Large Magnetoresistance in Fe/MgO/FeCo(001) Epitaxial Tunnel-Junctions on GaAs(001).
| Contribuinte(s) |
Universitat de Barcelona |
|---|---|
| Resumo |
We present tunneling experiments on Fe~001!/MgO~20 Å!/FeCo~001! single-crystal epitaxial junctions of high quality grown by sputtering and laser ablation. Tunnel magnetoresistance measurements give 60% at 30 K, to be compared with 13% obtained recently on ~001!-oriented Fe/amorphous-Al2O3 /FeCo tunnel junctions. This difference demonstrates that the spin polarization of tunneling electrons is not directly related to the density of states of the free metal surface Fe~001! in this case but depends on the actual electronic structure of the entire electrode/barrier system. |
| Identificador | |
| Idioma(s) |
eng |
| Publicador |
American Institute of Physics |
| Direitos |
(c) American Institute of Physics , 2001 info:eu-repo/semantics/openAccess |
| Palavras-Chave | #Magnetoresistència #Dispositius de memòria d'ordinador #Microelectrònica #Efecte túnel #Ferro #Magnetoresistance #Computer storage devices #Microelectronics #Tunneling (Physics) #Iron |
| Tipo |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion |