Glocalization as a generic entrepreneurial strategy

Nobody would deny that we today live in a globalized world. Our digitalized living daily revises our worldwide mindmaps. Thanks to free trade and travel our material and social worlds have become global as well. This radical sociocultural change has since the last decade been preached all over the world with public institutions and business-interest organizations as megaphones. Since those carrying the globalization message mainly represent nations or super-nations such as the EU, the viewpoints of lower-level actors such as regions, localities, firms and individual citizens have seldom been considered. Paternalistically (super-)national bodies have instructured its subjects, not the least the many small firms that populate the (private) economy, what action to take. The basic message is: submit to the global forces – local is not beautiful any longer.

Vacancy and interstitial depth profiles in ion-implanted silicon

An experimental method of studying shifts between concentration-versus-depth profiles of vacancy- and interstitial-type defects in ion-implanted silicon is demonstrated. The concept is based on deep level transient spectroscopy measurements utilizing the filling pulse variation technique. The vacancy profile, represented by the vacancy¿oxygen center, and the interstitial profile, represented by the interstitial carbon¿substitutional carbon pair, are obtained at the same sample temperature by varying the duration of the filling pulse. The effect of the capture in the Debye tail has been extensively studied and taken into account. Thus, the two profiles can be recorded with a high relative depth resolution. Using low doses, point defects have been introduced in lightly doped float zone n-type silicon by implantation with 6.8 MeV boron ions and 680 keV and 1.3 MeV protons at room temperature. The effect of the angle of ion incidence has also been investigated. For all implantation conditions the peak of the interstitial profile is displaced towards larger depths compared to that of the vacancy profile. The amplitude of this displacement increases as the width of the initial point defect distribution increases. This behavior is explained by a simple model where the preferential forward momentum of recoiling silicon atoms and the highly efficient direct recombination of primary point defects are taken into account.