Comensalitat durant el bronze final i la primera edat del ferro al paratge arqueològic de Can Roqueta: anàlisi dels dipòsits relacionats amb el consum en contextos domèstics i funeraris

La reconstrucció de les pautes de consum d"aliments durant el bronze final i la primera edat de ferro, tant si són de caire domèstic com si no, passa per un anàlisi exhaustiu de les diferents dades arqueològiques. En primer lloc, tenim els espais destinats al consum. Les circumstàncies pròpies del registre arqueològic a Catalunya durant aquests períodes fa que, depèn del territori, aquest nivell d"anàlisi sigui més o menys evident. Així, en territoris on existeix una tradició arquitectònica en pedra i, fins i tot, dissenys urbanístics ben definits (entorn del Segre i l"Ebre), aquest problema resulta relativament fàcil de tractar en funció de la conservació de la resta d"elements i la particularitat de les estructures analitzades. Això ha permès caracteritzar certes pràctiques.de consum diferenciades del que podria ser propi d"un àmbit domèstic en jaciments com Barranc de Gàfols (habitacions 1 y 2), la Moleta del Remei (habitació 7), Tossal Redó (habitació 1), San Cristóbal (habitació 2), Sant Jaume Mas d"en Serrà (habitacions 3 i 4), l"edifici de Turó del Calvari de Vilalba dels Arcs o Genó (habitació 2) (Lucas 1989; López Cachero 1998; Sanmartí et al. 2000; Fatás 2004-05; Garcia 2005; Sardà 2008). Aquesta situació contrasta amb el que passa a la resta del litoral català on les estructures negatives són pràcticament l"única evidència del poblament existent i on resulta molt complicat, fins i tot, la documentació de qualsevol espai habitacional que ens permeti avançar en aquesta direcció.

Uso de e-books en bibliotecas universitarias de Estados Unidos: datos para salir del"Big Mess"

Reseña de: 2012 survey of ebook usage in U.S. academic libraries: third annual survey. LJ/SLJ Library Research Syndicate (LRS). [New York, N.Y.]: Library Journal, 2012. 93 p. Disponible en línea en: [consulta: 14 nov. 2012].

Surface passivation of crystalline silicon by Cat-CVD amorphous and nanocrystalline thin silicon films

In this work, we study the electronic surface passivation of crystalline silicon with intrinsic thin silicon films deposited by Catalytic CVD. The contactless method used to determine the effective surface recombination velocity was the quasi-steady-state photoconductance technique. Hydrogenated amorphous and nanocrystalline silicon films were evaluated as passivating layers on n- and p-type float zone silicon wafers. The best results were obtained with amorphous silicon films, which allowed effective surface recombination velocities as low as 60 and 130 cms -1 on p- and n-type silicon, respectively. To our knowledge, these are the best results ever reported with intrinsic amorphous silicon films deposited by Catalytic CVD. The passivating properties of nanocrystalline silicon films strongly depended on the deposition conditions, especially on the filament temperature. Samples grown at lower filament temperatures (1600 °C) allowed effective surface recombination velocities of 450 and 600 cms -1 on n- and p-type silicon.

Stability of hydrogenated nanocrystalline silicon thin-film transistors

Hydrogenated nanocrystalline silicon thin-films were obtained by catalytic chemical vapour deposition at low substrate temperatures (150°C) and high deposition rates (10 Å/s). These films, with crystalline fractions over 90%, were incorporated as the active layers of bottom-gate thin-film transistors. The initial field-effect mobilities of these devices were over 0.5 cm 2/V s and the threshold voltages lower than 4 V. In this work, we report on the enhanced stability of these devices under prolonged times of gate bias stress compared to amorphous silicon thin-film transistors. Hence, they are promising candidates to be considered in the future for applications such as flat-panel displays.

Optoelectronic studies in nanocrystalline silicon Schottky diodes obtained by Hot-Wire Chemical Vapour Deposition

The very usual columnar growth of nanocrystalline silicon leads to electronic transport anisotropies. Whereas electrical measurements with coplanar electrodes only provide information about the electronic transport parallel to the substrate, it is the transverse transport which determines the collection efficiency in thin film solar cells. Hence, Schottky diodes on transparent electrodes were obtained by hot-wire CVD in order to perform external quantum efficiency and surface photovoltage studies in sandwich configuration. These measurements allowed to calculate a transverse collection length, which must correlate with the photovoltaic performance of thin film solar cells. Furthermore, the density of charge trapped at localized states in the bandgap was estimated from the voltage dependence of the depletion capacitance of these rectifying contacts.

Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors

In this work, zinc indium tin oxide layers with different compositions are used as the active layer of thin film transistors. This multicomponent transparent conductive oxide is gaining great interest due to its reduced content of the scarce indium element. Experimental data indicate that the incorporation of zinc promotes the creation of oxygen vacancies. In thin-film transistors this effect leads to a higher threshold voltage values. The field-effect mobility is also strongly degraded, probably due to coulomb scattering by ionized defects. A post deposition annealing in air reduces the density of oxygen vacancies and improves the fieldeffect mobility by orders of magnitude. Finally, the electrical characteristics of the fabricated thin-film transistors have been analyzed to estimate the density of states in the gap of the active layers. These measurements reveal a clear peak located at 0.3 eV from the conduction band edge that could be attributed to oxygen vacancies.

Estudios de los restos vegetales de diversas muestras procedentes del abrigo de Son Gallard- Son Marroig: el resultado de los analisis de fitolitos.

[spa] Los fitólitos son microrestos síliceos que reproducen el tejido celular de las plantas. Su identificación y cuantificación en un yacimiento arqueológico permiten obtener información sobre el tipo de plantas utilizadas en un contexto determinado así como su distribución. Fueron realizados análisis de fitolitos en diversos niveles correspondientes a diferentes períodos cronológicos del abrigo de Son Gallard-Son Marroig. Los resultados obtenidos señalan una deposición de carácter «antrópico» de materia vegetal en dos de los niveles analizados (TB3 y UE5), aunque sin una selección aparente del tipo de plantas depositadas. Por otro lado las muestras analizadas de la Covacha Este parecen indicar que se trata del suelo de hábitat del abrigo sin una deposición intencionada de materia vegetal, mas allá de la derivada por el uso continuado del abrigo. [eng] Phytoliths are silica microremains that reproduce the cellular tissue of plants. The identification and quantification of phytoliths in archaeological sediments, allows for a better understanding of the utilised plants in a pecific area as well as the distribution of the plants used. Phytolith analyses were performed on different levels from different periods in Son Gallard-Son Marroig rockshelter. The results obtained show an «anthropological» deposition of plants in two of the studied levels (TB3 and UE5), without apparent selection of plants. On the other hand, the samples analyzed from the Covacha Este seem to indicate the presence of vegetal remains product of the continued use of the soils with no intentional deposition.

Electronic transport in low temperature nanocrystalline silicon thin-film transistors obtained by Hot-Wire CVD

Hydrogenated nanocrystalline silicon (nc-Si:H) obtained by hot-wire chemical vapour deposition (HWCVD) at low substrate temperature (150 °C) has been incorporated as the active layer in bottom-gate thin-film transistors (TFTs). These devices were electrically characterised by measuring in vacuum the output and transfer characteristics for different temperatures. The field-effect mobility showed a thermally activated behaviour which could be attributed to carrier trapping at the band tails, as in hydrogenated amorphous silicon (a-Si:H), and potential barriers for the electronic transport. Trapped charge at the interfaces of the columns, which are typical in nc-Si:H, would account for these barriers. By using the Levinson technique, the quality of the material at the column boundaries could be studied. Finally, these results were interpreted according to the particular microstructure of nc-Si:H.

Microcrystalline silicon thin film transistors obtained by Hot-Wire CVD

Polysilicon thin film transistors (TFT) are of great interest in the field of large area microelectronics, especially because of their application as active elements in flat panel displays. Different deposition techniques are in tough competition with the objective to obtain device-quality polysilicon thin films at low temperature. In this paper we present the preliminary results obtained with the fabrication of TFT deposited by hot-wire chemical vapor deposition (HWCVD). Some results concerned with the structural characterization of the material and electrical performance of the device are presented.

Thin Film Transistors obtained by Hot-Wire CVD

Hydrogenated microcrystalline silicon films obtained at low temperature (150-280°C) by hot wire chemical vapour deposition at two different process pressures were measured by Raman spectroscopy, X-ray diffraction (XRD) spectroscopy and photothermal deflection spectroscopy (PDS). A crystalline fraction >90% with a subgap optical absortion 10 cm -1 at 0.8 eV were obtained in films deposited at growth rates >0.8 nm/s. These films were incorporated in n-channel thin film transistors and their electrical properties were measured. The saturation mobility was 0.72 ± 0.05 cm 2/ V s and the threshold voltage around 0.2 eV. The dependence of their conductance activation energies on gate voltages were related to the properties of the material.

De Andrew Carnegie a OverDrive, Amazon y ¿algo más? Biblioteca pública y préstamo de libros digitales en Estados Unidos

Ressenya de: 2012 survey of ebook usage in U.S. public libraries: third annual survey. LJ/SLJ Library Research Syndicate (LRS). [New York, N.Y.]: Library Journal, 2012. 108 p. Disponible en línia a: [Consulta: 27 feb. 2013].

Microdoping compensation of microcrystalline silicon obtained by Hot-Wire Chemical Vapour Deposition

Undoped hydrogenated microcrystalline silicon was obtained by hot-wire chemical vapour deposition at different silane-to-hydrogen ratios and low temperature (<300 °C). As well as technological aspects of the deposition process, we report structural, optical and electrical characterizations of the samples that were used as the active layer for preliminary p-i-n solar cells. Raman spectroscopy indicates that changing the hydrogen dilution can vary the crystalline fraction. From electrical measurements an unwanted n-type character is deduced for this undoped material. This effect could be due to a contaminant, probably oxygen, which is also observed in capacitance-voltage measurements on Schottky structures. The negative effect of contaminants on the device was dramatic and a compensated p-i-n structure was also deposited to enhance the cell performance.

Desarrollo de un cemento de base silicatada a partir de rocas volcanicas vitreas alcalinas: interpretacion de los resultados preindustriales basada en la composicion quimico-mineralogica de los precursores geologicos.

El proyecto GEOCISTEM intentó hallar un substituto vítreo alcalino natural, económico y viable industrialmente, a los reactivos químicos empleados en un cemento silicatado patentado. Se realizó una completa prospección de los recursos consistentes en rocas volcánicas vítreas ricas en álcalis (Na2O+K2O > 10 %, K>>Na), preferentemente fragmentarias (piroclásticas) en diferentes regiones volcánicas europeas (Italia, Grecia, España). Unas 100 muestras fueron analizadas (elementos mayores mediante FRX; caracterización, petrográfica y mediante DRX) y 10 fueron empleadas en la fabricación (en laboratorio y escala semiindustrial) del cemento silicatado. Se obtuvo toda una familia de cementos (diez) con alta resistencia a la compresión (50-60 MPa a los 28 días), resistentes a la corrosión y que no desarrollan reacción alcalina-agregados, muy adecuados para el encapsulado de residuos especiales; todo ello con una notable reducción del consumo de energía en el proceso de fabricación y en el consumo de silicato de K (hasta 1/3-1/4 del requerido en la patente original). El estudio químico-mineralógico desarrollado demuestra que la formulación original del cemento era excesivamente restrictiva, y que la mineralogía producida en los procesos de desvitrificación naturales controla estrictamente el rendimiento de estos nuevos recursos durante el proceso de fabricación del cemento. Las rocas anhidras con feldespatos alcalinos y fases silíceas cristalinas predominantes obtenidas a temperaturas inferiores a las magmáticas (desvitrificación) son más interesantes que las zeolitizadas naturalmente, ya que no requieren calcinación previa con el consiguiente ahorro energético.

Plant uses in different bronze and iron age settlements from the Nuoro province (Sardinia). The results of phytolith analyses from several ceramic fragments and grinding stones.

Ceramic vessels and milling stones are important components of the archaeological record in several Nuraghi from the Pranemuru Plateau (Sardinia). To obtain information on the possible uses of the milling stones and the content vessels is of great interest to understand the economical activities carried out in these sites by these populations. One of the approaches to obtain information on the plant uses was the phytolith analyses of the sediment adhered both to the surface of the milling stones and to the surface of the vessel content. In total we analyzed eleven archaeological samples and two control samples collected from five different Nuraghi in the Pranemuru Plateau (Nuoro Province, Sardinia). The Nuraghi were located in an area of 10 km radius from nuraghe Arrubiu and were chronologically ascribed to the Bronze Age and one site -Pranu Illixi- to the Iron Age.

Determinación del volumen gástrico residual: en busca de la mejor evidencia

Introducción: La determinación del volumen gástrico residual es una práctica frecuente en pacientes críticos, pero hay falta de consenso acerca de la conveniencia de reintroducir o desechar el contenido gástrico aspirado (CGA). Objetivo: Determinar el grado de evidencia científica acerca de la eficacia de 2 intervenciones-reintroducción/rechazo- del CGA en pacientes críticos. Material y métodos: Revisión sistemática de la evidencia disponible acerca de la conveniencia de reintroducir o desechar el CGA. Proceso: a) establecimiento de los criterios de inclusión/exclusión; b) determinación de la estrategia de búsqueda (palabras clave e itinerarios); c) vaciado de las bases de datos: MEDLINE, CINAHL, CUIDEN, IME, SCIELO y COCHRANE. Búsqueda por método indirecto y vaciado manual de índices; d) lectura crítica independiente y contrastada, utilizando la plantilla CASPe, y e) contraste de resultados del análisis crítico. Resultados: Los itinerarios de búsqueda generan más de 800 referencias que, una vez depuradas, permiten seleccionar 54. Después de su lectura, sólo 4 se centran realmente en cuestiones relacionadas con la reintroducción/rechazo del CGA: 2 revisiones, un estudio observacional y un ECA de muestra pequeña. La heterogeneidad de estos estudios no permite emplear técnicas de metaanálisis. Por ello se analizan por separado los resultados de cada estudio. Mediante este proceso se obtiene un resultado final que demuestra un bajo grado de evidencia científica. Conclusiones: Hay escasa evidencia científica acerca de la conveniencia, la seguridad y los beneficios de ambas intervenciones. Es difícil establecer un protocolo de cuidados, por lo que se planteó realizar un estudio experimental para establecer las indicaciones y contraindicaciones de ambas intervenciones.