Hydroxyapatite coatings grown by pulsed laser deposition with a beam of 355 nm wavelength

Calcium phosphate coatings, obtained at different deposition rates by pulsed laser deposition with a Nd:YAG laser beam of 355-nm wavelength, were studied. The deposition rate was changed from 0.043 to 1.16 /shot by modification of only the ablated area, maintaining the local fluence constant to perform the ablation process in similar local conditions. Characterization of the coatings was performed by scanning electron microscopy, x-ray diffractometry, and infrared, micro-Raman, and x-ray photoelectron spectroscopy. The coatings showed a compact surface morphology formed by glassy gains with some droplets on them. Only hydroxyapatite (HA) and alpha-tricalcium phosphate (alpha-TCP) peaks were found in the x-ray diffractograms. The relative content of alpha TCP diminished with decreasing deposition rates, and only HA peaks were found for the lowest rate. The origin of alpha TCP is discussed.

Procedure to characterize microroughness of optical thin films: application to ion-beam-sputtered vacuum-ultraviolet coatings

A method for characterizing the microroughness of samples in optical coating technology is developed. Measurements over different spatial-frequency ranges are composed into a single power spectral density (PSD) covering a large bandwidth. This is followed by the extraction of characteristic parameters through fitting of the PSD to a suitable combination of theoretical models. The method allows us to combine microroughness measurements performed with different techniques, and the fitting procedure can be adapted to any behavior of a combined PSD. The method has been applied to a set of ion-beam-sputtered fluoride vacuum-UV coatings with increasing number of alternative low- and high-index layers. Conclusions about roughness development and microstructural growth are drawn.

Atomic structure of the nanocrystalline Si particles appearing in nanostructured Si thin films produced in low-temperature radiofrequency plasmas

Nanostructured Si thin films, also referred as polymorphous, were grown by plasma-enhanced chemical vapor deposition. The term "polymorphous" is used to define silicon material that consists of a two-phase mixture of amorphous and ordered Si. The plasma conditions were set to obtain Si thin films from the simultaneous deposition of radical and ordered nanoparticles. Here, a careful analysis by electron transmission microscopy and electron diffraction is reported with the aim to clarify the specific atomic structure of the nanocrystalline particles embedded in the films. Whatever the plasma conditions, the electron diffraction images always revealed the existence of a well-defined crystalline structure different from the diamondlike structure of Si. The formation of nanocrystallinelike films at low temperature is discussed. A Si face-cubic-centered structure is demonstrated here in nanocrystalline particles produced in low-pressure silane plasma at room temperature.

Characterization of nano-oxide layers fabricated by ion beam oxidation

In this paper, a remote O2 ion source is used for the formation of nano-oxide layers. The oxidation efficiency was measured in CoFe-oxide films, and a decrease of the oxide layer with the pan angle and the oxidation pressure is observed. For the same oxidation pressure, the oxidation efficiency depends on the O2 content in the Ar-O2 plasma. These results were applied in optimizing the fabrication of Al2O3 barrier for tunnel junctions. This method was also used to fabricate junctions with Fe-oxide layers inserted at the Al2O3-CoFe interface. TEM and magnetization data indicate that after anneal at 385°C, a homogeneous ferromagnetic Fe-oxide layer (Fe3O4?) is formed.

Velocity cross-correlations and atomic momentum transfer in simple liquids with different potential cores

Time correlation functions between the velocity of a tagged particle and velocities of particles within specified ranges of initial separations have been obtained by molecular dynamics simulation. These correlation functions have allowed us to analyze the momentum transfer between particles in different coordination shells. Two simple liquids at very different densities and two purely repulsive potentials with very different softnesses have been considered. The longitudinal correlations, which are the velocity cross-correlations along the initial direction defined by the centers of two given particles, have been calculated separately. It has been proven that these correlations should be attributed to particles both in front of and behind the central one. As with propagating longitudinal modes, they are strongly dependent on the softness of the potential core. Some characteristic features of the velocity correlation functions after the initial rise should be related to nonlongitudinal correlations. It has been shown that velocity cross-correlations between distinct particles cannot only be attributed to the direct interactions among particles, but also to the motions induced by the movement of a tagged particle on their neighbors.

Nanometer-scale oxidation of Si(100) surfaces by tapping mode atomic force microscopy

The nanometer¿scale oxidation of Si(100) surfaces in air is performed with an atomic force microscope working in tapping mode. Applying a positive voltage to the sample with respect to the tip, two kinds of modifications are induced on the sample: grown silicon oxide mounds less than 5 nm high and mounds higher than 10 nm (which are assumed to be gold depositions). The threshold voltage necessary to produce the modification is studied as a function of the average tip¿to¿sample distance.

Nonempirical cluster-model study of the chemisorption of atomic hydrogen on the (111) surface of diamondlike crystals

The interaction of atomic hydrogen with C4H9, Si4H9, and Ge4H9 model clusters has been studied using all-electron and pseudopotential ab initio Hartree-Fock computations with basis sets of increasing flexibility. The results show that the effect of polarization functions is important in order to reproduce the experimental findings, but their inclusion only for the atoms directly involved in the chemisorption bond is usually sufficient. For the systems H-C4H9 and H-Si4H9 all-electron and pseudopotential results are in excellent agreement when basis sets of comparable quality are used. Besides, semiempirical modified-neglect-of-differential-overlap computations provide quite reliable results both for diamond and silicon and have been used to investigate larger model clusters. The results confirm the local nature of chemisorption and further justify the use of minimal X4H9 model clusters.

Chemisorption of atomic aluminum on Si(111): Evidence for an adsorbate-induced relaxation based on ab initio cluster-model calculations

Interaction models of atomic Al with Si4H9, Si4H7, and Si6H9 clusters have been studied to simulate Al chemisorption on the Si(111) surface in the atop, fourfold atop, and open sites. Calculations were carried out using nonempirical pseudopotentials in the framework of the ab initio Hartree-Fock procedure. Equilibrium bond distances, binding energies for adsorption, and vibrational frequencies of the adatoms are calculated. Several basis sets were used in order to show the importance of polarization effects, especially in the binding energies. Final results show the importance of considering adatom-induced relaxation effects to specify the order of energy stabilities for the three different sites, the fourfold atop site being the preferred one, in agreement with experimental findings.

Ion-beam induced oxidation of GaAs and AlGaAs

The oxidation of GaAs and AlxGa1−xAs targets by oxygen irradiation has been studied in detail. It was found that the oxidation process is characterized by the strong preferential oxidation of Al as compared to Ga, and of Ga as compared to As. This experimental observation, which has been accurately quantified by using x‐ray photoelectron spectroscopy, is connected to the different heats of formation of the corresponding oxides. The oxide grown by ion beam oxidation shows a strong depletion in As and relatively low oxidation of As as well. The depletion can be associated with the preferential sputtering of the As oxide in respect to other compounds whereas the low oxidation is due to the low heat of formation. In contrast Al is rapidly and fully oxidized, turning the outermost layer of the altered layer to a single Al2O3 overlayer, as observed by transmission electron microscopy. The radiation enhanced diffusion of oxygen and aluminum in the altered layer explains the large thickness of these altered layers and the formation of Al oxides on top of the layers. For the case of ion‐beam oxidation of GaAs a simulation program has been developed which describes adequately the various growth mechanisms experimentally observed

Atomic force microscopy: probing the nanoworld

Atomic Force Microscope and related techniques have played a key role in the development of the nanotechnology revolution that is taking place in science. This paper reviews the basic principles behind the technique and its different operation modes and applications, pointing out research worksperformed in the Nanometric Techniques Unit of the CCiTUB in order to exemplify the vast array of capabilities of these instruments.

Atomic Ordering and Martensitic Transitions in Cu-Zn-Al Shape Memory Alloys

We present results from both, calorimetric and dilatometric studies of the isothermal ordering process taking place in a Cu-Zn-Al shape memory alloy after quenches from Tq temperatures ranging from 350 K to 1200 K. The dissipated energy and the length variations of the system are obtained during the process. The change of these quantities in the whole process have been compared with the difference [MATH] between Ms, measured after the relaxation and Ms measured just after the quench. We obtain that these three quantities present, as a function of Tq, the same qualitative behaviour. These changes are then associated with changes of the L21 ordering after the quench in the system. The relaxational process does not follow a single exponential decay. Instead, a continuous slowing down is observed. A relaxation time [MATH] has been defined to characterize the relaxation rate. We show that [MATH] depends on both the annealing and the quenching (Tq [MATH] 800 K) temperatures through an Arrhenius law.

Two distinct plant respiratory physiotypes might exist which correspond to fast-growing and slow-growing species

The origin of the carbon atoms in CO2 respired by leaves in the dark of several plant species has been studied using 13C/12C stable isotopes. This study was conducted using an open gas exchange system for isotope labeling that was coupled to an elemental analyser and further linked to an isotope ratio mass spectrometer (EA-IRMS) or coupled to a gas chromatography-combustion-isotope ratio mass spectrometer (GC-C-IRMS). We demonstrate here that the carbon, which is recently assimilated during photosynthesis, accounts for nearly ca. 50% of the carbon in the CO2 lost through dark respiration after illumination in fast-growing and cultivated plants and trees and, accounts for only ca. 10% in slow-growing plants. Moreover, our study shows that fast- growing plants, which had the largest percentages of newly fixed carbon of leaf-respired CO2 , were also those with the largest shoot/root ratios, whereas slow-growing plants showed the lowest shoot/root values.

Characterisation of the LMS200 laser beam under the influence of blockage surfaces. Influence on 3D scanning of tree orchards

The geometric characterisation of tree orchards is a high-precision activity comprising the accurate measurement and knowledge of the geometry and structure of the trees. Different types of sensors can be used to perform this characterisation. In this work a terrestrial LIDAR sensor (SICK LMS200) whose emission source was a 905-nm pulsed laser diode was used. Given the known dimensions of the laser beam cross-section (with diameters ranging from 12 mm at the point of emission to 47.2 mm at a distance of 8 m), and the known dimensions of the elements that make up the crops under study (flowers, leaves, fruits, branches, trunks), it was anticipated that, for much of the time, the laser beam would only partially hit a foreground target/object, with the consequent problem of mixed pixels or edge effects. Understanding what happens in such situations was the principal objective of this work. With this in mind, a series of tests were set up to determine the geometry of the emitted beam and to determine the response of the sensor to different beam blockage scenarios. The main conclusions that were drawn from the results obtained were: (i) in a partial beam blockage scenario, the distance value given by the sensor depends more on the blocked radiant power than on the blocked surface area; (ii) there is an area that influences the measurements obtained that is dependent on the percentage of blockage and which ranges from 1.5 to 2.5 m with respect to the foreground target/object. If the laser beam impacts on a second target/object located within this range, this will affect the measurement given by the sensor. To interpret the information obtained from the point clouds provided by the LIDAR sensors, such as the volume occupied and the enclosing area, it is necessary to know the resolution and the process for obtaining this mesh of points and also to be aware of the problem associated with mixed pixels.