115 resultados para War films


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Why we fight és un grup de set pel·lícules de format documental que van formar part d’un ampli programa d’informació, formació i propaganda impulsat per l’exèrcit nord-americà, en el moment en què els Estats Units ja s’havien implicat en la Segona Guerra Mundial. És també un dels més reeixits exercicis de retòrica cinematogràfica nord-americana d’aquell període que permet analitzar com els països democràtics van gestionar qüestions tan compromeses com la propaganda de guerra. La pretensió d’aquest treball de recerca és aprofundir en la complexitat ideològica i formal de la sèrie, que faci possible descobrir-ne els orígens, els objectius i la manera com aquests van ser assolits per un grup d’especialistes cinematogràfics, coordinats pel director Frank Capra, tots els quals havien triomfat fins llavors a Hollywood

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Structural and optical characterization of copper phthalocyanine thin film thermally deposited at different substrate temperatures was the aim of this work. The morphology of the films shows strong dependence on temperature, as can be observed by atomic force microscopy and x-ray diffraction spectroscopy, specifically in the grain size and features of the grains. The increase in the crystal phase with substrate temperature is shown by x-ray diffractometry. Optical absorption coefficient measured by photothermal deflection spectroscopy and optical transmittance reveal a weak dependence on the substrate temperature. Besides, the electro-optical response measured by the external quantum efficiency of Schottky ITO/CuPc/Al diodes shows an optimized response for samples deposited at a substrate temperature of 60 °C, in correspondence to the I-V diode characteristics.

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Con la implicación definitiva de los Estados Unidos en la Segunda Guerra Mundial, el gobierno y el alto mando militar decidieron impulsar un amplio programa audiovisual que utilizando la letra impresa, la radio y el cine intentaría explicar –principalmente, aunque no exclusivamente, a millares de civiles reclutados para la ocasión– el porqué de la guerra y la necesaria implicación de los Estados Unidos en la contienda. Naturalmente, a esta voluntad pedagógica se unía otra propagandística. Por lo que respecta al cine, y contando con los destacados antecedentes del cine soviético y las producciones cinematográficas del régimen nazi, se decidió poner en marcha un exhaustivo programa para la producción cinematográfica de documentales que cubriría estos dos aspectos esenciales: el formativo y el propagandístico –bautizado, eufemísticamente, como “orientación moral”. De entre las producciones cinematográficas de orientación moral, impulsadas por el ejército, destaca, por su ambición y calidad intrínseca, una serie de siete documentales presentada bajo el título genérico de Why We Fight

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We report on the growth of epitaxial YBa2Cu3O7 thin films on X-cut LiNbO3 single crystals. The use of double CeO2/YSZ buffer layers allows a single in-plane orientation of YBa2Cu3O7, and results in superior superconducting properties. In particular, surface resistance Rs values of 1.4 m¿ have been measured at 8 GHz and 65 K. The attainment of such low values of Rs constitutes a key step toward the incorporation of high Tc materials as electrodes in photonic and acoustic devices.

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In this work annealing and growth of CuInS2 thin films is investigated with quasireal-time in situ Raman spectroscopy. During the annealing a shift of the Raman A1 mode towards lower wave numbers with increasing temperature is observed. A linear temperature dependence of the phonon branch of ¿2 cm¿1/100 K is evaluated. The investigation of the growth process (sulfurization of metallic precursors) with high surface sensitivity reveals the occurrence of phases which are not detected with bulk sensitive methods. This allows a detailed insight in the formation of the CuInS2 phases. Independent from stoichiometry and doping of the starting precursors the CuAu ordering of CuInS2 initially forms as the dominating ordering. The transformation of the CuAu ordering into the chalcopyrite one is, in contrast, strongly dependent on the precursor composition and requires high temperatures.

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El presente artículo analiza algunos aspectos de los métodos de formación y propaganda destinados a los sol-dados del ejército estadounidense al enfrentarse a la implicación de su país en la Segunda Guerra Mundial. El general George C. Marshall, jefe del alto mando militar, pretendía oponer a los anticuados métodos de instruc-ción basados en la fuerza del hábito corporal, la fuerza del hábito mental. Esta pretensión supuso desplegar un amplio programa que contemplaba, además de la instrucción militar, la formación intelectual y que contaba, para ello, entre otros recursos, con el cine. En este último ámbito, destacó la producción de la serie documen-tal de siete episodios “Why We Fight”. La serie, desde su mismo título, pareció apostar por la argumentación racional antes que por la emocional, para hacer comprensible, a los soldados, la implicaciónde Estados Unidos en la contienda mundial. Sin embargo, más allá de su apariencia retórica, la serie debía funcionar como un efectivo mecanismo de propaganda a favor de los intereses estratégicos del país norteamericano

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The presence of hydrogen in polysilicon films obtained at low temperatures by hot-wire CVD and the post-deposition oxidation by air-exposure of the films are studied in this paper. The experimental results from several characterization techniques (infrared spectroscopy, X-ray photoelectron spectroscopy, secondary ion mass spectrometry and wavelength dispersive spectroscopy) showed that hydrogen and oxygen are homogeneously distributed at grain boundaries throughout the depth of the films. Hydrogen is introduced during the growth process and its concentration is higher in samples deposited at lower temperatures. Oxygen diffuses along the grain boundaries and binds to silicon atoms, mainly in Si 2O groups.

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Visible up-conversion in ZnO:Er and ZnO:Er:Yb thin films deposited by RF magnetron sputtering under different O2-rich atmospheres has been studied. Conventional photoluminescence (325 nm laser source) and up-conversion (980 nm laser source) have been performed in the films before and after an annealing process at 800 °C. The resulting spectra demonstrate that the thermal treatment, either during or post-deposition, activates optically the Er3+ ions, being the latter process much more efficient. Moreover, the atmosphere during deposition was also found to be an important parameter, as the deposition under O2 flow increases the optical activity of Er+3 ions. In addition, the inclusion of Yb3+ ions into the films has shown an enhancement of the visible up-conversion emission at 660 nm by a factor of 4, which could be associated to either a better energy transfer from the 2F5/2 Yb level to the 4I11/2 Er one, or to the prevention of having Er2O3 clustering in the films.

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This paper analyzes the role of formalization of land property rights in the war against illicit crops in Colombia. We argue that as a consequence of the increase of state presence and visibility during the period of 2000 and 2009, municipalities with a higher level of formalization of their land property rights saw a greater reduction in the area allocated to illicit crops. We hypothesize that this is due to the increased cost of growing illicit crops on formal land compared to informal, and due to the possibility of obtaining more benets in the newly in- stalled institutional environment when land is formalized. We exploit the variation in the level of formalization of land property rights in a set of municipalities that had their rst cadastral census collected in the period of 1994-2000; this selection procedure guarantees reliable data and an unbiased source of variation. Using fixed effects estimators, we found a signicant negative relationship between the level of formalization of land property rights and the number of hectares allocated to coca crops per municipality. These results remain robust through a number of sensitivity analyses. Our ndings contribute to the growing body of evidence on the positive effects of formal land property rights, and e ective policies in the war on drugs in Colombia.

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This paper aims to illustrate the dynamics of coal trade between Latin America and its main trade partners, i.e., the USA, Great Britain, and Germany, before and after the enormous disruption caused by the First World War. The coal trade was used as an indicator of modernization for Latin American countries, given that oil was at that time of secondary importance. Energy imports have determined the possibilities of each Latin American country in its process of development. Here, we address this question and place special emphasis on supply channels, concluding that the trade link with main suppliers was of key significance. Although this was very clear by the end of the period, the process had started well before the First World War, at least for the majority of LA&C countries. These points are developed through a gravity model applied to the bilateral coal trade. The importance of the market supplier share is addressed through cluster methodologies.

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We have studied the current transport and electroluminescence properties of metal oxide semiconductor MOS devices in which the oxide layer, which is codoped with silicon nanoclusters and erbium ions, is made by magnetron sputtering. Electrical measurements have allowed us to identify a Poole-Frenkel conduction mechanism. We observe an important contribution of the Si nanoclusters to the conduction in silicon oxide films, and no evidence of Fowler-Nordheim tunneling. The results suggest that the electroluminescence of the erbium ions in these layers is generated by energy transfer from the Si nanoparticles. Finally, we report an electroluminescence power efficiency above 10−3%. © 2009 American Institute of Physics. doi:10.1063/1.3213386

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The electrical properties of heavily In‐doped polycrystalline CdS films have been studied as a function of the doping level. The films were prepared by vacuum coevaporation of CdS and In. Conductivity and Hall measurements were performed over the temperature range 77-400 K. The conductivity decreases weakly with the temperature and shows a tendency towards saturation at low temperatures. A simple relationship σ=σ0(1+βT2) is found in the low‐temperature range. The temperature dependence of the mobility is similar to that of the conductivity since the Hall coefficient is found to be a constant in the whole temperature range. We interpret the experimental results in terms of a modified version of grain‐boundary trapping Seto"s model, taking into account thermionic emission and tunneling of carriers through the potential barriers. The barriers are found to be high and narrow, and tunneling becomes the predominating transport mechanism.

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Hydrogenated amorphous silicon (a‐Si:H) thin films have been obtained from pure SiH4 rf discharges by using the square wave modulation (SQWM) method. Film properties have been studied by means of spectroellipsometry, thermal desorption spectrometry, photothermal deflection spectroscopy and electrical conductivity measurements, as a function of the modulation frequency of the rf power amplitude (0.2-4000 Hz). The films deposited at frequencies about 1 kHz show the best structural and optoelectronic characteristics. Based upon the experimental results, a qualitative model is presented, which points up the importance of plasma negative ions in the deposition of a‐Si:H from SQWM rf discharges through their influence on powder particle formation.

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In this study, (011)-highly oriented Sr, Nb co-doped BiFeO3 (BFO) thin films were successfully grown on SrRuO3/Si substrates by rf-magnetron sputtering. The presence of parasite magnetic phases was ruled out based on the high resolution x-ray diffraction data. BFO films exhibited a columnar-like grain growth with rms surface roughness values of 5.3 nm and average grain sizes of 65-70 nm for samples with different thicknesses. Remanent polarization values (2Pr) of 54 lC cm 2 at room temperature were found for the BFO films with a ferroelectric behavior characteristic of an asymmetric device structure. Analysis of the leakage mechanisms for this structure in negative bias suggests Schottky injection and a dominant Poole-Frenkel trap-limited conduction at room temperature. Oxygen vacancies and Fe3þ/Fe2þ trap centers are consistent with the surface chemical bonding states analysis from x-ray photoelectron spectroscopy data. The (011)-BFO/ SrRuO3/Si film structure exhibits a strong magnetic interaction at the interface between the multiferroic film and the substrate layer where an enhanced ferromagnetic response at 5 K was observed. Zero-field cooled (ZFC) and field cooled (FC) magnetization curves of this film system revealed a possible spin glass behavior at spin freezing temperatures below 30 K depending on the BFO film thickness.

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We have studied the abrupt and hysteretic changes of resistance in MgO-based capacitor devices. The switching behavior is discussed in terms of the formation and rupture of conduction filaments due to the migration of structural defects in the electric field, together with the redox events which affects the mobile carriers. The results presented in this paper suggest that MgO transparent films combining ferromagnetism and multilevel switching characteristics might pave the way for a new method for spintronic multibit data storage.