb la finalitat de donar subministrament d’energia elèctrica a les industries d’un polígon del terme municipal de Torroella de Montgrí (GIRONA) i obtenir l’autorització administrativa per la posterior posada en servei d’aquesta instal•lació.No queda inclòs en aquest projecte la instal•lació d’enllumenat públic

Análisis de una experiencia de aprendizaje basado en proyectos en la asignatura de Fundamentos de Física = Project based learning: analysis of an experience in Introductory Physics courses

In this work we present and analyze the application of an experience of Project Based Learning (PBL) in the matter of Physics II of the Industrial Design university degree (Girona University) during 2005-2006 courses. This methodology was applied to the Electrostatic and Direct Current subjects. Furthermore, evaluation and self evaluation results were shown and the academic results were compared with results obtained in the same subjects applying conventional teaching methods

Self-consistent theory of current and voltage noise in multimode ballistic conductors

Electron transport in a self-consistent potential along a ballistic two-terminal conductor has been investigated. We have derived general formulas which describe the nonlinear current-voltage characteristics, differential conductance, and low-frequency current and voltage noise assuming an arbitrary distribution function and correlation properties of injected electrons. The analytical results have been obtained for a wide range of biases: from equilibrium to high values beyond the linear-response regime. The particular case of a three-dimensional Fermi-Dirac injection has been analyzed. We show that the Coulomb correlations are manifested in the negative excess voltage noise, i.e., the voltage fluctuations under high-field transport conditions can be less than in equilibrium.

Per-antenna rate and power control for MIMO layered architectures in the low- and high-power regimes

In a MIMO layered architecture, several codewordsare transmitted from a multiplicity of antennas. Although thespectral efficiency is maximized if the rates of these codewordsare separately controlled, the feedback rate within the linkadaptation loop is reduced if they are constrained to be identical.This poses a direct tradeoff between performance andfeedback overhead. This paper provides analytical expressionsthat quantify the difference in spectral efficiency between bothapproaches for arbitrary numbers of antennas. Specifically, thecharacterization takes place in the realm of the low- and highpowerregimes via expansions that are shown to have a widerange of validity.In addition, the possibility of adjusting the transmit powerof each codeword individually is considered as an alternative tothe separate control of their rates. Power allocation, however,turns out to be inferior to rate control within the context of thisproblem.

Improving the efficiency of PV low-power processing circuits by selecting an optimal inductor current of the DC/DC converter

In the context of autonomous sensors powered by small-size photovoltaic (PV) panels, this work analyses how the efficiency of DC/DC-converter-based power processing circuits can be improved by an appropriate selection of the inductor current that transfers the energy from the PV panel to a storage unit. Each component of power losses (fixed, conduction and switching losses) involved in the DC/DC converter specifically depends on the average inductor current so that there is an optimal value of this current that causes minimal losses and, hence, maximum efficiency. Such an idea has been tested experimentally using two commercial DC/DC converters whose average inductor current is adjustable. Experimental results show that the efficiency can be improved up to 12% by selecting an optimal value of that current, which is around 300-350 mA for such DC/DC converters.