Configurational statistical model for the damaged structure of silicon oxide after ion implantation

A configurational model for silicon oxide damaged after a high-dose ion implantation of a nonreactive species is presented. Based on statistics of silicon-centered tetrahedra, the model takes into account not only the closest environment of a given silicon atom, but also the second neighborhood, so it is specified whether the oxygen attached to one given silicon is bridging two tetrahedra or not. The frequencies and intensities of infrared vibrational bands have been calculated by averaging over the distributions and these results are in agreement with the ones obtained from infrared experimental spectra. Likewise, the chemical shifts obtained from x-ray photoelectron spectroscopy (XPS) analysis are similar to the reported values for the charge-transfer model of SiOx compounds.

Raman microstructural analysis of silicon-on-insulator formed by high dose oxygen ion implantation: As-implanted structures

A microstructural analysis of silicon-on-insulator samples obtained by high dose oxygen ion implantation was performed by Raman scattering. The samples analyzed were obtained under different conditions thus leading to different concentrations of defects in the top Si layer. The samples were implanted with the surface covered with SiO2 capping layers of different thicknesses. The spectra measured from the as-implanted samples were fitted to a correlation length model taking into account the possible presence of stress effects in the spectra. This allowed quantification of both disorder effects, which are determined by structural defects, and residual stress in the top Si layer before annealing. These data were correlated to the density of dislocations remaining in the layer after annealing. The analysis performed corroborates the existence of two mechanisms that generate defects in the top Si layer that are related to surface conditions during implantation and the proximity of the top Si/buried oxide layer interface to the surface before annealing.

Threshold effects on heavy quark production in gamma gamma interactions

The exchange of gluons between heavy quarks produced in e+e- interactions results in an enhancement of their production near threshold. We study QCD threshold effects in collisions. The results are relevant to heavy quark production by beamstrahlung and laser backscattering in future linear collider experiments. Detailed predictions for top-, bottom-, and charm-quark production are presented.

New predictions for inclusive heavy-quarkonium P-wave decays

We show that some nonrelativistic quantum chromodynamics color-octet matrix elements can be written in terms of (derivatives of) wave functions at the origin and of nonperturbative universal constants once the factorization between the soft and ultrasoft scales is achieved by using an effective field theory where only ultrasoft degrees of freedom are kept as dynamical entities. This allows us to derive a new set of relations between inclusive heavy-quarkonium P-wave decays into light hadrons with different principal quantum numbers and with different heavy flavors. In particular, we can estimate the ratios of the decay widths of bottomonium P-wave states from charmonium data.