Large Magnetoresistance in Fe/MgO/FeCo(001) Epitaxial Tunnel-Junctions on GaAs(001).


Autoria(s): Bowen, M.; Cros, V.; Petroff, F.; Fert, Albert, 1938-; Martínez Boubeta, José Carlos; Costa Krämer, José Luis; Anguita, José Virgilio; Cebollada, Alfonso; Briones Fernández-Pola, Fernando; Teresa, J. M. de; Morellon, L.; Ibarra, M. R.; Güell Vilà, Frank; Peiró Martínez, Francisca; Cornet i Calveras, Albert
Contribuinte(s)

Universitat de Barcelona

Resumo

We present tunneling experiments on Fe~001!/MgO~20 Å!/FeCo~001! single-crystal epitaxial junctions of high quality grown by sputtering and laser ablation. Tunnel magnetoresistance measurements give 60% at 30 K, to be compared with 13% obtained recently on ~001!-oriented Fe/amorphous-Al2O3 /FeCo tunnel junctions. This difference demonstrates that the spin polarization of tunneling electrons is not directly related to the density of states of the free metal surface Fe~001! in this case but depends on the actual electronic structure of the entire electrode/barrier system.

Identificador

http://hdl.handle.net/2445/33761

Idioma(s)

eng

Publicador

American Institute of Physics

Direitos

(c) American Institute of Physics , 2001

info:eu-repo/semantics/openAccess

Palavras-Chave #Magnetoresistència #Dispositius de memòria d'ordinador #Microelectrònica #Efecte túnel #Ferro #Magnetoresistance #Computer storage devices #Microelectronics #Tunneling (Physics) #Iron
Tipo

info:eu-repo/semantics/article

info:eu-repo/semantics/publishedVersion