Progress in a-Si:H/c-Si heterojunction emitters obtained by Hot-Wire CVD at 200°C

In this work, we investigate heterojunction emitters deposited by Hot-Wire CVD on p-type crystalline silicon. The emitter structure consists of an n-doped film (20 nm) combined with a thin intrinsic hydrogenated amorphous silicon buffer layer (5 nm). The microstructure of these films has been studied by spectroscopic ellipsometry in the UV-visible range. These measurements reveal that the microstructure of the n-doped film is strongly influenced by the amorphous silicon buffer. The Quasy-Steady-State Photoconductance (QSS-PC) technique allows us to estimate implicit open-circuit voltages near 700 mV for heterojunction emitters on p-type (0.8 Ω·cm) FZ silicon wafers. Finally, 1 cm 2 heterojunction solar cells with 15.4% conversion efficiencies (total area) have been fabricated on flat p-type (14 Ω·cm) CZ silicon wafers with aluminum back-surface-field contact.

Current transport and electroluminescence mechanisms in thin SiO2 films containing Si nanocluster-sensitized erbium ions.

We have studied the current transport and electroluminescence properties of metal oxide semiconductor MOS devices in which the oxide layer, which is codoped with silicon nanoclusters and erbium ions, is made by magnetron sputtering. Electrical measurements have allowed us to identify a Poole-Frenkel conduction mechanism. We observe an important contribution of the Si nanoclusters to the conduction in silicon oxide films, and no evidence of Fowler-Nordheim tunneling. The results suggest that the electroluminescence of the erbium ions in these layers is generated by energy transfer from the Si nanoparticles. Finally, we report an electroluminescence power efficiency above 10−3%. © 2009 American Institute of Physics. doi:10.1063/1.3213386

Electrical pump & probe and injected carrier losses quantification in Er doped Si slot waveguides

Electrically driven Er3+ doped Si slot waveguides emitting at 1530 nm are demonstrated. Two different Er3+ doped active layers were fabricated in the slot region: a pure SiO2 and a Si-rich oxide. Pulsed polarization driving of the waveguides was used to characterize the time response of the electroluminescence (EL) and of the signal probe transmission in 1 mm long waveguides. Injected carrier absorption losses modulate the EL signal and, since the carrier lifetime is much smaller than that of Er3+ ions, a sharp EL peak was observed when the polarization was switched off. A time-resolved electrical pump & probe measurement in combination with lock-in amplifier techniques allowed to quantify the injected carrier absorption losses. We found an extinction ratio of 6 dB, passive propagation losses of about 4 dB/mm, and a spectral bandwidth > 25 nm at an effective d.c. power consumption of 120 μW. All these performances suggest the usage of these devices as electro-optical modulators.

Highly textured Sr, Nb, co-doped BiFeO3 thin films grown on SrRuO3/Si substrates by rf-sputtering

In this study, (011)-highly oriented Sr, Nb co-doped BiFeO3 (BFO) thin films were successfully grown on SrRuO3/Si substrates by rf-magnetron sputtering. The presence of parasite magnetic phases was ruled out based on the high resolution x-ray diffraction data. BFO films exhibited a columnar-like grain growth with rms surface roughness values of 5.3 nm and average grain sizes of 65-70 nm for samples with different thicknesses. Remanent polarization values (2Pr) of 54 lC cm 2 at room temperature were found for the BFO films with a ferroelectric behavior characteristic of an asymmetric device structure. Analysis of the leakage mechanisms for this structure in negative bias suggests Schottky injection and a dominant Poole-Frenkel trap-limited conduction at room temperature. Oxygen vacancies and Fe3þ/Fe2þ trap centers are consistent with the surface chemical bonding states analysis from x-ray photoelectron spectroscopy data. The (011)-BFO/ SrRuO3/Si film structure exhibits a strong magnetic interaction at the interface between the multiferroic film and the substrate layer where an enhanced ferromagnetic response at 5 K was observed. Zero-field cooled (ZFC) and field cooled (FC) magnetization curves of this film system revealed a possible spin glass behavior at spin freezing temperatures below 30 K depending on the BFO film thickness.

The valence band alignment at ultrathin SiO2/Si interfaces

High resolution x-ray photoelectron spectroscopy has been used to determine the valence band alignment at ultrathin SiO2/Si interfaces. In the oxide thickness range 1.6-4.4 nm the constant band-offset values of 4.49 and 4.43 eV have been obtained for the dry SiO2/Si(100) and the wet SiO2/Si(100) interfaces, respectively. The valence band alignment of dry SiO2/Si(111) (4.36 eV) is slightly smaller than the case of the dry SiO2/Si(100) interface.

La cultura escrita en el mundo atlantico colonial: claves historiograficas, retos y perspectivas.

En este artículo nos centraremos en el Atlántico y las relaciones en clave cultural (de ida y vuelta) entre América y Europa. Analizaremos los estudios que se han ocu­pado de la cultura escrita, la historiografía sobre la correspondencia, la circulación de los textos y las redes de distribución de li­bros en las relaciones atlánticas, donde la comunicación estaba sujeta a un ritmo pro­pio de contacto y transferencia. La mirada en torno a los fenómenos atlánticos supone romper ciertas barreras, admitir la mezcla y lo diverso, no centrarse únicamente en las interpretaciones institucionales y jurídicas, ya que la norma se fija, pero su transgresión se da de manera habitual en las relaciones atlánticas.

Usar la lengua en la escuela.

La meta del proceso de aprendizaje de la lectura y la escritura en un sentido amplio es la participación activa de los nuevos miembros en las prácticas letradas de su comunidad. Dado que lo que se busca es pericia en determinadas prácticas, el mejor camino para alcanzarla es por medio de la inmersión en versiones auténticas de esas prácticas, en las cuales el uso de la lengua y de los textos responde a propósitos que van más allá de la enseñanza de la lectura y la escritura. Una vez discutidas las evidencias empíricas que apoyan esta propuesta, se presentará un enfoque transversal de la lectura y la escritura. Según este enfoque, la formación de miembros activos de la cultura escrita ha de realizarse no solamente desde la clase de lengua sino desde otras disciplinas curriculares no lingüísticas. A diferencia de lo que sucede en el área de lengua, en la cual hay que tratar de que se cree la necesidad para que tenga sentido introducir diversos tipos de texto, en las otras áreas curriculares se trata de crear los textos para responder a necesidades que ya existen. En las áreas no lingüísticas es donde hay más posibilidades de utilizar con sentido textos auténticos con diversas finalidades. La propuesta de transversalidad ha encontrado escollos importantes para atender los requerimientos de diversidad y autenticidad de los textos, la interacción entre lengua oral y escrita y el intercambio entre pares, entre ellos, el uso exclusivo de libros de texto, la dificultad de encarar en las aulas un trabajo diversificado y la fragmentación de responsabilidades. Estos escollos reflejan los cambios cruciales que esta propuesta implica y algunos aspectos de nuestra cultura escolar que convendría superar si se quiere formar lectores comprensivos y críticos, ciudadanos hábiles en el manejo de la información escrita.

Structural factors impacting carrier transport and electroluminescence from Si nanocluster-sensitized Er ions.

We present an analysis of factors influencing carrier transport and electroluminescence (EL) at 1.5 µm from erbium-doped silicon-rich silica (SiOx) layers. The effects of both the active layer thickness and the Si excess content on the electrical excitation of erbium are studied. We demonstrate that when the thickness is decreased from a few hundred to tens of nanometers the conductivity is greatly enhanced. Carrier transport is well described in all cases by a Poole-Frenkel mechanism, while the thickness-dependent current density suggests an evolution of both density and distribution of trapping states induced by Si nanoinclusions. We ascribe this observation to stress-induced effects prevailing in thin films, which inhibit the agglomeration of Si atoms, resulting in a high density of sub-nm Si inclusions that induce traps much shallower than those generated by Si nanoclusters (Si-ncs) formed in thicker films. There is no direct correlation between high conductivity and optimized EL intensity at 1.5 µm. Our results suggest that the main excitation mechanism governing the EL signal is impact excitation, which gradually becomes more efficient as film thickness increases, thanks to the increased segregation of Si-ncs, which in turn allows more efficient injection of hot electrons into the oxide matrix. Optimization of the EL signal is thus found to be a compromise between conductivity and both number and degree of segregation of Si-ncs, all of which are governed by a combination of excess Si content and sample thickness. This material study has strong implications for many electrically driven devices using Si-ncs or Si-excess mediated EL.

Infrared characterization of a-Si:H/a-Si1-xCx:H interfaces

Infrared spectroscopy was used to characterize three series of a-Si:H/a-Si1-xCx:H multilayers in which their geometrical parameters were varied. The infrared active vibrational groups in their spectra and the interference fringes in their absorption-free zone were studied to analyze the interfaces and the changes that are produced in very thin layers. Our results show that hydrogen is bonded to silicon only in monohydride groups. No additional hydrogen could be detected at these interfaces. The deposition of very thin a-Si1-xCx:H layers seems to affect their porous structure, making them denser.

Correlation between charge transport and electroluminescence properties of Si-rich oxide/nitride/oxide-based light emitting capacitors.

The electrical and electroluminescence (EL) properties at room and high temperatures of oxide/ nitride/oxide (ONO)-based light emitting capacitors are studied. The ONO multidielectric layer is enriched with silicon by means of ion implantation. The exceeding silicon distribution follows a Gaussian profile with a maximum of 19%, centered close to the lower oxide/nitride interface. The electrical measurements performed at room and high temperatures allowed to unambiguously identify variable range hopping (VRH) as the dominant electrical conduction mechanism at low voltages, whereas at moderate and high voltages, a hybrid conduction formed by means of variable range hopping and space charge-limited current enhanced by Poole-Frenkel effect predominates. The EL spectra at different temperatures are also recorded, and the correlation between charge transport mechanisms and EL properties is discussed.

Los grandes libros, pequeñas bibliotecas

Todo gran libro lleva dentro una pequeña biblioteca; se hacen visibles sus libros en sus capítulos, sus líneas, sus palabras. Es la biblioteca portátil que llevaba su autor en la mente, en el alma, al escribirlo. Los lectores vamos descubriendo nuestras inquietudes, nuestras obsesiones, en las páginas de los libros que leemos si hay en ellos puentes para que podamos hacerlo. Luego, al hablar, casi sin darnos cuenta, acudimos a palabras, frases, a anécdotas de lo leído para hablar de nuestras ideas, de nuestros sentimientos. El escritor las convierte en carne y sangre de su propio texto. Si tuviéramos a nuestro alcance el fichero de las bibliotecas de los grandes creadores, podríamos comprobar cómo ellos liban de las flores de sus lecturas para sacar de sí la miel y hacer- la palabra escrita. Y sin tener a la vista estas bibliotecas, también podemos a menudo comprobarlo: basta un guiño del texto a otra obra para darnos la pista de lo que llenó un tiempo del escritor.

Structure of a-Si:H/a-Si1-xCx:H multilayers deposited in a reactor with automated substrate holder

This paper deals with the structural properties of a-Si:H/a-Si1-xCx: H multilayers deposited by glow-discharge decomposition of SiH4 and SiH4 and CH4 mixtures. The main feature of the rf plasma reactor is an automated substrate holder. The plasma stabilization time and its influence on the multilayer obtained is discussed. A series of a-Si:H/a-Si1-xCx: H multilayers has been deposited and characterized by secondary ion mass spectrometry (SIMS), X-ray diffraction (XRD) and transmission electron microscopy (TEM). No asymmetry between the two types of interface has been observed. The results show that the multilayers present a very good periodicity and low roughness. The difficulty of determining the abruptness of the multilayer at the nanometer scale is discussed.

Aprovisionamiento de SI de Worten España Distribución, S.L.

Peer-reviewed

Jóvenes y efecto barrio. Un estudio comparativo en la periferia de Barcelona y Milán

La presente investigación analiza la influencia del barrio sobre la configuración y desarrollo de los trayectos juveniles -especialmente en las dimensiones formativas, laborales y de ocio-, al mismo tiempo que tiene en cuenta la ciudad y el impacto de las instituciones sociales ubicadas en el barrio. La pregunta de investigación entorno a la cual gira el presente trabajo es si vivir en un barrio desfavorecido influye en el desarrollo personal, laboral y social de los jóvenes (de entre 16 y 24 años) que residen en él, así como la forma en qué influye. Para ello, se ha desarrollado una metodología variada, que combina: a). el análisis cuantitativomediante el uso de datos censales y del padrón municipal -, b). el análisis cualitativo, a través de instrumentos como la entrevista semi-estructurada oral, la entrevista estructurada escrita y la observación participante; y, c). el análisis comparativo entre ciudades (Barcelona y Milán), barrios (Trinitat Nova, Ciutat Meridiana, Comasina y Sant"Ambrogio) y jóvenes.

Proyecto de una Torre Grúa. Normas de seguridad y salud laboral

This project is a tool for engineers and technicians in the development and knowledge of the most important construction equipment, tower crane. It consists of a memory, 10 annexes and an Excel spreadsheet to do the calculations automatically . Some of these annexes are: Annex 1. Types of cranes and elements of them. Annex 2. Mounting and dismounting. Annex 3. Useful clamping loads. Annex 4. Safety systems , etc. Every single annex separately, provides detailed explanations , both written and visual of problems and solutions in the world of tower cranes . Professionals are able to learn in an orderly way, definitions, developments, calculations, processes etc., Which will greatly easy people's job in the construction and in the writing of a project. Also a spreadsheet with the Excel program has been made to help engineers on calculations. This sheet is protected and it can be accesed only to enter the data needed to perform the calculations of the safety factor and weight of shoes . The results will tell us if there is a risk of tipping of the tower crane and the weight of shoes. This tool will greatly help engineers on their calculations. All documentation is based on laws, regulations and no legal rules status, they guarantee that we are always within the Spanish and legislative Autonomous framework. This fact makes the professional carries out a project to a successful future and a legalistic view. Also note that these rules are in constant change, which makes it necessary for the professional to always be in a constant revision of the legislation.