Large Magnetoresistance in Fe/MgO/FeCo(001) Epitaxial Tunnel-Junctions on GaAs(001).

We present tunneling experiments on Fe~001!/MgO~20 Å!/FeCo~001! single-crystal epitaxial junctions of high quality grown by sputtering and laser ablation. Tunnel magnetoresistance measurements give 60% at 30 K, to be compared with 13% obtained recently on ~001!-oriented Fe/amorphous-Al2O3 /FeCo tunnel junctions. This difference demonstrates that the spin polarization of tunneling electrons is not directly related to the density of states of the free metal surface Fe~001! in this case but depends on the actual electronic structure of the entire electrode/barrier system.

Domain matched epitaxial growth of Bi1.5Zn1Nb1.5O7 thin films by pulsed laser deposition

Bi1.5Zn1Nb1.5O7 (BZN) epitaxial thin films were grown by pulsed laser deposition on Al2O3 with a double ZnO buffer layer through domain matching epitaxy (DME) mechanism. The pole figure analysis and reciprocal space mapping revealed the single crystalline nature of the thin film. The pole figure analysis also shows a 60º twinning for the (222) oriented crystals. Sharp intense spots in the SAED pattern also indicate the high crystalline nature of BZN thin film. The Fourier filtered HRTEM images of the BZN-ZnO interface confirms the domain matched epitaxy of BZN with ZnO buffer. An electric field dependent dielectric tunability of 68% was obtained for the BZN thin films with inter digital capacitors patterned over the film.

Effects of the epitaxial layer thickness on the noise properties of Schottky barrier diodes

An analytical theory to describe the combined effects of the epitaxial layer thickness and the ohmic contact on the noise properties of Schottky barrier diodes is presented. The theory, which provides information on both the local and the global noise properties, takes into account the finite size of the epitaxial layer and the effects of the back ohmic contact, and applies to the whole range of applied bias. It is shown that by scaling down the epitaxial layer thickness, the current regime in which the noise temperature displays a shot-noise-like behavior increases at the cost of reducing the current range in which the thermal-noise-like behavior dominates. This improvement in noise temperature is limited by the effects of the ohmic contact, which appear for large currents. The theory is formulated on general trends, allowing its application to the noise analysis of other semiconductor devices operating under strongly inhomogeneous distributions of the electric field and charge concentrations.

Effects of the epitaxial layer thickness on the noise properties of Schottky barrier diodes

An analytical theory to describe the combined effects of the epitaxial layer thickness and the ohmic contact on the noise properties of Schottky barrier diodes is presented. The theory, which provides information on both the local and the global noise properties, takes into account the finite size of the epitaxial layer and the effects of the back ohmic contact, and applies to the whole range of applied bias. It is shown that by scaling down the epitaxial layer thickness, the current regime in which the noise temperature displays a shot-noise-like behavior increases at the cost of reducing the current range in which the thermal-noise-like behavior dominates. This improvement in noise temperature is limited by the effects of the ohmic contact, which appear for large currents. The theory is formulated on general trends, allowing its application to the noise analysis of other semiconductor devices operating under strongly inhomogeneous distributions of the electric field and charge concentrations.

Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers

The origin of the microscopic inhomogeneities in InxGa1-xAs layers grown on GaAs by molecular beam epitaxy is analyzed through the optical absorption spectra near the band gap. It is seen that, for relaxed thick layers of about 2.8μm, composition inhomogeneities are responsible for the band edge smoothing into the whole compositional range (0.05

Simulations of parasitic and intrinsic capacitances related to Multiple-Gate-Field-Effect Transistor architectures

Report for the scientific sojourn carried out at the Université Catholique de Louvain, Belgium, from March until June 2007. In the first part, the impact of important geometrical parameters such as source and drain thickness, fin spacing, spacer width, etc. on the parasitic fringing capacitance component of multiple-gate field-effect transistors (MuGFET) is deeply analyzed using finite element simulations. Several architectures such as single gate, FinFETs (double gate), triple-gate represented by Pi-gate MOSFETs are simulated and compared in terms of channel and fringing capacitances for the same occupied die area. Simulations highlight the great impact of diminishing the spacing between fins for MuGFETs and the trade-off between the reduction of parasitic source and drain resistances and the increase of fringing capacitances when Selective Epitaxial Growth (SEG) technology is introduced. The impact of these technological solutions on the transistor cut-off frequencies is also discussed. The second part deals with the study of the effect of the volume inversion (VI) on the capacitances of undoped Double-Gate (DG) MOSFETs. For that purpose, we present simulation results for the capacitances of undoped DG MOSFETs using an explicit and analytical compact model. It monstrates that the transition from volume inversion regime to dual gate behaviour is well simulated. The model shows an accurate dependence on the silicon layer thickness,consistent withtwo dimensional numerical simulations, for both thin and thick silicon films. Whereas the current drive and transconductance are enhanced in volume inversion regime, our results show thatintrinsic capacitances present higher values as well, which may limit the high speed (delay time) behaviour of DG MOSFETs under volume inversion regime.

Efecte de l'estrès estructual sobre l'emissió estimulada (laseig) en capes epitaxials de KY0.8Yb0.2(WO4)2 i KLu0.8Yb0.2(WO4)2 crescudes sobre substractes de KY(WO4)2 i KLu(WO4)2

Projecte de recerca elaborat a partir d’una estada a la State University of New York a Stony Brook, EEUU, a l’agost i setembre del 2008. S’ha demostrat com està relacionada la diferència en el rendiment de lasejat de dos mostres altament dopades amb iterbi (20 at. %) de capes epitaxials de KY(WO4)2 (KYW) dopat amb Yb crescut sobre un substrat de KYW i de KLu(WO4)2 (KLuW) dopat amb Yb crescut sobre un substrat de KLuW, respectivament, amb la presència de estrès estructural en les capes epitaxials, investigat per Topografia de Feix Blanc de Raig X de Sincrotró. A partir dels resultats obtinguts, queda clar que les mostres que mostren una quantitat d'estrés estructural més gran, les epitaxies de KYW dopat amb Yb crescudes sobre substrats de KYW, duen a una eficiència més petita durant el lasejat, permetent establir una correlació directa entre l'existència i la magnitud d'aquest estrès estructural i la pèrdua del rendiment làser en aquestes capes epitaxial, que per altra banda, des del punt de vista espectroscòpic són equivalents.

Estudi per calorimetria del recuit i la recristal·lització de coure trefilat

A la indústria de trefilatge de coure, el fil elèctric es fabrica per deformació en fred d'un alambró de secció considerable (uns 5 mm de diametre). Per tal d'aconseguir calibres inferiors al mm són necessaris multiples passos per sengles fileres on el gruix es redueix progressivament. La deformació plàstica en fred comporta una reducció de la ductilitat de tal manera que mes enllà d'una determinada reducció de secció el fil es trencaria. Per això, és necessari un recuit tèrmic amb el qual es recupera la ductilitat inicial. El procés microscòpic principal que explica el canvi de ductilitat és la recristal•lització de l'estructura deformada. L'optimització del procés requereix controlar la temperatura i la durada del recuit. Una tècnica que permet monitoritzar la recristal•lització és la calorimetria, ja que durant el recuit es desprèn calor. Per tant, l'estudi es proposa col laborar en l'optimització del procés amb la predicció de temperatures de recuit per a temps molt curts i per a temps molt llargs. L'estudi s'inicia amb mostres de fil de coure deformat a tracció. Aquestes mostres es recouen a diverses velocitats d'escalfament (des de 10 K/min fins a 80 K/min) per tal d'obtenir els paràmetres cinètics necessaris per a la predicci6 dels recuits isoterms. Aquests paràmetres corresponen a la cinètica de JMAK. Els resultats de la primera sèrie d'experiments s6n esperancadors, però es creu que la mostra comercial no es troba suficientment recuita abans de sotmetre-la a deformació

Síntesi i propietats de vidres metàl•lics massissos i materials nanocomposites basats en Fe per aplicacions com a materials magnètics tous

Estudi realitzat a partir d’una estada a l’ Institut für Komplexe Materialien, Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden, entre 2010 i 2011. S'ha explorat l'efecte de les condicions i influència dels elements d'aleació en la capacitat de formació de vidre, l'estructura i les propietats tèrmiques i magnètiques de vidres metàl•lics massissos i materials nanocristal•lins en base Fe. La producció d'aquests materials en forma de cintes de unes 20 micres de gruix ha estat àmpliament estudiada i s'ha vist que presenten unes propietats excel•lents com a materials magnètics tous. El propòsit general d'aquest projecte era l'obtenció de composicions òptimes amb alta capacitat de formar vidre i amb excel•lents propietats magnètiques com a materials magnètics tous combinat amb bones propietats mecàniques. El projecte prenia com a punt de partida l'aliatge [FeCoBSi]96Nb4 ja que és el que presenta millor capacitat de formar vidre i presenta una alta imantació de saturació i baix camp coercitiu. S'ha fet un estudi dels factors fonamentals que intervenen en la formació de l'estat vitri. La composició abans esmentada ha estat variada amb l'addició d'altres elements per estudiar com afecten aquests nous elements a les propietats, la formació de vidre i l'estructura dels aliatges resultants amb l'objectiu de millorar-ne les propietats magnètiques i la capacitat de formació de vidre. Entre altres s'ha usat el Zr, Mo, Y i el Gd per millorar la formació de vidre; i el Co i el Ni per millorar les propietats magnètiques a alta temperatura. S'han estudiat les relacions entre la capacitat de formació de vidre i la seva estabilitat tèrmica, la resistència a la cristal•lització i la estructura de l'aliatge resultant després del procés de solidificació. Per aquest estudi s'han determinat els mecanismes que controlen la transformació i la seva cinètica així com les fases que es formen durant el tractament tèrmic permetent la formulació de models predictius.

Judges' cognition and market order

We argue that during the crystallization of common and civil law in the 19th century, the optimal degree of discretion in judicial rulemaking, albeit influenced by the comparative advantages of both legislative and judicial rulemaking, was mainly determined by the anti-market biases of the judiciary. The different degrees of judicial discretion adopted in both legal traditions were thus optimally adapted to different circumstances, mainly rooted in the unique, market-friendly, evolutionary transition enjoyed by English common law as opposed to the revolutionary environment of the civil law. On the Continent, constraining judicial discretion was essential for enforcing freedom of contract and establishing a market economy. The ongoing debasement of pro-market fundamentals in both branches of the Western legal system is explained from this perspective as a consequence of increased perceptions of exogenous risks and changes in the political system, which favored the adoption of sharing solutions and removed the cognitive advantage of parliaments and political leaders.

Desarrollo de materiales nanocristalinos de base hierro por aleado mecánico

Two alloys, Fe80Nb10B10 and Fe70Ni14Zr6B10, were produced by mechanical alloying. The formation of thenanocrystallites (about 7-8 nm at 80h MA) was detected by X-ray diffraction. After milling for 80 h, differentialscanning calorimetry scans show low-temperature recovery processes and several crystallization processes related with crystal growth and reordering of crystalline phases. The apparent activation energy values are 315 ± 40 kJ mol–1 for alloy A, and 295 ± 20 kJ mol–1 and 320 ± 25 kJ mol–1 for alloy B. Furthermore, a melt-spun Fe-based ribbon was mechanically alloyed to obtain a powdered-like alloy. The increase of the rotation speed and the ball-to-powderweight ratio reduces the necessary time to obtain the powdered form

Screen printed La2/3Sr1/3MnO3 thick films on alumina substrates

We report here on the preparation of La2/3Sr1/3MnO3 magnetoresistive thick films on polycrystalline Al2O3 substrates by using the screen printing technique. It is shown that films can be obtained using high temperature sintering. While there is a reacted layer, this improves adhesion and is not too troublesome if the films are made thick enough. It is shown that PbO-B2O3-SiO2 glass additives allow sintering at lower temperatures and can be used to improve the mechanical stress of the films. However, it is found that glass concentrations large enough to significantly improve the film adherence result in a weak low field magnetoresistance probably because grains are coated with high resistivity material. Strategies to overcome these difficulties are discussed.

Nanocrystalline M-type hexaferrite powders: preparation, geometric and magnetic propertiess

Co-Ti-Sn-Ge substituted M-type bariumhexaferrite powders with mean grain sizes between about 10 nm and about 1 ¿m and a narrow size distribution were prepared reproducibly by means of a modified glass crystallization method. At annealing temperatures between 560 and 580°C of the amorphous flakes nanocrystalline particles grow. They behave superparamagnetically at room temperature and change into stable magnetic single domains at lower temperatures. The magnetic volume of the powders is considerably less than the geometric one. However, the effective anisotropy fields are larger by a Factor of two to three.

Coverage effects on the magnetism of Fe/MgO(001) ultrathin films

Different aspects of the structure-magnetism and morphology-magnetism correlation in the ultrathin limit are studied in epitaxial Fe films grown on MgO(001). In the initial stages of growth the presence of substrate steps, intrinsically higher than an Fe atomic layer, prevent the connection between Fe islands and hence the formation of large volume magnetic regions. This is proposed as an explanation to the superparamagnetic nature of ultrathin Fe films grown on MgO in addition to the usually considered islanded, or Vollmer-Weber, growth. Using this model, we explain the observed transition from superparamagnetism to ferromagnetism for Fe coverages above 3 monolayers (ML). However, even though ferromagnetism and magnetocrystalline anisotropy are observed for 4 ML, complete coverage of the MgO substrate by the Fe ultrathin films only occurs around 6 ML as determined by polar Kerr spectra and simulations that consider different coverage situations. In annealed 3.5 ML Fe films, shape or configurational anisotropy dominates the intrinsic magnetocrystalline anisotropy, due to an annealing induced continuous to islanded morphological transition. A small interface anisotropy in thicker films is observed, probably due to dislocations observed at the Fe¿MgO(001) interface.

Effects of prior hydrogenation on the structure and properties of thermally nanocrystallized silicon layers

Nanocrystalline silicon layers have been obtained by thermal annealing of films sputtered in various hydrogen partial pressures. The as-deposited and crystallized films were investigated by infrared, Raman, x-ray diffraction, electron microscopy, and optical absorption techniques. The obtained data show evidence of a close correlation between the microstructure and properties of the processed material, and the hydrogen content in the as-grown deposit. The minimum stress deduced from Raman was found to correspond to the widest band gap and to a maximum hydrogen content in the basic unannealed sample. Such a structure relaxation seems to originate from the so-called "chemical annealing" thought to be due to Si-H2 species, as identified by infrared spectroscopy. The variation of the band gap has been interpreted in terms of the changes in the band tails associated with the disorder which would be induced by stress. Finally, the layers originally deposited with the highest hydrogen pressure show a lowest stress-which does not correlate with the hydrogen content and the optical band gap¿and some texturing. These features are likely related to the presence in these layers of a significant crystalline fraction already before annealing.