Diseño del subsistema RF para el receptor SAR biestático en banda-C SABRINA

Este proyecto tiene como objetivo diseñar un nuevo receptor SAR biestático para el sistema SABRINA (SAR Bistatic fixed Receiver for INterferometric Applications) caracterizando el sistema que ya existía. El nuevo dispositivo deberá cumplir con las características y requisitos del escenario teniendo en cuenta la potencia recibida y el ruido de cuantificación de la tarjeta digitalizadora. Con este fin se introducen previamente conocimientos de teoría RADAR y SAR. Además, se deberá compactar al máximo el sistema para conseguir un receptor autocontenido que facilite su traslado. Para tal fin se ha incorporado a la caja del receptor un sintetizador programable que actúa de oscilador local de las cadenas de recepción y una fuente de alimentación que provee la tensión a todos los componentes activos del dispositivo. Por otra parte el proyecto ilustra las diferentes campañas de experimentos que se han realizado durante el periodo de trabajo.

Métodos de extracción de parámetros de un circuito equivalente de pequeña señal para transistores LDMOS de potencia para aplicaciones de RF

En la actualidad, la gran cantidad de aplicaciones que surgen dentro del ámbito de la radiofrecuencia hacen que el desarrollo de dispositivos dentro de este campo sea constante. Estos dispositivos cada vez requieren mayor potencia para frecuencias de trabajo elevadas, lo que sugiere abrir vías de investigación sobre dispositivos de potencia que ofrezcan los resultados deseados para altas frecuencias de operación (GHz). Dentro de este ámbito, el objetivo principal de este proyecto es el de realizar un estudio sobre este tipo de dispositivos, siendo el transistor LDMOS el candidato elegido para tal efecto, debido a su buen comportamiento en frecuencia para tensiones elevadas de funcionamiento.

Disseny i caracterització d'estructures RF amb printed electronics per a RFID

En els últims anys printed electronics està aixecant un gran interès entre la indústria electrònica. Aquest tipus de procés consisteix en imprimir circuits amb tècniques d'impressió convencionals utilitzant tintes conductores, resistives, dielèctriques o semiconductores sobre substrats flexibles de baix cost com paper o plàstic. Fer servir aquestes tècniques s'espera que suposi una reducció dels costos de producció degut a que és un procés totalment additiu el que fa que sigui més senzill i es redueixi la quantitat de material emprat. El disseny de dispositius bàsics com resistències, condensadors i bobines per posteriorment veure la relació entre simulacions i valors obtinguts ha ocupat la primera part del projecte. La segona s’ha centrat en fer prototips d’antenes per a RFID (Radio Frequency IDentification) amb la tecnologia que es disposa a CEPHIS (Centre de Prototips i Solucions Hardwre-Software). Tot això ha servit per caracteritzar la tecnologia de la que es disposa i saber en quins apartats s’ha de seguir treballant per aconseguir millors prestacions.

El mercado laboral español : un análisis comparativo con Alemania y Estados Unidos

L’economia espanyola s’ha vist especialment afectada per la recent crisis: encara que la caiguda de l’activitat productiva ha estat més aviat lleu, la taxa d’atur s’ha disparat fins a nivells per damunt el 20%. Això manifesta una altíssima sensibilitat de l’ocupació davant variacions de la producció, motivada per un mal ajustament del mercat laboral quan es produeixen pertorbacions a l’economia. En contraposició, l’atur no ha augmentat en excés a Alemanya i Estats Units, malgrat haver sofert caigudes de la producció bastant significatives. Això ha estat possible gràcies a una sòlida estructura econòmica i a una gran flexibilitat del mercat. Una de les claus es troba a que, mentre Alemanya i Estats Units aconsegueixen mantenir una economia altament competitiva basada en l’industria amb un alt grau d’intensitat tecnològica i en els serveis especialitzats, el model productiu espanyol es basa en activitats intensives en mà d’obra i de baixa productivitat. No obstant, encara que el model productiu associat a activitats de baixa productivitat és el principal causant de la falta de competitivitat empresarial i la volatilitat de l’ocupació, existeixen altres elements que introdueixen rigiditats i ineficiències al mercat laboral espanyol, com la distorsió als nivells educatius, l’alta temporalitat, la rigiditat salarial, l’elevat cost de l’acomiadament i la ineficàcia del contracte a temps parcial.

Non-invasive RF built-in testing using on-chip temperature sensors

This poster shows how to efficiently observe high-frequency figures of merit in RF circuits by measuring DC temperature with CMOS-compatible built-in sensors.

La reforma del derecho de sucesiones y de la prescripción en Alemania

Los cambios sociales, y, en particular, las nuevas formas de organización familiar, han dado lugar a una modificación del Derecho de sucesiones en Alemania, sobre todo, en la regulación de la legítima. La reforma sigue las pautas marcadas en la Sentencia del BVerfG de 19 de abril de 2005, que considera la legítima de los descendientes como un derecho constitucionalmente protegido y, por tanto, por regla general el testador no puede excluirla ni hacer depender de una situación de necesidad del legitimario. Otras modificaciones afectan a la prescripción de las pretensiones familiares y sucesorias.

A physical frequency-dependent compact model for RF integrated inductors

A frequency-dependent compact model for inductors in high ohmic substrates, which is based on an energy point-of-view, is developed. This approach enables the description of the most important coupling phenomena that take place inside the device. Magnetically induced losses are quite accurately calculated and coupling between electric and magnetic fields is given by means of a delay constant. The later coupling phenomenon provides a modified procedure for the computation of the fringing capacitance value, when the self-resonance frequency of the inductor is used as a fitting parameter. The model takes into account the width of every metal strip and the pitch between strips. This enables the description of optimized layout inductors. Data from experiments and electromagnetic simulators are presented to test the accuracy of the model.

Improvement of the quality factor of RF integrated inductors by layout optimization

A systematic method to improve the quality (Q) factor of RF integrated inductors is presented in this paper. The proposed method is based on the layout optimization to minimize the series resistance of the inductor coil, taking into account both ohmic losses, due to conduction currents, and magnetically induced losses, due to eddy currents. The technique is particularly useful when applied to inductors in which the fabrication process includes integration substrate removal. However, it is also applicable to inductors on low-loss substrates. The method optimizes the width of the metal strip for each turn of the inductor coil, leading to a variable strip-width layout. The optimization procedure has been successfully applied to the design of square spiral inductors in a silicon-based multichip-module technology, complemented with silicon micromachining postprocessing. The obtained experimental results corroborate the validity of the proposed method. A Q factor of about 17 have been obtained for a 35-nH inductor at 1.5 GHz, with Q values higher than 40 predicted for a 20-nH inductor working at 3.5 GHz. The latter is up to a 60% better than the best results for a single strip-width inductor working at the same frequency.

Ellipsometric study of a-Si:H thin films deposited by square wave modulated rf glow discharge

Thin films of hydrogenated amorphous silicon (a‐Si:H), deposited by square wave modulated (SQWM) rf silane discharges, have been studied through spectroscopic and real time phase modulated ellipsometry. The SQMW films obtained at low mean rf power density (19 mW/cm2) have shown smaller surface roughness than those obtained in standard continuous wave (cw) rf discharges. At higher rf powers (≥56 mW/cm2), different behaviors depending on the modulating frequency have been observed. On the one hand, at low modulating frequencies (<40 Hz), the SQWM films have shown a significant increase of porosity and surface roughness as compared to cw samples. On the other, at higher modulating frequencies, the material density and roughness have been found to be similar in SQWM and cw films. Furthermore, the deposition rate of the films show more pronounced increases with the modulating frequency as the rf power is increased. Experimental results are discussed in terms of plasma negative charged species which can be relatively abundant in high rf power discharges and cause significant effects on the deposited layers through polymers, clusters, and powder formation.

Effect of substrate temperature on deposition rate of rf plasma-deposited hydrogenated amorphous silicon thin films

We present a study about the influence of substrate temperature on deposition rate of hydrogenated amorphous silicon thin films prepared by rf glow discharge decomposition of pure silane gas in a capacitively coupled plasma reactor. Two different behaviors are observed depending on deposition pressure conditions. At high pressure (30 Pa) the influence of substrate temperature on deposition rate is mainly through a modification of gas density, in such a way that the substrate temperature of deposition rate is similar to pressure dependence at constant temperature. On the contrary, at low pressure (3 Pa), a gas density effect cannot account for the observed increase of deposition rate as substrate temperature rises above 450 K with an activation energy of 1.1 kcal/mole. In accordance with laser‐induced fluorescence measurements reported in the literature, this rise has been ascribed to an increase of secondary electron emission from the growing film surface as a result of molecular hydrogen desorption.

Particle agglomeration study in rf silane plasmas: In situ study by polarization-sensitive laser light scattering

To determine self‐consistently the time evolution of particle size and their number density in situ multi‐angle polarization‐sensitive laser light scattering was used. Cross‐polarization intensities (incident and scattered light intensities with opposite polarization) measured at 135° and ex situ transmission electronic microscopy analysis demonstrate the existence of nonspherical agglomerates during the early phase of agglomeration. Later in the particle time development both techniques reveal spherical particles again. The presence of strong cross‐polarization intensities is accompanied by low‐frequency instabilities detected on the scattered light intensities and plasma emission. It is found that the particle radius and particle number density during the agglomeration phase can be well described by the Brownian free molecule coagulation model. Application of this neutral particle coagulation model is justified by calculation of the particle charge whereby it is shown that particles of a few tens of nanometer can be considered as neutral under our experimental conditions. The measured particle dispersion can be well described by a Brownian free molecule coagulation model including a log‐normal particle size distribution.

Influence of RF power on the properties of sputtered ZnO:Al thin films

Transparent conducting, aluminium doped zinc oxide thin films (ZnO:Al) were deposited by radio frequency (RF) magnetron sputtering. The RF power was varied from 60 to 350Wwhereas the substrate temperature was kept at 160 °C. The structural, electrical and optical properties of the as-deposited films were found to be influenced by the deposition power. The X-ray diffraction analysis showed that all the films have a strong preferred orientation along the [001] direction. The crystallite size was varied from 14 to 36 nm, however no significant change was observed in the case of lattice constant. The optical band gap varied in the range 3.44-3.58 eV. The lowest resistivity of 1.2×10 -3Vcm was shown by the films deposited at 250 W. The mobility of the films was found to increase with the deposition power.

Effect of the nanoparticles on the structure and crystallization of amorphous silicon thin films produced by rf glow discharge

Thin films of nanostructured silicon (ns-Si:H) were deposited by plasma-enhanced chemical vapor deposition in the presence of silicon nanoparticles at 100 C substrate temperature using silane and hydrogen gas mixture under continuous wave (cw) plasma conditions. The nanostructure of the films has been demonstrated by diverse ways: transmission electron microscopy, Raman spectroscopy and x-ray diffraction, which have shown the presence of ordered silicon clusters (1!=2 nm) embedded in an amorphous silicon matrix. Due to the presence of these ordered domains, the films crystallize faster than standard hydrogenated amorphous silicon samples, as evidenced by electrical measurements during the thermal annealing.

Fachkräftemangel in Deutschland - Traducción de un informe del Bundestag sobre la falta de mano de obra cualificada en Alemania

El presente trabajo consiste en la traducción y el análisis de un informe sobre la falta de mano de obra cualificada en Alemania publicado en 2012 por el Bundestag. A partir del texto traducido se analizan varios problemas léxicos y gramaticales de la traducción entre el alemán y el español.