Chemisorption of atomic aluminum on Si(111): Evidence for an adsorbate-induced relaxation based on ab initio cluster-model calculations

Interaction models of atomic Al with Si4H9, Si4H7, and Si6H9 clusters have been studied to simulate Al chemisorption on the Si(111) surface in the atop, fourfold atop, and open sites. Calculations were carried out using nonempirical pseudopotentials in the framework of the ab initio Hartree-Fock procedure. Equilibrium bond distances, binding energies for adsorption, and vibrational frequencies of the adatoms are calculated. Several basis sets were used in order to show the importance of polarization effects, especially in the binding energies. Final results show the importance of considering adatom-induced relaxation effects to specify the order of energy stabilities for the three different sites, the fourfold atop site being the preferred one, in agreement with experimental findings.

Sobre el area de dispersion de Artemisia tournefortiana Reich. en la Peninsula Iberica

Al consultar los pliegos de Artemisia L. contenidos en el Herbario BCF, con motivo de la revisión de dicho género en la Península Ibérica, que estamos realizando como tesis doctoral, hemos hallado dos de ellos (BCF n.° 7473 y n.° 7475) recolectados por don Salvador Rivas Goday, el 17 de septiembre de 1948, en Titulcia (MADRID) y determinados como Artemisia variabilis Ten.

A proposito de la dispersion de Verbascum boerhavii L. var. bicolor (Bad.) Arcang. en Catalunya

A propósito de la dispersión de Verbascum boerhavii var. bicolor (Bad.) Arcang. en Catalunya. Verbascum boerhavii L. var. bicolor (Bad.) Arcang., Comp. Fl. Ital. 505 (1882). = V. bicolor Bad., Osserv., 3 (1824) = V. boerhavii L. fma. bicolor (Bad.) Murb., Lunds. Univ. Arssk, 29 (2): 159 (1933). = V. maiale DC. var. bicolor (Bad.) Rouy, Fl. Fr. 9:9 (1909).

Atomic force microscopy: probing the nanoworld

Atomic Force Microscope and related techniques have played a key role in the development of the nanotechnology revolution that is taking place in science. This paper reviews the basic principles behind the technique and its different operation modes and applications, pointing out research worksperformed in the Nanometric Techniques Unit of the CCiTUB in order to exemplify the vast array of capabilities of these instruments.

Experimental investigation of the initial regime in fingering electrodeposition: Dispersion relation and velocity measurements.

Recently a fingering morphology, resembling the hydrodynamic Saffman-Taylor instability, was identified in the quasi-two-dimensional electrodeposition of copper. We present here measurements of the dispersion relation of the growing front. The instability is accompanied by gravity-driven convection rolls at the electrodes, which are examined using particle image velocimetry. While at the anode the theory presented by Chazalviel et al. [J. Electroanal. Chem. 407, 61 (1996)] describes the convection roll, the flow field at the cathode is more complicated because of the growing deposit. In particular, the analysis of the orientation of the velocity vectors reveals some lag of the development of the convection roll compared to the finger envelope.

Atomic Ordering and Martensitic Transitions in Cu-Zn-Al Shape Memory Alloys

We present results from both, calorimetric and dilatometric studies of the isothermal ordering process taking place in a Cu-Zn-Al shape memory alloy after quenches from Tq temperatures ranging from 350 K to 1200 K. The dissipated energy and the length variations of the system are obtained during the process. The change of these quantities in the whole process have been compared with the difference [MATH] between Ms, measured after the relaxation and Ms measured just after the quench. We obtain that these three quantities present, as a function of Tq, the same qualitative behaviour. These changes are then associated with changes of the L21 ordering after the quench in the system. The relaxational process does not follow a single exponential decay. Instead, a continuous slowing down is observed. A relaxation time [MATH] has been defined to characterize the relaxation rate. We show that [MATH] depends on both the annealing and the quenching (Tq [MATH] 800 K) temperatures through an Arrhenius law.

Thomas-Fermi theory for atomic nuclei revisited

The recently developed semiclassical variational Wigner-Kirkwood (VWK) approach is applied to finite nuclei using external potentials and self-consistent mean fields derived from Skyrme inter-actions and from relativistic mean field theory. VWK consist s of the Thomas-Fermi part plus a pure, perturbative h 2 correction. In external potentials, VWK passes through the average of the quantal values of the accumulated level density and total en energy as a function of the Fermi energy. However, there is a problem of overbinding when the energy per particle is displayed as a function of the particle number. The situation is analyzed comparing spherical and deformed harmonic oscillator potentials. In the self-consistent case, we show for Skyrme forces that VWK binding energies are very close to those obtained from extended Thomas-Fermi functionals of h 4 order, pointing to the rapid convergence of the VWK theory. This satisfying result, however, does not cure the overbinding problem, i.e., the semiclassical energies show more binding than they should. This feature is more pronounced in the case of Skyrme forces than with the relativistic mean field approach. However, even in the latter case the shell correction energy for e.g.208 Pb turns out to be only ∼ −6 MeV what is about a factor two or three off the generally accepted value. As an adhoc remedy, increasing the kinetic energy by 2.5%, leads to shell correction energies well acceptable throughout the periodic table. The general importance of the present studies for other finite Fermi systems, self-bound or in external potentials, is pointed out.

Networks of noisy oscillators with correlated degree and frequency dispersion

We investigate how correlations between the diversity of the connectivity of networks and the dynamics at their nodes affect the macroscopic behavior. In particular, we study the synchronization transition of coupled stochastic phase oscillators that represent the node dynamics. Crucially in our work, the variability in the number of connections of the nodes is correlated with the width of the frequency distribution of the oscillators. By numerical simulations on Erdös-Rényi networks, where the frequencies of the oscillators are Gaussian distributed, we make the counterintuitive observation that an increase in the strength of the correlation is accompanied by an increase in the critical coupling strength for the onset of synchronization. We further observe that the critical coupling can solely depend on the average number of connections or even completely lose its dependence on the network connectivity. Only beyond this state, a weighted mean-field approximation breaks down. If noise is present, the correlations have to be stronger to yield similar observations.

Agglomeration vs. dispersion of economic activities in the districts of Paris

The spatial distribution of economic activity has often been analysed for wide geographical areas such as regions or metropolitan areas, but it has rarely been subject to microanalysis, especially outside the U.S. In this paper we focus on what happens within a large European city (Par is), and analyse how the industrial composition of its districts differs and how these districts evolve. We also analyse suburbanization process for both residents and the workforce and provide empirical evidence about the changing roles of the core and intramuros periphery. Keywords: agglomeration, suburbanization, Paris, micropolitan analysis

Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers

The origin of the microscopic inhomogeneities in InxGa1-xAs layers grown on GaAs by molecular beam epitaxy is analyzed through the optical absorption spectra near the band gap. It is seen that, for relaxed thick layers of about 2.8μm, composition inhomogeneities are responsible for the band edge smoothing into the whole compositional range (0.05atomic diffusion at the surface during growth, induced by the strain inhomogeneities that arise from stress relaxation. In consequence, the strain variations present in the layer are converted into composition variations during growth. This process is energetically favorable as it diminishes elastic energy. An additional support to this hypothesis is given by a clear proportionality between the magnitude of the composition variations and the mean strain

Quantification of the bond-angle dispersion by Raman spectroscopy and the strain energy of amorphous silicon

A thorough critical analysis of the theoretical relationships between the bond-angle dispersion in a-Si, Δθ, and the width of the transverse optical Raman peak, Γ, is presented. It is shown that the discrepancies between them are drastically reduced when unified definitions for Δθ and Γ are used. This reduced dispersion in the predicted values of Δθ together with the broad agreement with the scarce direct determinations of Δθ is then used to analyze the strain energy in partially relaxed pure a-Si. It is concluded that defect annihilation does not contribute appreciably to the reduction of the a-Si energy during structural relaxation. In contrast, it can account for half of the crystallization energy, which can be as low as 7 kJ/mol in defect-free a-Si