Identificación de patologías causadas por el PVAc en Bienes Culturales

Esta contribución presenta el Proyecto de investigación que se está llevando a cabo en la Sección de Conservación¿Restauración de la Facultad de Bellas Artes de la Universidad de Barcelona desde el año 2006. El proyecto tiene por objetivo identificar los problemas que generan los tratamientos con PVAc, poliacetato de vinilo, en diversos bienes patrimoniales, así como el establecimiento de protocolos para la reversibilización del adhesivo. El trabajo se centra en los materiales de archivo, los materiales arqueológicos, la pinturasobre tela, sobre madera y la pintura mural por ser casos especialmente representativos de patrimonio en los que se ha utilizado este adhesivo y en los que se pueden detectar problemas derivados de su utilización. El estudio parte de la selección de obras originales procedentes de museos e instituciones colaboradoras que fueron tratadas con poliacetato de vinilo. De éstas obras se extrajeron muestras para caracterizar su composición y estado conservación. Una vez conocida la estructura de las obras se prepararon muestras probeta simulando las obras originales y se sometieron a un proceso de envejecimiento acelerado. A partir de estos simulacros se realizaron análisis para conocer los efectos derivados del uso del PVAc en tratamientos de conservación-restauración. Las técnicas de análisis empleadas fueron: medición de pH, espectroscopía de IR por transformada de Fourier (FTIR), análisis de pirolisis-cromatografía de gases / espectrometría de masas (Py-GC-MS), espectroscopia Raman por transformada de Fourier (FT-Raman), análisis de color, microscopía electrónica de barrido, espectroscopia de dispersión de rayos X (SEM-EDX) y microscopía óptica. Con la divulgación de los resultados acerca de la composición, pH, color, efectos del adhesivo sobre los soportes, propiedades mecánicas y reversibilización del adhesivo, obtenidos de las muestras probeta antes y después de la primera fase de envejecimiento acelerado, así como en unas muestras de adhesivos envejecidas de forma natural durante 10 años, se pretende fomentar la difusión y el intercambio de información entre los centros dedicados a la Conservación-Restauración del patrimonio.

Identificación de patologías causadas por el PVAc en Bienes Culturales

Esta contribución presenta el Proyecto de investigación que se está llevando a cabo en la Sección de Conservación¿Restauración de la Facultad de Bellas Artes de la Universidad de Barcelona desde el año 2006. El proyecto tiene por objetivo identificar los problemas que generan los tratamientos con PVAc, poliacetato de vinilo, en diversos bienes patrimoniales, así como el establecimiento de protocolos para la reversibilización del adhesivo. El trabajo se centra en los materiales de archivo, los materiales arqueológicos, la pinturasobre tela, sobre madera y la pintura mural por ser casos especialmente representativos de patrimonio en los que se ha utilizado este adhesivo y en los que se pueden detectar problemas derivados de su utilización. El estudio parte de la selección de obras originales procedentes de museos e instituciones colaboradoras que fueron tratadas con poliacetato de vinilo. De éstas obras se extrajeron muestras para caracterizar su composición y estado conservación. Una vez conocida la estructura de las obras se prepararon muestras probeta simulando las obras originales y se sometieron a un proceso de envejecimiento acelerado. A partir de estos simulacros se realizaron análisis para conocer los efectos derivados del uso del PVAc en tratamientos de conservación-restauración. Las técnicas de análisis empleadas fueron: medición de pH, espectroscopía de IR por transformada de Fourier (FTIR), análisis de pirolisis-cromatografía de gases / espectrometría de masas (Py-GC-MS), espectroscopia Raman por transformada de Fourier (FT-Raman), análisis de color, microscopía electrónica de barrido, espectroscopia de dispersión de rayos X (SEM-EDX) y microscopía óptica. Con la divulgación de los resultados acerca de la composición, pH, color, efectos del adhesivo sobre los soportes, propiedades mecánicas y reversibilización del adhesivo, obtenidos de las muestras probeta antes y después de la primera fase de envejecimiento acelerado, así como en unas muestras de adhesivos envejecidas de forma natural durante 10 años, se pretende fomentar la difusión y el intercambio de información entre los centros dedicados a la Conservación-Restauración del patrimonio.

Assessment of the discrimination of animal fat by FT_Raman spectroscopy

In recent years, there has been an increased attention towards the composition of feeding fats. In the aftermath of the BSE crisis all animal by-products utilised in animal nutrition have been subjected to close scrutiny. Regulation requires that the material belongs to the category of animal by-products fit for human consumption. This implies the use of reliable techniques in order to insure the safety of products. The feasibility of using rapid and non-destructive methods, to control the composition of feedstuffs on animal fats has been studied. Fourier Transform Raman spectroscopy has been chosen for its advantage to give detailed structural information. Data were treated using chemometric methods as PCA and PLS-DA which have permitted to separate well the different classes of animal fats. The same methodology was applied on fats from various types of feedstock and production technology processes. PLS-DA model for the discrimination of animal fats from the other categories presents a sensitivity and a specificity of 0.958 and 0.914, respectively. These results encourage the use of FT-Raman spectroscopy to discriminate animal fats.

X-ray diffraction, thermal analysis, and Raman scattering study of K2BeF4 and comparation to other member of the (beta)-K2SO4 family with ferroelectric -paraelectric transition

Thermal analysis, powder diffraction, and Raman scattering as a function of the temperature were carried out on K2BeF4. Moreover, the crystal structure was determined at 293 K from powder diffraction. The compound shows a transition from Pna21 to Pnam space group at 921 K with a transition enthalpy of 5 kJ/mol. The transition is assumed to be first order because the compound shows metastability. Structurally and spectroscopically the transition is similar to those observed in (NH4)2SO4, which suggests that the low-temperature phase is ferroelectric. In order to confirm it, the spontaneous polarization has been computed using an ionic model.

Raman microprobe characterization of electrodeposited S-rich CuIn(S,Se)2 for photovoltaic applications: Microstructural analysis

This article reports a detailed Raman scattering and microstructural characterization of S-rich CuIn(S,Se)2 absorbers produced by electrodeposition of nanocrystalline CuInSe2 precursors and subsequent reactive annealing under sulfurizing conditions. Surface and in-depth resolved Raman microprobe measurements have been correlated with the analysis of the layers by optical and scanning electron microscopy, x-ray diffraction, and in-depth Auger electron spectroscopy. This has allowed corroboration of the high crystalline quality of the sulfurized layers. The sulfurizing conditions used also lead to the formation of a relatively thick MoS2 intermediate layer between the absorber and the Mo back contact. The analysis of the absorbers has also allowed identification of the presence of In-rich secondary phases, which are likely related to the coexistence in the electrodeposited precursors of ordered vacancy compound domains with the main chalcopyrite phase, in spite of the Cu-rich conditions used in the growth. This points out the higher complexity of the electrodeposition and sulfurization processes in relation to those based in vacuum deposition techniques.

Micro-Raman study of stress distribution in local isolation structures and correlation with transmission electron microscopy

Stress in local isolation structures is studied by micro‐Raman spectroscopy. The results are correlated with predictions of an analytical model for the stress distribution and with cross‐sectional transmission electron microscopy observations. The measurements are performed on structures on which the Si3N4 oxidation mask is still present. The influence of the pitch of the periodic local isolation pattern, consisting of parallel lines, the thickness of the mask, and the length of the bird"s beak on the stress distribution are studied. It is found that compressive stress is present in the Si substrate under the center of the oxidation mask lines, with a magnitude dependent on the width of the lines. Large tensile stress is concentrated under the bird"s beak and is found to increase with decreasing length of the bird"s beak and with increasing thickness of the Si3N4 film.

Raman scattering and photoluminescence analysis of silicon on insulator structures obtained by single and multiple oxygen implants

An analysis of silicon on insulator structures obtained by single and multiple implants by means of Raman scattering and photoluminescence spectroscopy is reported. The Raman spectra obtained with different excitation powers and wavelengths indicate the presence of a tensile strain in the top silicon layer of the structures. The comparison between the spectra measured in both kinds of samples points out the existence in the multiple implant material of a lower strain for a penetration depth about 300 nm and a higher strain for higher penetration depths. These results have been correlated with transmission electron microscopy observations, which have allowed to associate the higher strain to the presence of SiO2 precipitates in the top silicon layer, close to the buried oxide. The found lower strain is in agreement with the better quality expected for this material, which is corroborated by the photoluminescence data.

Measurement and simulation of anisotropy in the Infrared and Raman spectra of beta-FeSi2 single crystals

In this paper we show that the orthorhombic phase of FeSi2 (stable at room temperature) displays a sizable anisotropy in the infrared spectra, with minor effects in the Raman data too. This fact is not trivial at all, since the crystal structure corresponds to a moderate distortion of the fluorite symmetry. Our analysis is carried out on small single crystals grown by flux transport, through polarization-resolved far-infrared reflectivity and Raman measurements. Their interpretation has been obtained by means of the simulated spectra with tight-binding molecular dynamics.

Raman scattering of InSb quantum dots grown on InP substrates

In this paper we present the Raman scattering of self-assembled InSb dots grown on (001) oriented InP substrates. The samples were grown by pulsed molecular beam epitaxy mode. Two types of samples have been investigated. In one type the InSb dots were capped with 200 monolayers of InP; in the other type no capping was deposited after the InSb dot formation. We observe two peaks in the Raman spectra of the uncapped dot, while only one peak is observed in the Raman spectra of the capped dots. In the case of the uncapped dots the peaks are attributed to LO-like and TO-like vibration of completely relaxed InSb dots, in agreement with high resolution transmission electron microscopy photographs. The Raman spectra of the capped dot suggest a different strain state in the dot due to the capping layer.

Raman microstructural analysis of silicon-on-insulator formed by high dose oxygen ion implantation: As-implanted structures

A microstructural analysis of silicon-on-insulator samples obtained by high dose oxygen ion implantation was performed by Raman scattering. The samples analyzed were obtained under different conditions thus leading to different concentrations of defects in the top Si layer. The samples were implanted with the surface covered with SiO2 capping layers of different thicknesses. The spectra measured from the as-implanted samples were fitted to a correlation length model taking into account the possible presence of stress effects in the spectra. This allowed quantification of both disorder effects, which are determined by structural defects, and residual stress in the top Si layer before annealing. These data were correlated to the density of dislocations remaining in the layer after annealing. The analysis performed corroborates the existence of two mechanisms that generate defects in the top Si layer that are related to surface conditions during implantation and the proximity of the top Si/buried oxide layer interface to the surface before annealing.

The complete Raman spectrum of nanometric SnO2 particles

The complete Raman spectrum of SnO2 nanoparticles in presented and analyzed. In addition to the "classical" modes observed in the rutile structure, two other regions shown Raman activity for nanoparticles. The Raman bands in the low-frequency region are attributed to acoustic modes associated with the vibration of the individual nanoparticle as a whole. The high-frequency region is activated by surface disorder. A detailed analysis of these regions and the changes in the normal modes of SnO2 are presented as a function nanoparticle size.

Multipole modes and spin features in the Raman spectrum of nanoscopic quantum rings

We present a systematic study of ground state and spectroscopic properties of many-electron nanoscopic quantum rings. Addition energies at zero magnetic field (B) and electrochemical potentials as a function of B are given for a ring hosting up to 24 electrons. We find discontinuities in the excitation energies of multipole spin and charge density modes, and a coupling between the charge and spin density responses that allow to identify the formation of ferromagnetic ground states in narrow magnetic field regions. These effects can be observed in Raman experiments, and are related to the fractional Aharonov-Bohm oscillations of the energy and of the persistent current in the ring

Polymorphous Si thin films from radio frequency plasmas of SiH4 diluted in Ar: A study by transmission electron microscopy and Raman spectroscopy

In this study, we present a detailed structural characterization by means of transmission electron microscopy and Raman spectroscopy of polymorphous silicon (pm-Si:H) thin films deposited using radio-frequency dust-forming plasmas of SiH4 diluted in Ar. Square-wave modulation of the plasma and gas temperature was varied to obtain films with different nanostructures. Transmission electron microscopy and electron diffraction have shown the presence of Si crystallites of around 2 nm in the pm-Si:H films, which are related to the nanoparticles formed in the plasma gas phase coming from their different growth stages, named particle nucleation and coagulation. Raman scattering has proved the role of the film nanostructure in the crystallization process induced ¿in situ¿ by laser heating.

X-ray diffraction, thermal analysis, and Raman scattering study of K2BeF4 and comparation to other member of the (beta)-K2SO4 family with ferroelectric -paraelectric transition

Thermal analysis, powder diffraction, and Raman scattering as a function of the temperature were carried out on K2BeF4. Moreover, the crystal structure was determined at 293 K from powder diffraction. The compound shows a transition from Pna21 to Pnam space group at 921 K with a transition enthalpy of 5 kJ/mol. The transition is assumed to be first order because the compound shows metastability. Structurally and spectroscopically the transition is similar to those observed in (NH4)2SO4, which suggests that the low-temperature phase is ferroelectric. In order to confirm it, the spontaneous polarization has been computed using an ionic model.

Raman spectroscopy as a powerful analytical tool: probing the structure of matter

Podeu consultar el llibre complet a: http://hdl.handle.net/2445/32166